nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accelerated testing of time related parameters in MNOS memories
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
2 |
A microelectronics technical dictionary
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
3 |
A modern maintainability prediction technique
|
|
|
1982 |
22 |
4 |
p. 900- 1 p. |
artikel |
4 |
An air-firing base metal resistor and conductor system for low cost thick film circuit manufacture
|
|
|
1982 |
22 |
4 |
p. 907-908 2 p. |
artikel |
5 |
An evaluation of plastic coatings for high reliability microcircuits
|
|
|
1982 |
22 |
4 |
p. 895- 1 p. |
artikel |
6 |
An experimental and theoretical study of polycrystalline thin film transistor
|
|
|
1982 |
22 |
4 |
p. 909- 1 p. |
artikel |
7 |
Anisotropy control in dry etching
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
8 |
A note on a lifetime model
|
|
|
1982 |
22 |
4 |
p. 900- 1 p. |
artikel |
9 |
A note on IC-yield statistics
|
|
|
1982 |
22 |
4 |
p. 895- 1 p. |
artikel |
10 |
Application of hybrid IC's to the automotive electronics market in Europe
|
|
|
1982 |
22 |
4 |
p. 909- 1 p. |
artikel |
11 |
Application of step stress to time dependent breakdown
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
12 |
A redundant system with non-instantaneous switchover over “preparation time” for the repair facility
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
13 |
Arsenic spin-on source for deep junction formation
|
|
|
1982 |
22 |
4 |
p. 906- 1 p. |
artikel |
14 |
A study of masking properties of SiO2 and photoresists with boron ion implantation
|
|
|
1982 |
22 |
4 |
p. 911- 1 p. |
artikel |
15 |
A survey of optimization techniques for integrated-circuit design
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
16 |
A technique for optimal sequential maintenance scheduling
|
|
|
1982 |
22 |
4 |
p. 901- 1 p. |
artikel |
17 |
A two-dissimilar-unit cold standby system with allowed down time
|
Ramamurthy, K.G. |
|
1982 |
22 |
4 |
p. 689-691 3 p. |
artikel |
18 |
Automated in-line puddle development of positive photoresists
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
19 |
Automatic production system for circuit boards with universal hybrid integrated circuits
|
|
|
1982 |
22 |
4 |
p. 909- 1 p. |
artikel |
20 |
Automating test generation closes the design loop
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
21 |
Availability analysis of a N modules parallel system with common memory, central controller and distributed software
|
Lombardi, Fabrizio |
|
1982 |
22 |
4 |
p. 887-894 8 p. |
artikel |
22 |
Availability of a complex system having shelf-life of the components and common-cause failures
|
Govil, A.K. |
|
1982 |
22 |
4 |
p. 685-688 4 p. |
artikel |
23 |
Board testing meets the challenges of ECL
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
24 |
BS9000 components and reliability quality factors: suggested use of MIL-HDBK-217C factors based on a comparative product assurance analysis
|
|
|
1982 |
22 |
4 |
p. 895- 1 p. |
artikel |
25 |
Bulk charge effects in VLSI MOSFETs
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
26 |
Bulk charge effects in VLSI MOSFETs
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
27 |
CAD tools must change to meet the needs of VLSI
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
28 |
CF4/O2 plasma accelerated aluminum metallization corrosion in plastic encapsulated ICs in the presence of contaminated die attach epoxies
|
|
|
1982 |
22 |
4 |
p. 897- 1 p. |
artikel |
