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                                       Details for article 107 of 132 found articles
 
 
  Statistical fluctuations of dopant impurities in ion-implanted bipolar transistor structures and the minimum device dimensions for vlsi system reliability
 
 
Title: Statistical fluctuations of dopant impurities in ion-implanted bipolar transistor structures and the minimum device dimensions for vlsi system reliability
Author: Prucnal, P.R
Hwang, W
Card, H.C
Appeared in: Microelectronics reliability
Paging: Volume 20 (1980) nr. 5 pages 14 p.
Year: 1980
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 107 of 132 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands