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                             177 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerated testing of time related parameters in MNOS memories 1982
22 4 p. 899-
1 p.
artikel
2 A microelectronics technical dictionary 1982
22 4 p. 902-
1 p.
artikel
3 A modern maintainability prediction technique 1982
22 4 p. 900-
1 p.
artikel
4 An air-firing base metal resistor and conductor system for low cost thick film circuit manufacture 1982
22 4 p. 907-908
2 p.
artikel
5 An evaluation of plastic coatings for high reliability microcircuits 1982
22 4 p. 895-
1 p.
artikel
6 An experimental and theoretical study of polycrystalline thin film transistor 1982
22 4 p. 909-
1 p.
artikel
7 Anisotropy control in dry etching 1982
22 4 p. 902-
1 p.
artikel
8 A note on a lifetime model 1982
22 4 p. 900-
1 p.
artikel
9 A note on IC-yield statistics 1982
22 4 p. 895-
1 p.
artikel
10 Application of hybrid IC's to the automotive electronics market in Europe 1982
22 4 p. 909-
1 p.
artikel
11 Application of step stress to time dependent breakdown 1982
22 4 p. 899-
1 p.
artikel
12 A redundant system with non-instantaneous switchover over “preparation time” for the repair facility 1982
22 4 p. 899-
1 p.
artikel
13 Arsenic spin-on source for deep junction formation 1982
22 4 p. 906-
1 p.
artikel
14 A study of masking properties of SiO2 and photoresists with boron ion implantation 1982
22 4 p. 911-
1 p.
artikel
15 A survey of optimization techniques for integrated-circuit design 1982
22 4 p. 902-
1 p.
artikel
16 A technique for optimal sequential maintenance scheduling 1982
22 4 p. 901-
1 p.
artikel
17 A two-dissimilar-unit cold standby system with allowed down time Ramamurthy, K.G.
1982
22 4 p. 689-691
3 p.
artikel
18 Automated in-line puddle development of positive photoresists 1982
22 4 p. 903-
1 p.
artikel
19 Automatic production system for circuit boards with universal hybrid integrated circuits 1982
22 4 p. 909-
1 p.
artikel
20 Automating test generation closes the design loop 1982
22 4 p. 903-
1 p.
artikel
21 Availability analysis of a N modules parallel system with common memory, central controller and distributed software Lombardi, Fabrizio
1982
22 4 p. 887-894
8 p.
artikel
22 Availability of a complex system having shelf-life of the components and common-cause failures Govil, A.K.
1982
22 4 p. 685-688
4 p.
artikel
23 Board testing meets the challenges of ECL 1982
22 4 p. 902-
1 p.
artikel
24 BS9000 components and reliability quality factors: suggested use of MIL-HDBK-217C factors based on a comparative product assurance analysis 1982
22 4 p. 895-
1 p.
artikel
25 Bulk charge effects in VLSI MOSFETs 1982
22 4 p. 902-
1 p.
artikel
26 Bulk charge effects in VLSI MOSFETs 1982
22 4 p. 902-
1 p.
artikel
27 CAD tools must change to meet the needs of VLSI 1982
22 4 p. 902-
1 p.
artikel
28 CF4/O2 plasma accelerated aluminum metallization corrosion in plastic encapsulated ICs in the presence of contaminated die attach epoxies 1982
22 4 p. 897-
1 p.
artikel
29 Characterization of thick-film compositions on RCA porcelain-coated steel substrates 1982
22 4 p. 908-
1 p.
artikel
30 Chip resistors gain support 1982
22 4 p. 910-
1 p.
artikel
31 Chip trio simplifies precise position control 1982
22 4 p. 905-
1 p.
artikel
32 C-MOS PROM density hits 16-K 1982
22 4 p. 905-
1 p.
artikel
33 Comments on ‘Thin film metallization studies and device lifetime prediction using Al-Si and Al-Cu-Si conductor test bars’ Danso, K.A.
