nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A cost model for skip-lot non-destructive sampling
|
|
|
1980 |
20 |
5 |
p. 754- 1 p. |
artikel |
2 |
A device analysis system based on laser scanning techniques
|
Nagase, Masashi |
|
1980 |
20 |
5 |
p. 717-735 19 p. |
artikel |
3 |
Advances in reduced pressure silicon epitaxy
|
|
|
1980 |
20 |
5 |
p. 762- 1 p. |
artikel |
4 |
A method for the rheological characterization of thick-film pastes
|
|
|
1980 |
20 |
5 |
p. 764- 1 p. |
artikel |
5 |
A multistate system with several failure modes and cold standby units
|
Yamashiro, Mitsuo |
|
1980 |
20 |
5 |
p. 673-677 5 p. |
artikel |
6 |
Analysis of a degraded multistate system with general repair-time distributions
|
Yamashiro, Mitsuo |
|
1980 |
20 |
5 |
p. 647-650 4 p. |
artikel |
7 |
An approach to computer aided design of multilayer hybrids
|
|
|
1980 |
20 |
5 |
p. 763- 1 p. |
artikel |
8 |
A new technique for the determination of the charge centroid in MNOS structures
|
|
|
1980 |
20 |
5 |
p. 762- 1 p. |
artikel |
9 |
Application of thermodiffusion for the purification of solids
|
|
|
1980 |
20 |
5 |
p. 763- 1 p. |
artikel |
10 |
A practical air-fireable base metal resistor system
|
|
|
1980 |
20 |
5 |
p. 764- 1 p. |
artikel |
11 |
A real life MTBF growth program for a deployed radar
|
|
|
1980 |
20 |
5 |
p. 757- 1 p. |
artikel |
12 |
A reliability model for error correcting memory systems
|
|
|
1980 |
20 |
5 |
p. 753-754 2 p. |
artikel |
13 |
A review of two dimensional long channel mosfet modeling
|
Kumar, Umesh |
|
1980 |
20 |
5 |
p. 585-587 3 p. |
artikel |
14 |
A time series control chart for a nuclear reactor
|
|
|
1980 |
20 |
5 |
p. 755- 1 p. |
artikel |
15 |
A transmission-line analog simulating thin-film distributed-RC elements
|
|
|
1980 |
20 |
5 |
p. 763- 1 p. |
artikel |
16 |
Availability analysis of systems with two types of repair facilities
|
Dhillon, Balbir S |
|
1980 |
20 |
5 |
p. 679-686 8 p. |
artikel |
17 |
Bibliography of literature on medical equipment reliability
|
Dhillon, Balbir S |
|
1980 |
20 |
5 |
p. 737-742 6 p. |
artikel |
18 |
Boundary conditions at p-n junctions
|
|
|
1980 |
20 |
5 |
p. 763- 1 p. |
artikel |
19 |
Bubble memory family extends to megabit size
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
20 |
Bumped tape automated bonding (BTAB) practical application guidelines
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |
21 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1980 |
20 |
5 |
p. 553-555 3 p. |
artikel |
22 |
CERT technology applied to an airborne radar
|
|
|
1980 |
20 |
5 |
p. 758- 1 p. |
artikel |
23 |
Characterisation of linearly graded p-n junction
|
|
|
1980 |
20 |
5 |
p. 762- 1 p. |
artikel |
24 |
Characterization of thermal compression wire bonds to thick-film conductors on procelain substrates
|
|
|
1980 |
20 |
5 |
p. 764- 1 p. |
artikel |
25 |
C-MOS picks up ground
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
26 |
Compliance test plans for availability
|
|
|
1980 |
20 |
5 |
p. 756- 1 p. |
artikel |
27 |
Conductance noise investigations on symmetrical planar resistors with finite contacts
|
|
|
1980 |
20 |
5 |
p. 763- 1 p. |
artikel |
28 |
Conference report
|
Jacobs, Richard M |
|
1980 |
20 |
5 |
p. 565-570 6 p. |
artikel |
29 |
Consonance sets for 2-parameter Weibull and exponential distributions
|
|
|
1980 |
20 |
5 |
p. 754- 1 p. |
artikel |
30 |
Contact resistance in metal-semiconductor systems
|
|
|
1980 |
20 |
5 |
p. 762- 1 p. |
artikel |
31 |
Control charts for Weibull processes with standards given
|
|
|
1980 |
20 |
5 |
p. 754- 1 p. |
artikel |
32 |
Custom designed LSI for intrumentation
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |
33 |
CW laser annealing of boron and arsenic-implanted silicon; electrical properties, crystalline structure and limitations
|
|
|
1980 |
20 |
5 |
p. 765- 1 p. |
artikel |
34 |
Deterrence and strict liability for defective products in the United Kingdom
|
|
|
1980 |
20 |
5 |
p. 753- 1 p. |
artikel |
35 |
Development of in-flight steady-state failure rates
|
|
|
1980 |
20 |
5 |
p. 757- 1 p. |
artikel |
36 |
Drawing the lines for v.l.s.i.