29 |
Characterization of thick-film compositions on RCA porcelain-coated steel substrates
|
|
|
1982 |
22 |
4 |
p. 908- 1 p. |
artikel |
30 |
Chip resistors gain support
|
|
|
1982 |
22 |
4 |
p. 910- 1 p. |
artikel |
31 |
Chip trio simplifies precise position control
|
|
|
1982 |
22 |
4 |
p. 905- 1 p. |
artikel |
32 |
C-MOS PROM density hits 16-K
|
|
|
1982 |
22 |
4 |
p. 905- 1 p. |
artikel |
33 |
Comments on ‘Thin film metallization studies and device lifetime prediction using Al-Si and Al-Cu-Si conductor test bars’
|
Danso, K.A. |
|
1982 |
22 |
4 |
p. 837-840 4 p. |
artikel |
34 |
Comparison of new technologies for VLSI: possibilities and limitations
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
35 |
Computer-aided design of VLSI circuits
|
|
|
1982 |
22 |
4 |
p. 904- 1 p. |
artikel |
36 |
Condensation thermography—a novel approach for locating short circuits and determining surface temperatures in semi-conductor die
|
|
|
1982 |
22 |
4 |
p. 897- 1 p. |
artikel |
37 |
Controller chip handles voice and data switching
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
38 |
Cost—benefit analysis of a one-server two-unit cold standby system subject to inspection
|
Gopalan, M.N. |
|
1982 |
22 |
4 |
p. 699-705 7 p. |
artikel |
39 |
Current transport in an ion-implanted diode
|
|
|
1982 |
22 |
4 |
p. 910-911 2 p. |
artikel |
40 |
Current trends in silicon research
|
|
|
1982 |
22 |
4 |
p. 901-902 2 p. |
artikel |
41 |
DC conduction mechanisms in thin polyimide films
|
|
|
1982 |
22 |
4 |
p. 906- 1 p. |
artikel |
42 |
Deep centers introduced by argon ion bombardment in n-type silicon
|
|
|
1982 |
22 |
4 |
p. 907- 1 p. |
artikel |
43 |
Degradation mechanism for silicon p +-n junctions under forward bias
|
|
|
1982 |
22 |
4 |
p. 907- 1 p. |
artikel |
44 |
Delay times in fault tree analysis
|
Becker, Axel |
|
1982 |
22 |
4 |
p. 819-836 18 p. |
artikel |
45 |
Designing the CF-18 to be operationally ready
|
Dighton, Robert D. |
|
1982 |
22 |
4 |
p. 657-670 14 p. |
artikel |
46 |
Determination of valley splitting in (100) Si inversion layers
|
|
|
1982 |
22 |
4 |
p. 906- 1 p. |
artikel |
47 |
Digital communication devices
|
|
|
1982 |
22 |
4 |
p. 905- 1 p. |
artikel |
48 |
Digital generation of data modulated waveforms
|
Bozic, S.M. |
|
1982 |
22 |
4 |
p. 759-767 9 p. |
artikel |
49 |
Digital VLSI breeds next-generation TV receivers
|
|
|
1982 |
22 |
4 |
p. 901- 1 p. |
artikel |
50 |
Dynamic measurement of the water vapor content of integrated circuit packages using derivative infrared diode laser spectroscopy
|
|
|
1982 |
22 |
4 |
p. 898- 1 p. |
artikel |
51 |
Dynamics of charge collection from alpha-particle tracks in integrated circuits
|
|
|
1982 |
22 |
4 |
p. 905- 1 p. |
artikel |
52 |
Effect of boron-doping on the hydrogen evolution from a-Si: H films
|
|
|
1982 |
22 |
4 |
p. 907- 1 p. |
artikel |
53 |
Electrical characterization of crystal defects and oxygen in Czochralski silicon using a gate-controlled diode
|
|
|
1982 |
22 |
4 |
p. 907- 1 p. |
artikel |
54 |
Electric measurement and modelling of the emitter base junction behaviour of VLSI silicon transistor
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
55 |
Electron-beam projector suits up for submicrometer race
|
|
|
1982 |
22 |
4 |
p. 911- 1 p. |
artikel |
56 |
Electron beam writes next-generation IC patterns
|
|
|
1982 |
22 |
4 |
p. 911- 1 p. |
artikel |
57 |
Electronic structure of SiO2 (111) thin film
|
|
|
1982 |
22 |
4 |
p. 905- 1 p. |
artikel |
58 |
Electron microscopy and failure analysis
