| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Book review
|
|
|
1998
|
38 |
10 |
p. 1645-
1 p.
|
artikel
|
| 2 |
Building in reliability with latch-up, ESD and hot carrier effects on 0.25 μm CMOS technology
|
Leroux, C
|
|
1998
|
38 |
10 |
p. 1547-1552
6 p.
|
artikel
|
| 3 |
Experimental characterization of the continuous switching regime in floating-body PD SOI MOSFETs
|
Perron, L.M
|
|
1998
|
38 |
10 |
p. 1553-1559
7 p.
|
artikel
|
| 4 |
Genetic algorithms for reliability design problems
|
Hsieh, Yi-Chih
|
|
1998
|
38 |
10 |
p. 1599-1605
7 p.
|
artikel
|
| 5 |
Impact of geometrical scaling on parasitic pnp bipolar transistor in N-well, 0.25 μm CMOS devices and its effect on latchup immunity
|
Leong, Kam-Chew
|
|
1998
|
38 |
10 |
p. 1621-1626
6 p.
|
artikel
|
| 6 |
Influence of thermal heating effect on pulsed DC electromigration result analysis
|
Waltz, P
|
|
1998
|
38 |
10 |
p. 1531-1537
7 p.
|
artikel
|
| 7 |
Low-frequency noise in thick-film structures caused by traps in glass barriers
|
Mrak, I.
|
|
1998
|
38 |
10 |
p. 1569-1576
8 p.
|
artikel
|
| 8 |
Off-state gate current with quasi-zero temperature coefficient in n-MOSFETs with reoxidized nitrided oxide as gate dielectric
|
Lai, P.T
|
|
1998
|
38 |
10 |
p. 1585-1589
5 p.
|
artikel
|
| 9 |
Optimal burn-in for minimizing cost and multiobjectives
|
Kim, K.N.
|
|
1998
|
38 |
10 |
p. 1577-1583
7 p.
|
artikel
|
| 10 |
Reliability assessment of a plastic encapsulated RF switching device
|
Mahajan, R.
|
|
1998
|
38 |
10 |
p. 1607-1610
4 p.
|
artikel
|
| 11 |
RTS noise due to lateral isolation related defects in submicron nMOSFETs
|
Lukyanchikova, N.
|
|
1998
|
38 |
10 |
p. 1561-1568
8 p.
|
artikel
|
| 12 |
Solder joint reliability of a low cost chip size package—NuCSP
|
Lau, J.H
|
|
1998
|
38 |
10 |
p. 1519-1529
11 p.
|
artikel
|
| 13 |
Stochastic analysis of a two-unit warm standby system with slow switch subject to hardware and human error failures
|
Mahmoud, M.A.W.
|
|
1998
|
38 |
10 |
p. 1639-1644
6 p.
|
artikel
|
| 14 |
Strain relaxation in SiGe due to process induced defects and their subsequent annealing behavior
|
Misra, D.
|
|
1998
|
38 |
10 |
p. 1611-1619
9 p.
|
artikel
|
| 15 |
The degradation of GaAlAs red light-emitting diodes under continuous and low-speed pulse operations
|
Yanagisawa, T.
|
|
1998
|
38 |
10 |
p. 1627-1630
4 p.
|
artikel
|
| 16 |
Thermomechanical effects in metal lines on integrated circuits analysed with a differential polarimetric interferometer
|
Dilhaire, S.
|
|
1998
|
38 |
10 |
p. 1591-1597
7 p.
|
artikel
|
| 17 |
The use of impedance spectroscopy, SEM and SAM imaging for early detection of failure in SMT assemblies
|
Ousten, Y.
|
|
1998
|
38 |
10 |
p. 1539-1545
7 p.
|
artikel
|
| 18 |
Two-polarity pulse noise in reverse biased degraded p–n junctions
|
Jevtić, M.M.
|
|
1998
|
38 |
10 |
p. 1631-1637
7 p.
|
artikel
|
Tijdschrift beschrijving