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |
37 |
Electrical properties of anodic aluminium oxide films
|
|
|
1980 |
20 |
5 |
p. 763- 1 p. |
artikel |
38 |
Electric equivalent models of glass thick films
|
|
|
1980 |
20 |
5 |
p. 764- 1 p. |
artikel |
39 |
Enhancing reliability calculations through desk-top computers
|
|
|
1980 |
20 |
5 |
p. 755- 1 p. |
artikel |
40 |
Fine-line lithography nears its day
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
41 |
Geometry effects of small MOSFET devices
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
42 |
Gold traps in (100) silicon-silicon dioxide interfaces
|
|
|
1980 |
20 |
5 |
p. 762- 1 p. |
artikel |
43 |
Heat exchange optimization technique for high-power hybrid IC's
|
|
|
1980 |
20 |
5 |
p. 764- 1 p. |
artikel |
44 |
IC combines optical sensor, trigger
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |
45 |
Improved R, M, and LCC for switching power supplies
|
|
|
1980 |
20 |
5 |
p. 756- 1 p. |
artikel |
46 |
Inspection policy for two-unit parallel redundant system
|
Adachi, Kouichi |
|
1980 |
20 |
5 |
p. 603-612 10 p. |
artikel |
47 |
Investigations into the most favourable application of projection lithography
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
48 |
J-K flip-flop for C-MOS integrated circuits
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
49 |
Justifying vibration monitors in nuclear plants
|
|
|
1980 |
20 |
5 |
p. 756- 1 p. |
artikel |
50 |
k-Sample maximum likelihood ratio test for change of Weibull shape parameter
|
|
|
1980 |
20 |
5 |
p. 755- 1 p. |
artikel |
51 |
Laser annealing to round the edges of silicon structures
|
|
|
1980 |
20 |
5 |
p. 765- 1 p. |
artikel |
52 |
Likelihood inference for life test data
|
|
|
1980 |
20 |
5 |
p. 755-756 2 p. |
artikel |
53 |
Limit values and properties of bipolar and MOS transistors for highest integrated (VLSI) switching circuits
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |
54 |
LSI ready to make a mark on packet-switching networks
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
55 |
Melt and solution growth of bulk single crystals of quaternary III–V alloys
|
|
|
1980 |
20 |
5 |
p. 763- 1 p. |
artikel |
56 |
Microcomputer can stand alone or join forces with other chips
|
|
|
1980 |
20 |
5 |
p. 758- 1 p. |
artikel |
57 |
Microcomputer grants wishes
|
|
|
1980 |
20 |
5 |
p. 758- 1 p. |
artikel |
58 |
Microprocessor architecture
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
59 |
Microprocessor implementation of the Kalman filter
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
60 |
Microprocessors: from characterisation to production
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
61 |
Microprocessor trends
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
62 |
Microprogrammable digital filter implementation using bipolar microprocessors
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
63 |
MIL-STD-1679 (NAVY)
|
|
|
1980 |
20 |
5 |
p. 757- 1 p. |
artikel |
64 |
Minimize downstream costs through applied maintainability
|
|
|
1980 |
20 |
5 |
p. 754-755 2 p. |
artikel |
65 |
Modelling of integrated MOS gates and determination of the network analysis parameters from the layout
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
66 |
Modelling the repairability function by the first passage time distribution of Brownian motion
|
Sherif, Y.S |
|
1980 |
20 |
5 |
p. 687-691 5 p. |
artikel |
67 |
MOS sampled-data technique shrinks a-d converter chip
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
68 |
Mutual feedback synchronisation by unequal tests
|
Dickens, F.B |
|
1980 |
20 |
5 |
p. 599-601 3 p. |
artikel |
69 |
New Multiwire meets the challenge of interconnecting chipcarriers