1982
22 4 p. 837-840
4 p.
artikel
34 Comparison of new technologies for VLSI: possibilities and limitations 1982
22 4 p. 902-
1 p.
artikel
35 Computer-aided design of VLSI circuits 1982
22 4 p. 904-
1 p.
artikel
36 Condensation thermography—a novel approach for locating short circuits and determining surface temperatures in semi-conductor die 1982
22 4 p. 897-
1 p.
artikel
37 Controller chip handles voice and data switching 1982
22 4 p. 903-
1 p.
artikel
38 Cost—benefit analysis of a one-server two-unit cold standby system subject to inspection Gopalan, M.N.
1982
22 4 p. 699-705
7 p.
artikel
39 Current transport in an ion-implanted diode 1982
22 4 p. 910-911
2 p.
artikel
40 Current trends in silicon research 1982
22 4 p. 901-902
2 p.
artikel
41 DC conduction mechanisms in thin polyimide films 1982
22 4 p. 906-
1 p.
artikel
42 Deep centers introduced by argon ion bombardment in n-type silicon 1982
22 4 p. 907-
1 p.
artikel
43 Degradation mechanism for silicon p +-n junctions under forward bias 1982
22 4 p. 907-
1 p.
artikel
44 Delay times in fault tree analysis Becker, Axel
1982
22 4 p. 819-836
18 p.
artikel
45 Designing the CF-18 to be operationally ready Dighton, Robert D.
1982
22 4 p. 657-670
14 p.
artikel
46 Determination of valley splitting in (100) Si inversion layers 1982
22 4 p. 906-
1 p.
artikel
47 Digital communication devices 1982
22 4 p. 905-
1 p.
artikel
48 Digital generation of data modulated waveforms Bozic, S.M.
1982
22 4 p. 759-767
9 p.
artikel
49 Digital VLSI breeds next-generation TV receivers 1982
22 4 p. 901-
1 p.
artikel
50 Dynamic measurement of the water vapor content of integrated circuit packages using derivative infrared diode laser spectroscopy 1982
22 4 p. 898-
1 p.
artikel
51 Dynamics of charge collection from alpha-particle tracks in integrated circuits 1982
22 4 p. 905-
1 p.
artikel
52 Effect of boron-doping on the hydrogen evolution from a-Si: H films 1982
22 4 p. 907-
1 p.
artikel
53 Electrical characterization of crystal defects and oxygen in Czochralski silicon using a gate-controlled diode 1982
22 4 p. 907-
1 p.
artikel
54 Electric measurement and modelling of the emitter base junction behaviour of VLSI silicon transistor 1982
22 4 p. 903-
1 p.
artikel
55 Electron-beam projector suits up for submicrometer race 1982
22 4 p. 911-
1 p.
artikel
56 Electron beam writes next-generation IC patterns 1982
22 4 p. 911-
1 p.
artikel
57 Electronic structure of SiO2 (111) thin film 1982
22 4 p. 905-
1 p.
artikel
58 Electron microscopy and failure analysis 1982
22 4 p. 899-
1 p.
artikel
59 Electrostatic discharge failures of semiconductor devices 1982
22 4 p. 896-
1 p.
artikel
60 Electro-thermomigration in NMOS LSI devices 1982
22 4 p. 897-
1 p.
artikel
61 Energy levels and degeneracy ratios for chromium in silicon 1982
22 4 p. 907-
1 p.
artikel
62 Etching SiO2 in a reactive ion beam 1982
22 4 p. 911-
1 p.
artikel
63 Evaporated thin film RC filters 1982
22 4 p. 910-
1 p.
artikel
64 Experience pratique de deverminage de composants electroniques Berger, M.C.
1982
22 4 p. 671-680
10 p.
artikel
65 Experimental and mathematical determination of mechanical strains within plastic IC packages and their effect on devices during environmental tests 1982
22 4 p. 898-
1 p.
artikel
66 Experimental tests for Boson condensation and superconductivity in semiconductors during pulsed beam annealing 1982
22 4 p. 910-
1 p.
artikel
67 Fabrication of large-area thick-film hybrid circuits on RCA porcelain-coated steel substrates 1982
22 4 p. 909-
1 p.
artikel
68 Fabrication of nonreciprocal microwave components using thick film ferrimagnetic pastes 1982
22 4 p. 908-
1 p.
artikel
69 Fail-safe computer grows modularly 1982
22 4 p. 899-
1 p.
artikel
70 Failure modes in GaAs power FETs: Ohmic contact electromigration and formation of refractory oxides 1982
22 4 p. 897-
1 p.