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
59 |
Electrostatic discharge failures of semiconductor devices
|
|
|
1982 |
22 |
4 |
p. 896- 1 p. |
artikel |
60 |
Electro-thermomigration in NMOS LSI devices
|
|
|
1982 |
22 |
4 |
p. 897- 1 p. |
artikel |
61 |
Energy levels and degeneracy ratios for chromium in silicon
|
|
|
1982 |
22 |
4 |
p. 907- 1 p. |
artikel |
62 |
Etching SiO2 in a reactive ion beam
|
|
|
1982 |
22 |
4 |
p. 911- 1 p. |
artikel |
63 |
Evaporated thin film RC filters
|
|
|
1982 |
22 |
4 |
p. 910- 1 p. |
artikel |
64 |
Experience pratique de deverminage de composants electroniques
|
Berger, M.C. |
|
1982 |
22 |
4 |
p. 671-680 10 p. |
artikel |
65 |
Experimental and mathematical determination of mechanical strains within plastic IC packages and their effect on devices during environmental tests
|
|
|
1982 |
22 |
4 |
p. 898- 1 p. |
artikel |
66 |
Experimental tests for Boson condensation and superconductivity in semiconductors during pulsed beam annealing
|
|
|
1982 |
22 |
4 |
p. 910- 1 p. |
artikel |
67 |
Fabrication of large-area thick-film hybrid circuits on RCA porcelain-coated steel substrates
|
|
|
1982 |
22 |
4 |
p. 909- 1 p. |
artikel |
68 |
Fabrication of nonreciprocal microwave components using thick film ferrimagnetic pastes
|
|
|
1982 |
22 |
4 |
p. 908- 1 p. |
artikel |
69 |
Fail-safe computer grows modularly
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
70 |
Failure modes in GaAs power FETs: Ohmic contact electromigration and formation of refractory oxides
|
|
|
1982 |
22 |
4 |
p. 897- 1 p. |
artikel |
71 |
Fast electron-beam lithography
|
|
|
1982 |
22 |
4 |
p. 910- 1 p. |
artikel |
72 |
Forefront of research on resists
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
73 |
Functional laser trimming of automotive electronics
|
|
|
1982 |
22 |
4 |
p. 910- 1 p. |
artikel |
74 |
Gettering processes for defect control
|
|
|
1982 |
22 |
4 |
p. 896- 1 p. |
artikel |
75 |
High-frequency thin-film transistor operates at 200°C
|
|
|
1982 |
22 |
4 |
p. 909- 1 p. |
artikel |
76 |
High speed SOS and GaAs IC testing in the 1980s
|
|
|
1982 |
22 |
4 |
p. 906-907 2 p. |
artikel |
77 |
How parts fail
|
|
|
1982 |
22 |
4 |
p. 896- 1 p. |
artikel |
78 |
Humidity activated surface leakage paths on T.O. case style glass headers
|
|
|
1982 |
22 |
4 |
p. 898- 1 p. |
artikel |
79 |
Humidity test of premolded chip carriers
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
80 |
Hybrid lithography
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
81 |
Implanted p-channel MOS transistor threshold voltage dependence on impurity segregation during oxidation
|
|
|
1982 |
22 |
4 |
p. 910- 1 p. |
artikel |
82 |
Improved atmospheric-pressure chemical-vapor-deposition system for depositing silica and phosphosilicate glass thin films
|
|
|
1982 |
22 |
4 |
p. 907- 1 p. |
artikel |
83 |
Infrared firing of thick film compositions
|
|
|
1982 |
22 |
4 |
p. 908- 1 p. |
artikel |
84 |
Integrated optics: a tutorial review
|
|
|
1982 |
22 |
4 |
p. 901- 1 p. |
artikel |
85 |
Internal gettering in silicon
|
|
|
1982 |
22 |
4 |
p. 906- 1 p. |
artikel |
86 |
Ion beam lithography
|
|
|
1982 |
22 |
4 |
p. 911- 1 p. |
artikel |
87 |
Ion implantation gettering; a fundamental approach
|
|
|
1982 |
22 |
4 |
p. 910- 1 p. |
artikel |
88 |
Iron-related deep levels in silicon
|
|
|
1982 |
22 |
4 |
p. 906- 1 p. |
artikel |
89 |
Laser and electron beam scanning of GaAs FETS
|
Edwards, W.D. |
|
1982 |
22 |
4 |
p. 735-746 12 p. |
artikel |
90 |