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
70 |
No-growth growth curves
|
|
|
1980 |
20 |
5 |
p. 758- 1 p. |
artikel |
71 |
On formulation of a reliable cost allocation strategy in centralized computer networks
|
Soi, Inder M |
|
1980 |
20 |
5 |
p. 665-671 7 p. |
artikel |
72 |
On repairable component fault tree evaluation
|
|
|
1980 |
20 |
5 |
p. 756- 1 p. |
artikel |
73 |
On the design of improved failure detection experiments in synchronous sequential machines based on terminal measurements
|
|
|
1980 |
20 |
5 |
p. 754- 1 p. |
artikel |
74 |
On the self diffusion entropy in silicon
|
|
|
1980 |
20 |
5 |
p. 762- 1 p. |
artikel |
75 |
On the term “activation energy” in accelerated lifetime tests of plastic encapsulated semiconductor components
|
Moeller, A |
|
1980 |
20 |
5 |
p. 651-664 14 p. |
artikel |
76 |
Packing a signal processor onto a single digital board
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
77 |
Part 2: LSI circuit simplifies packet-network connection
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
78 |
Potential distribution and multi-terminal DC resistance computations for LSI technology
|
|
|
1980 |
20 |
5 |
p. 760-761 2 p. |
artikel |
79 |
Principe d'un analyseur de spectre optique utilisant les couches minces pulverisées
|
|
|
1980 |
20 |
5 |
p. 764- 1 p. |
artikel |
80 |
Principles for the microelectronic realisation of frequency-selective circuits
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
81 |
Principles of screening and cost effective product assurance
|
Ryerson, C.M |
|
1980 |
20 |
5 |
p. 693-715 23 p. |
artikel |
82 |
Procurement costs dictate specification tailoring
|
|
|
1980 |
20 |
5 |
p. 755- 1 p. |
artikel |
83 |
Productivity increase in a planar plasma deposition system
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
84 |
Properties of the capacitance transient induced in GaAs MOS structures
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
85 |
Provisioning data quality control criteria—a Delphi survey
|
|
|
1980 |
20 |
5 |
p. 754- 1 p. |
artikel |
86 |
Publications, notices, calls for papers, etc.
|
|
|
1980 |
20 |
5 |
p. 557-564 8 p. |
artikel |
87 |
Radial distortion in cambered wafers
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
88 |
Rational risk assessment for defense system safety
|
|
|
1980 |
20 |
5 |
p. 758- 1 p. |
artikel |
89 |
Recent advances in electron beam systems for mask making
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |
90 |
Reliability block diagrams and “Petri” nets
|
Joller, J.M |
|
1980 |
20 |
5 |
p. 613-624 12 p. |
artikel |
91 |
Reliability evaluation of a network with delay
|
|
|
1980 |
20 |
5 |
p. 753- 1 p. |
artikel |
92 |
Reliability evaluation of a two-unit unrepairable system
|
Yamada, Shigeru |
|
1980 |
20 |
5 |
p. 589-597 9 p. |
artikel |
93 |
Reliability growth: A survey
|
Dhillon, Balbir S |
|
1980 |
20 |
5 |
p. 743-754 12 p. |
artikel |
94 |
Reliability models for switches for duplicated computer modules
|
Schneeweiss, Winfrid G |
|
1980 |
20 |
5 |
p. 571-579 9 p. |
artikel |
95 |
Reliability of clip-on terminals soldered to TaTa2NNiCrPdAu thin films
|
|
|
1980 |
20 |
5 |
p. 763- 1 p. |
artikel |
96 |
Reliability optimization by generalized Lagrangian-function and reduced-gradient methods
|
|
|
1980 |
20 |
5 |
p. 754- 1 p. |
artikel |
97 |
Reliability optimization with multiple properties and integer variables
|
|
|
1980 |
20 |
5 |
p. 755- 1 p. |
artikel |
98 |
RELSIM—a systems reliability simulation code
|
|
|
1980 |
20 |
5 |
p. 757- 1 p. |
artikel |
99 |
Review and analysis of laser annealing
|
|
|
1980 |
20 |
5 |
p. 765- 1 p. |
artikel |
100 |
Simulating multi-skill maintenance: a case study
|
|
|
1980 |
20 |
5 |
p. 757- 1 p. |
artikel |
101 |
Single IC emits multiple signals