artikel
71 Fast electron-beam lithography 1982
22 4 p. 910-
1 p.
artikel
72 Forefront of research on resists 1982
22 4 p. 903-
1 p.
artikel
73 Functional laser trimming of automotive electronics 1982
22 4 p. 910-
1 p.
artikel
74 Gettering processes for defect control 1982
22 4 p. 896-
1 p.
artikel
75 High-frequency thin-film transistor operates at 200°C 1982
22 4 p. 909-
1 p.
artikel
76 High speed SOS and GaAs IC testing in the 1980s 1982
22 4 p. 906-907
2 p.
artikel
77 How parts fail 1982
22 4 p. 896-
1 p.
artikel
78 Humidity activated surface leakage paths on T.O. case style glass headers 1982
22 4 p. 898-
1 p.
artikel
79 Humidity test of premolded chip carriers 1982
22 4 p. 903-
1 p.
artikel
80 Hybrid lithography 1982
22 4 p. 903-
1 p.
artikel
81 Implanted p-channel MOS transistor threshold voltage dependence on impurity segregation during oxidation 1982
22 4 p. 910-
1 p.
artikel
82 Improved atmospheric-pressure chemical-vapor-deposition system for depositing silica and phosphosilicate glass thin films 1982
22 4 p. 907-
1 p.
artikel
83 Infrared firing of thick film compositions 1982
22 4 p. 908-
1 p.
artikel
84 Integrated optics: a tutorial review 1982
22 4 p. 901-
1 p.
artikel
85 Internal gettering in silicon 1982
22 4 p. 906-
1 p.
artikel
86 Ion beam lithography 1982
22 4 p. 911-
1 p.
artikel
87 Ion implantation gettering; a fundamental approach 1982
22 4 p. 910-
1 p.
artikel
88 Iron-related deep levels in silicon 1982
22 4 p. 906-
1 p.
artikel
89 Laser and electron beam scanning of GaAs FETS Edwards, W.D.
1982
22 4 p. 735-746
12 p.
artikel
90 Latent B-radiation damage in hermetically sealed NMOS devices 1982
22 4 p. 897-
1 p.
artikel
91 Logic analyzer delivers test patterns, too 1982
22 4 p. 905-
1 p.
artikel
92 Logic simulation of MOS circuits based on information obtained from their masks 1982
22 4 p. 902-903
2 p.
artikel
93 Low-value nickel resistors electroless-plated on “IMST” substrate for power hybrid ICs 1982
22 4 p. 908-
1 p.
artikel
94 Maintainability applications using the matrix FMEA technique 1982
22 4 p. 899-
1 p.
artikel
95 Maintenance techniques in distributed communications switching systems 1982
22 4 p. 900-901
2 p.
artikel
96 Manufacturing high-density memory chips 1982
22 4 p. 903-
1 p.
artikel
97 Memory retention life at various environmental and life tests 1982
22 4 p. 900-
1 p.
artikel
98 Memory-window-size-temperature dependence of the metal-nitride-oxide-silicon (MNOS) structure 1982
22 4 p. 907-
1 p.
artikel
99 Methods of synthesizing active filters with hybrid integrated circuits of the Tesla WQU 011 type 1982
22 4 p. 910-
1 p.
artikel
100 Microcomputer real time software reliability and fault recovery Lombardi, Fabrizio
1982
22 4 p. 693-697
5 p.
artikel
101 Microelectronic test chips in integrated circuit manufacturing 1982
22 4 p. 904-
1 p.
artikel
102 Migration of silver from silver-loaded polyimide adhesive chip bonds at high temperatures 1982
22 4 p. 896-
1 p.
artikel
103 Model of impurity diffusion from an oxide source into silicon 1982
22 4 p. 906-
1 p.
artikel
104 Monolithic integrated Hall devices in silicon circuits 1982
22 4 p. 904-905
2 p.
artikel
105 Monte Carlo calculations based on the generalized electro-migration failure model 1982
22 4 p. 905-
1 p.
artikel
106 Multi-layer 2 MIL line technology 1982
22 4 p. 902-
1 p.
artikel
107 Multilayer resist systems for lithography 1982
22 4 p. 904-
1 p.