Latent B-radiation damage in hermetically sealed NMOS devices
|
|
|
1982 |
22 |
4 |
p. 897- 1 p. |
artikel |
91 |
Logic analyzer delivers test patterns, too
|
|
|
1982 |
22 |
4 |
p. 905- 1 p. |
artikel |
92 |
Logic simulation of MOS circuits based on information obtained from their masks
|
|
|
1982 |
22 |
4 |
p. 902-903 2 p. |
artikel |
93 |
Low-value nickel resistors electroless-plated on “IMST” substrate for power hybrid ICs
|
|
|
1982 |
22 |
4 |
p. 908- 1 p. |
artikel |
94 |
Maintainability applications using the matrix FMEA technique
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
95 |
Maintenance techniques in distributed communications switching systems
|
|
|
1982 |
22 |
4 |
p. 900-901 2 p. |
artikel |
96 |
Manufacturing high-density memory chips
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
97 |
Memory retention life at various environmental and life tests
|
|
|
1982 |
22 |
4 |
p. 900- 1 p. |
artikel |
98 |
Memory-window-size-temperature dependence of the metal-nitride-oxide-silicon (MNOS) structure
|
|
|
1982 |
22 |
4 |
p. 907- 1 p. |
artikel |
99 |
Methods of synthesizing active filters with hybrid integrated circuits of the Tesla WQU 011 type
|
|
|
1982 |
22 |
4 |
p. 910- 1 p. |
artikel |
100 |
Microcomputer real time software reliability and fault recovery
|
Lombardi, Fabrizio |
|
1982 |
22 |
4 |
p. 693-697 5 p. |
artikel |
101 |
Microelectronic test chips in integrated circuit manufacturing
|
|
|
1982 |
22 |
4 |
p. 904- 1 p. |
artikel |
102 |
Migration of silver from silver-loaded polyimide adhesive chip bonds at high temperatures
|
|
|
1982 |
22 |
4 |
p. 896- 1 p. |
artikel |
103 |
Model of impurity diffusion from an oxide source into silicon
|
|
|
1982 |
22 |
4 |
p. 906- 1 p. |
artikel |
104 |
Monolithic integrated Hall devices in silicon circuits
|
|
|
1982 |
22 |
4 |
p. 904-905 2 p. |
artikel |
105 |
Monte Carlo calculations based on the generalized electro-migration failure model
|
|
|
1982 |
22 |
4 |
p. 905- 1 p. |
artikel |
106 |
Multi-layer 2 MIL line technology
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
107 |
Multilayer resist systems for lithography
|
|
|
1982 |
22 |
4 |
p. 904- 1 p. |
artikel |
108 |
Multi-MOS structure speeds layout of VLSI chips
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
109 |
Multiuser IC cell library buys custom densities at gate-array prices
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
110 |
New concepts in early failure modelling
|
Govil, K.K. |
|
1982 |
22 |
4 |
p. 709-710 2 p. |
artikel |
111 |
New quantitative measurements of IC stress introduced by plastic packages
|
|
|
1982 |
22 |
4 |
p. 898- 1 p. |
artikel |
112 |
New thick film functional devices
|
|
|
1982 |
22 |
4 |
p. 908- 1 p. |
artikel |
113 |
NMOS voltage breakdown characteristics compared with accelerated life tests and field use data
|
|
|
1982 |
22 |
4 |
p. 900- 1 p. |
artikel |
114 |
On creating a reliable programming environment
|
Soi, Inder M. |
|
1982 |
22 |
4 |
p. 711-716 6 p. |
artikel |
115 |
On issues in fault-tolerant computer design
|
|
|
1982 |
22 |
4 |
p. 898- 1 p. |
artikel |
116 |
Optimization of access points for automatic test program generation and fault location in large analogue circuits and systems
|
|
|
1982 |
22 |
4 |
p. 899-900 2 p. |
artikel |
117 |
Optimization of RCA porcelain for compatibility with thick films
|
|
|
1982 |
22 |
4 |
p. 909- 1 p. |
artikel |
118 |
Overlooking the obvious
|
|
|
1982 |
22 |
4 |
p. 895- 1 p. |
artikel |
119 |
Packaging trade-offs for an LSI-oriented very high-speed computer, the HITAC M-200H