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |
102 |
SiSiO2 interface state spectroscopy using MOS tunneling structures
|
|
|
1980 |
20 |
5 |
p. 762- 1 p. |
artikel |
103 |
Some properties of logic-trees containing mutually-exclusive primary-events
|
|
|
1980 |
20 |
5 |
p. 754- 1 p. |
artikel |
104 |
Spacial resolution of SEM-EBIC images
|
|
|
1980 |
20 |
5 |
p. 762- 1 p. |
artikel |
105 |
Spare/repair parts provisioning recommendations
|
|
|
1980 |
20 |
5 |
p. 757- 1 p. |
artikel |
106 |
Stability of lateral pnp transistors during accelerated aging
|
|
|
1980 |
20 |
5 |
p. 753- 1 p. |
artikel |
107 |
Statistical fluctuations of dopant impurities in ion-implanted bipolar transistor structures and the minimum device dimensions for vlsi system reliability
|
Prucnal, P.R |
|
1980 |
20 |
5 |
p. 633-646 14 p. |
artikel |
108 |
Statistical functions to represent various types of hazard rates
|
Dhillon, Balbir S |
|
1980 |
20 |
5 |
p. 581-584 4 p. |
artikel |
109 |
Survey of computer-aided electrical analysis of integrated circuit interconnections
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
110 |
System maintainability verification—the paired time comparison (PTC) method
|
|
|
1980 |
20 |
5 |
p. 756- 1 p. |
artikel |
111 |
TCE oxidation for the elimination of oxidation-induced stacking faults in silicon
|
|
|
1980 |
20 |
5 |
p. 762- 1 p. |
artikel |
112 |
Temperature dependence of open-circuit photovoltage of a back-surface field semiconductor junction
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
113 |
The determination of transit system dependability
|
|
|
1980 |
20 |
5 |
p. 754- 1 p. |
artikel |
114 |
The effect of endless burn-in on reliability growth projections
|
|
|
1980 |
20 |
5 |
p. 756-757 2 p. |
artikel |
115 |
The effect of statistical and systematic failures on the process yield of integrated circuits
|
|
|
1980 |
20 |
5 |
p. 753- 1 p. |
artikel |
116 |
The electroforming of thin films of polypropylene
|
|
|
1980 |
20 |
5 |
p. 763- 1 p. |
artikel |
117 |
The explosion of resin moulded power integrated circuits and the corresponding countermeasures
|
Isagawa, Masaaki |
|
1980 |
20 |
5 |
p. 625-631 7 p. |
artikel |
118 |
The fallacious reliability demonstration test
|
|
|
1980 |
20 |
5 |
p. 757-758 2 p. |
artikel |
119 |
The resistivity of thin gold films
|
|
|
1980 |
20 |
5 |
p. 764- 1 p. |
artikel |
120 |
Thermal design criteria for an optimized cryopump
|
|
|
1980 |
20 |
5 |
p. 764- 1 p. |
artikel |
121 |
Thermal history of substrates during sputtering and sputter etching
|
|
|
1980 |
20 |
5 |
p. 764- 1 p. |
artikel |
122 |
The role of direct step-on-the-wafer in microlithography strategy for the 80's
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
123 |
Titanium in silicon as a deep level impurity
|
|
|
1980 |
20 |
5 |
p. 762- 1 p. |
artikel |
124 |
Treatment of uncertainty in life cycle costing
|
|
|
1980 |
20 |
5 |
p. 758- 1 p. |
artikel |
125 |
Trends in ion implantation in gallium arsenide
|
|
|
1980 |
20 |
5 |
p. 765- 1 p. |
artikel |
126 |
Use of microprocessors in large digital exchanges
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
127 |
VLSI tester rushes along at 100 MHz
|
|
|
1980 |
20 |
5 |
p. 759- 1 p. |
artikel |
128 |
5-volt-only, nonvolatile RAM owes it all to polysilicon
|
|
|
1980 |
20 |
5 |
p. 761- 1 p. |
artikel |
129 |
Wafer homogeneity tester using variable frequency IR absorption scanning
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |
130 |
Wafer stepper steps up yield and resolution in IC lithography
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |
131 |
X-ray lithography
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |
132 |
X-ray lithography for one micron LSI
|
|
|
1980 |
20 |
5 |
p. 760- 1 p. |
artikel |