artikel
108 Multi-MOS structure speeds layout of VLSI chips 1982
22 4 p. 903-
1 p.
artikel
109 Multiuser IC cell library buys custom densities at gate-array prices 1982
22 4 p. 902-
1 p.
artikel
110 New concepts in early failure modelling Govil, K.K.
1982
22 4 p. 709-710
2 p.
artikel
111 New quantitative measurements of IC stress introduced by plastic packages 1982
22 4 p. 898-
1 p.
artikel
112 New thick film functional devices 1982
22 4 p. 908-
1 p.
artikel
113 NMOS voltage breakdown characteristics compared with accelerated life tests and field use data 1982
22 4 p. 900-
1 p.
artikel
114 On creating a reliable programming environment Soi, Inder M.
1982
22 4 p. 711-716
6 p.
artikel
115 On issues in fault-tolerant computer design 1982
22 4 p. 898-
1 p.
artikel
116 Optimization of access points for automatic test program generation and fault location in large analogue circuits and systems 1982
22 4 p. 899-900
2 p.
artikel
117 Optimization of RCA porcelain for compatibility with thick films 1982
22 4 p. 909-
1 p.
artikel
118 Overlooking the obvious 1982
22 4 p. 895-
1 p.
artikel
119 Packaging trade-offs for an LSI-oriented very high-speed computer, the HITAC M-200H 1982
22 4 p. 904-
1 p.
artikel
120 Phase dependent voltage contrast—an inexpensive SEM addition for LSI failure analysis 1982
22 4 p. 899-
1 p.
artikel
121 Precision crosssectional analysis of LSI and VLSI devices 1982
22 4 p. 897-
1 p.
artikel
122 Probability distribution functions for sampling schemes 1982
22 4 p. 898-899
2 p.
artikel
123 Process modeling of integrated circuit device technology 1982
22 4 p. 902-
1 p.
artikel
124 Programmable modules link up easily into custom test systems 1982
22 4 p. 903-
1 p.
artikel
125 Reliability analysis of a container spreader Elsayed, E.A.
1982
22 4 p. 723-734
12 p.
artikel
126 Reliability analysis of a two-unit cold standby redundant system with two operating modes Gupta, S.M.
1982
22 4 p. 747-758
12 p.
artikel
127 Reliability analysis of time-dependent cascade system with deterministic cycle times Gopalan, M.N.
1982
22 4 p. 841-872
32 p.
artikel
128 Reliability aspects of a floating gate E2 prom 1982
22 4 p. 897-898
2 p.
artikel
129 Reliability evaluation of a TMR computer system with multivariate exponential failures and a general repair Osaki, Shunji
1982
22 4 p. 781-787
7 p.
artikel
130 Reliability of DH Ga1−xAlxAs LEDs for lightwave communications 1982
22 4 p. 896-
1 p.
artikel
131 Reliability of PtSi-Ti/W-Al metallization system used in bipolar logics 1982
22 4 p. 899-
1 p.
artikel
132 Reliability problems in TTL-LS devices 1982
22 4 p. 895-896
2 p.
artikel
133 Reliability study of plastic encapsulated copper lead frame/epoxy die attach packaging system 1982
22 4 p. 896-897
2 p.
artikel
134 Reliability tests and stress in plastic integrated circuits 1982
22 4 p. 897-
1 p.
artikel
135 Remote polar phonon scattering for hot electrons in Si-inversion layers 1982
22 4 p. 906-
1 p.
artikel
136 Resistors screen printed on ceramic-coated steel substrates 1982
22 4 p. 909-
1 p.
artikel
137 Review of reliability improvements of GaAIAs laser diodes Einhorn, Arthur J.
1982
22 4 p. 769-780
12 p.
artikel
138 Scaled-down DIPs catch on for hybrid needs 1982
22 4 p. 901-
1 p.
artikel
139 SEM/EDAX analysis of pind test failures 1982
22 4 p. 896-
1 p.
artikel
140 s-Expected number of repairs and frequency of failures of a n-unit system with a single repair facility 1982
22 4 p. 900-
1 p.
artikel
141 Silicides nudging out polysilicon 1982
22 4 p. 903-
1 p.
artikel
142 Silicon operating system standardizes software 1982
22 4 p. 905-
1 p.
artikel
143 Software implemented fault tolerance: A methodology Lombardi, F.
1982
22 4 p. 873-886
14 p.
artikel
144 Software maintainability—what it means and how to achieve it 1982
22 4 p. 901-
1 p.
artikel
145 Stochastic behaviour of a two-unit redundant system with switchover time 1982
22 4 p. 900-
1 p.
artikel
146 Stochastic behaviour of a two-unit repairable system subject to inspection Gopalan, M.N.
1982
22 4 p. 717-722
6 p.
artikel
147 Temperature dependent defect level for an ionic failure mechanism 1982
22 4 p. 896-
1 p.
artikel
148 Terminal and cooling requirements for LSI packages 1982
22 4 p. 901-
1 p.
artikel
149 Testing of properties for soldered leadless chip carrier assemblies 1982
22 4 p. 904-
1 p.
artikel
150 The design, construction, and evaluation of a porcelainized-steel-substrate hybrid-circuit module 1982
22 4 p. 908-909
2 p.
artikel
151 The effect of oxygen and argon on the interdiffusion of Au-Al thin film couples 1982
22 4 p. 909-
1 p.
artikel
152 The effects of moisture on multilayered ceramic top brazed flat packs 1982
22 4 p. 898-
1 p.
artikel
153 The field effect electron mobility of laser-annealed polycrystalline silicon MOSFETs 1982
22 4 p. 906-
1 p.
artikel
154 The mission profile 1982
22 4 p. 895-
1 p.
artikel
155 The reflow attachment and reliability testing of ceramic chip carriers 1982
22 4 p. 904-
1 p.
artikel
156 The reliability of electronic components. Part 2: the reliability of passive components 1982
22 4 p. 897-
1 p.
artikel
157 The use of 16-bit high level languages and microcomputer products to solve industrial control products 1982
22 4 p. 904-
1 p.
artikel
158 The use of marginal voltage measurements to detect and locate defects in digital microcircuits 1982
22 4 p. 897-
1 p.
artikel
159 The use of silicone RTV rubber for alpha particle protection on silicon integrated circuits 1982
22 4 p. 898-
1 p.
artikel
160 Thick film circuits for telecommunications equipment 1982
22 4 p. 908-
1 p.
artikel
161 Thick-film transformer advances hybrid isolation amplifier 1982
22 4 p. 909-
1 p.
artikel
162 Thin film metallization studies and device lifetime prediction using Al-Si and Al-Cu-Si conductor test bars 1982
22 4 p. 910-
1 p.
artikel
163 Thin film technology used in Bell System telecommunication circuits 1982
22 4 p. 908-
1 p.
artikel
164 Time-shifted rayleigh density for wearout failures Govil, K.K.
1982
22 4 p. 707-708
2 p.
artikel
165 Time-zero dielectric reliability test by a ramp method 1982
22 4 p. 899-
1 p.
artikel
166 Typical applications of ion implanted layer as a diffusion source for MOS and bipolar devices 1982
22 4 p. 910-
1 p.
artikel
167 2-Unit standby system with proviso for rest and maximum rest 1982
22 4 p. 900-
1 p.
artikel
168 Users want easier tests for VLSI 1982
22 4 p. 899-
1 p.
artikel
169 Vacancies in a Si (111) thin film 1982
22 4 p. 906-
1 p.
artikel
170 Vacuum operated mercury probe for CV plotting and profiling 1982
22 4 p. 905-
1 p.
artikel
171 VHSIC proposals take six fast tracks 1982
22 4 p. 901-
1 p.
artikel
172 VLSI tester runs at 50 MHz 1982
22 4 p. 899-
1 p.
artikel
173 VLSI test system reduces total test time 1982
22 4 p. 898-
1 p.
artikel
174 Wafer prepares to turn itself into a computer 1982
22 4 p. 901-
1 p.
artikel
175 Weapons systems analysis, part II: Simulation techniques and models Sherif, Yosef S.
1982
22 4 p. 789-817
29 p.
artikel
176 Weibull parameter estimation Fung, Karen
1982
22 4 p. 681-684
4 p.
artikel
177 X-ray lithography exposure machines 1982
22 4 p. 903-
1 p.
artikel
                             177 gevonden resultaten
 
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