|
|
|
1982 |
22 |
4 |
p. 904- 1 p. |
artikel |
120 |
Phase dependent voltage contrast—an inexpensive SEM addition for LSI failure analysis
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
121 |
Precision crosssectional analysis of LSI and VLSI devices
|
|
|
1982 |
22 |
4 |
p. 897- 1 p. |
artikel |
122 |
Probability distribution functions for sampling schemes
|
|
|
1982 |
22 |
4 |
p. 898-899 2 p. |
artikel |
123 |
Process modeling of integrated circuit device technology
|
|
|
1982 |
22 |
4 |
p. 902- 1 p. |
artikel |
124 |
Programmable modules link up easily into custom test systems
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
125 |
Reliability analysis of a container spreader
|
Elsayed, E.A. |
|
1982 |
22 |
4 |
p. 723-734 12 p. |
artikel |
126 |
Reliability analysis of a two-unit cold standby redundant system with two operating modes
|
Gupta, S.M. |
|
1982 |
22 |
4 |
p. 747-758 12 p. |
artikel |
127 |
Reliability analysis of time-dependent cascade system with deterministic cycle times
|
Gopalan, M.N. |
|
1982 |
22 |
4 |
p. 841-872 32 p. |
artikel |
128 |
Reliability aspects of a floating gate E2 prom
|
|
|
1982 |
22 |
4 |
p. 897-898 2 p. |
artikel |
129 |
Reliability evaluation of a TMR computer system with multivariate exponential failures and a general repair
|
Osaki, Shunji |
|
1982 |
22 |
4 |
p. 781-787 7 p. |
artikel |
130 |
Reliability of DH Ga1−xAlxAs LEDs for lightwave communications
|
|
|
1982 |
22 |
4 |
p. 896- 1 p. |
artikel |
131 |
Reliability of PtSi-Ti/W-Al metallization system used in bipolar logics
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
132 |
Reliability problems in TTL-LS devices
|
|
|
1982 |
22 |
4 |
p. 895-896 2 p. |
artikel |
133 |
Reliability study of plastic encapsulated copper lead frame/epoxy die attach packaging system
|
|
|
1982 |
22 |
4 |
p. 896-897 2 p. |
artikel |
134 |
Reliability tests and stress in plastic integrated circuits
|
|
|
1982 |
22 |
4 |
p. 897- 1 p. |
artikel |
135 |
Remote polar phonon scattering for hot electrons in Si-inversion layers
|
|
|
1982 |
22 |
4 |
p. 906- 1 p. |
artikel |
136 |
Resistors screen printed on ceramic-coated steel substrates
|
|
|
1982 |
22 |
4 |
p. 909- 1 p. |
artikel |
137 |
Review of reliability improvements of GaAIAs laser diodes
|
Einhorn, Arthur J. |
|
1982 |
22 |
4 |
p. 769-780 12 p. |
artikel |
138 |
Scaled-down DIPs catch on for hybrid needs
|
|
|
1982 |
22 |
4 |
p. 901- 1 p. |
artikel |
139 |
SEM/EDAX analysis of pind test failures
|
|
|
1982 |
22 |
4 |
p. 896- 1 p. |
artikel |
140 |
s-Expected number of repairs and frequency of failures of a n-unit system with a single repair facility
|
|
|
1982 |
22 |
4 |
p. 900- 1 p. |
artikel |
141 |
Silicides nudging out polysilicon
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |
142 |
Silicon operating system standardizes software
|
|
|
1982 |
22 |
4 |
p. 905- 1 p. |
artikel |
143 |
Software implemented fault tolerance: A methodology
|
Lombardi, F. |
|
1982 |
22 |
4 |
p. 873-886 14 p. |
artikel |
144 |
Software maintainability—what it means and how to achieve it
|
|
|
1982 |
22 |
4 |
p. 901- 1 p. |
artikel |
145 |
Stochastic behaviour of a two-unit redundant system with switchover time
|
|
|
1982 |
22 |
4 |
p. 900- 1 p. |
artikel |
146 |
Stochastic behaviour of a two-unit repairable system subject to inspection
|
Gopalan, M.N. |
|
1982 |
22 |
4 |
p. 717-722 6 p. |
artikel |
147 |
Temperature dependent defect level for an ionic failure mechanism
|
|
|
1982 |
22 |
4 |
p. 896- 1 p. |
artikel |
148 |
