| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A low-frequency noise study of hot-carrier stressing effects in submicron Si p-MOSFETs
|
Vasina, P
|
|
1998
|
38 |
1 |
p. 23-27
5 p.
|
artikel
|
| 2 |
A study of the influence of inter-metal dielectrics on electromigration performance
|
Foley, Sean
|
|
1998
|
38 |
1 |
p. 107-113
7 p.
|
artikel
|
| 3 |
Change in d.c. and 1/f noise characteristics of n-submicron MOSFETs due to hot-carrier degradation
|
Vandamme, L.K.J.
|
|
1998
|
38 |
1 |
p. 29-35
7 p.
|
artikel
|
| 4 |
Component level ESD testing
|
Verhaege, Koen
|
|
1998
|
38 |
1 |
p. 115-128
14 p.
|
artikel
|
| 5 |
Degradation mechanism of GaAs MESFETs
|
Mun, Jae Kyoung
|
|
1998
|
38 |
1 |
p. 171-178
8 p.
|
artikel
|
| 6 |
Dielectric Reliability Measurement Methods: A Review
|
Martin, Andreas
|
|
1998
|
38 |
1 |
p. 37-72
36 p.
|
artikel
|
| 7 |
Editorial
|
|
|
1998
|
38 |
1 |
p. iii-
1 p.
|
artikel
|
| 8 |
Gate oxide leakage due to temperature accelerated degradation under plasma charging conditions
|
Brożek, Tomasz
|
|
1998
|
38 |
1 |
p. 73-79
7 p.
|
artikel
|
| 9 |
Hot-carrier injections in SiO2
|
Vuillaume, D
|
|
1998
|
38 |
1 |
p. 7-22
16 p.
|
artikel
|
| 10 |
Linewidth control effects on MOSFET ESD robustness
|
Voldman, S
|
|
1998
|
38 |
1 |
p. 145-152
8 p.
|
artikel
|
| 11 |
Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs
|
Sheu, S
|
|
1998
|
38 |
1 |
p. 163-170
8 p.
|
artikel
|
| 12 |
Reliability of III–V based heterojunction bipolar transistors
|
Christianson, K.A
|
|
1998
|
38 |
1 |
p. 153-161
9 p.
|
artikel
|
| 13 |
Reliability phenomena under AC stress
|
Hu, Chenming
|
|
1998
|
38 |
1 |
p. 1-5
5 p.
|
artikel
|
| 14 |
The influence of addition elements on the early resistance changes observed during electromigration testing of Al metal lines
|
De Ceuninck, W.A
|
|
1998
|
38 |
1 |
p. 87-98
12 p.
|
artikel
|
| 15 |
The modeling of resistance changes in the early phase of electromigration
|
Mouthaan, Ton J
|
|
1998
|
38 |
1 |
p. 99-105
7 p.
|
artikel
|
| 16 |
Ultrathin RTP oxynitride dielectrics on planar, trench and three dimensional structures
|
Nguyen, Son V.
|
|
1998
|
38 |
1 |
p. 81-85
5 p.
|
artikel
|
| 17 |
Using charged device model testing to eliminate real-world ESD failures
|
Olney, Andrew H.
|
|
1998
|
38 |
1 |
p. 129-143
15 p.
|
artikel
|
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