Terminal and cooling requirements for LSI packages
|
|
|
1982 |
22 |
4 |
p. 901- 1 p. |
artikel |
149 |
Testing of properties for soldered leadless chip carrier assemblies
|
|
|
1982 |
22 |
4 |
p. 904- 1 p. |
artikel |
150 |
The design, construction, and evaluation of a porcelainized-steel-substrate hybrid-circuit module
|
|
|
1982 |
22 |
4 |
p. 908-909 2 p. |
artikel |
151 |
The effect of oxygen and argon on the interdiffusion of Au-Al thin film couples
|
|
|
1982 |
22 |
4 |
p. 909- 1 p. |
artikel |
152 |
The effects of moisture on multilayered ceramic top brazed flat packs
|
|
|
1982 |
22 |
4 |
p. 898- 1 p. |
artikel |
153 |
The field effect electron mobility of laser-annealed polycrystalline silicon MOSFETs
|
|
|
1982 |
22 |
4 |
p. 906- 1 p. |
artikel |
154 |
The mission profile
|
|
|
1982 |
22 |
4 |
p. 895- 1 p. |
artikel |
155 |
The reflow attachment and reliability testing of ceramic chip carriers
|
|
|
1982 |
22 |
4 |
p. 904- 1 p. |
artikel |
156 |
The reliability of electronic components. Part 2: the reliability of passive components
|
|
|
1982 |
22 |
4 |
p. 897- 1 p. |
artikel |
157 |
The use of 16-bit high level languages and microcomputer products to solve industrial control products
|
|
|
1982 |
22 |
4 |
p. 904- 1 p. |
artikel |
158 |
The use of marginal voltage measurements to detect and locate defects in digital microcircuits
|
|
|
1982 |
22 |
4 |
p. 897- 1 p. |
artikel |
159 |
The use of silicone RTV rubber for alpha particle protection on silicon integrated circuits
|
|
|
1982 |
22 |
4 |
p. 898- 1 p. |
artikel |
160 |
Thick film circuits for telecommunications equipment
|
|
|
1982 |
22 |
4 |
p. 908- 1 p. |
artikel |
161 |
Thick-film transformer advances hybrid isolation amplifier
|
|
|
1982 |
22 |
4 |
p. 909- 1 p. |
artikel |
162 |
Thin film metallization studies and device lifetime prediction using Al-Si and Al-Cu-Si conductor test bars
|
|
|
1982 |
22 |
4 |
p. 910- 1 p. |
artikel |
163 |
Thin film technology used in Bell System telecommunication circuits
|
|
|
1982 |
22 |
4 |
p. 908- 1 p. |
artikel |
164 |
Time-shifted rayleigh density for wearout failures
|
Govil, K.K. |
|
1982 |
22 |
4 |
p. 707-708 2 p. |
artikel |
165 |
Time-zero dielectric reliability test by a ramp method
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
166 |
Typical applications of ion implanted layer as a diffusion source for MOS and bipolar devices
|
|
|
1982 |
22 |
4 |
p. 910- 1 p. |
artikel |
167 |
2-Unit standby system with proviso for rest and maximum rest
|
|
|
1982 |
22 |
4 |
p. 900- 1 p. |
artikel |
168 |
Users want easier tests for VLSI
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
169 |
Vacancies in a Si (111) thin film
|
|
|
1982 |
22 |
4 |
p. 906- 1 p. |
artikel |
170 |
Vacuum operated mercury probe for CV plotting and profiling
|
|
|
1982 |
22 |
4 |
p. 905- 1 p. |
artikel |
171 |
VHSIC proposals take six fast tracks
|
|
|
1982 |
22 |
4 |
p. 901- 1 p. |
artikel |
172 |
VLSI tester runs at 50 MHz
|
|
|
1982 |
22 |
4 |
p. 899- 1 p. |
artikel |
173 |
VLSI test system reduces total test time
|
|
|
1982 |
22 |
4 |
p. 898- 1 p. |
artikel |
174 |
Wafer prepares to turn itself into a computer
|
|
|
1982 |
22 |
4 |
p. 901- 1 p. |
artikel |
175 |
Weapons systems analysis, part II: Simulation techniques and models
|
Sherif, Yosef S. |
|
1982 |
22 |
4 |
p. 789-817 29 p. |
artikel |
176 |
Weibull parameter estimation
|
Fung, Karen |
|
1982 |
22 |
4 |
p. 681-684 4 p. |
artikel |
177 |
X-ray lithography exposure machines
|
|
|
1982 |
22 |
4 |
p. 903- 1 p. |
artikel |