| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computerized LCC/ORLA methodology
|
|
|
1980
|
20 |
4 |
p. 539-
1 p.
|
artikel
|
| 2 |
A computer method for fault detection in combinational circuits
|
|
|
1980
|
20 |
4 |
p. 543-
1 p.
|
artikel
|
| 3 |
Advances in projection microlithography
|
|
|
1980
|
20 |
4 |
p. 546-
1 p.
|
artikel
|
| 4 |
A fault tree approach to quality control by variables
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 5 |
Aluminum and aluminum alloy sputter deposition for VLSI
|
|
|
1980
|
20 |
4 |
p. 546-
1 p.
|
artikel
|
| 6 |
A method for the determination of the stress in, and Young's modulus of silicon nitride passivation layers
|
|
|
1980
|
20 |
4 |
p. 549-
1 p.
|
artikel
|
| 7 |
Analysis of a digital PSK modulator
|
Bozic, S.M
|
|
1980
|
20 |
4 |
p. 509-512
4 p.
|
artikel
|
| 8 |
An approach to computer aided design of multilayer hybrids Part I
|
|
|
1980
|
20 |
4 |
p. 550-
1 p.
|
artikel
|
| 9 |
An availability calculation for k-out-of-N redundant system with common-cause failures and replacement
|
Chung, Who Kee
|
|
1980
|
20 |
4 |
p. 517-519
3 p.
|
artikel
|
| 10 |
An efficient bottom-up algorithm for enumerating minimal cut sets of fault trees
|
|
|
1980
|
20 |
4 |
p. 543-
1 p.
|
artikel
|
| 11 |
A new approach to high volume hermetic hybrid packaging
|
|
|
1980
|
20 |
4 |
p. 551-
1 p.
|
artikel
|
| 12 |
An improved interconnection technique
|
Singh, Awater
|
|
1980
|
20 |
4 |
p. 447-448
2 p.
|
artikel
|
| 13 |
An optical pattern generator for large area devices and direct wafer stepping
|
|
|
1980
|
20 |
4 |
p. 546-
1 p.
|
artikel
|
| 14 |
AN/UYK-20 computer production reliability test
|
|
|
1980
|
20 |
4 |
p. 539-
1 p.
|
artikel
|
| 15 |
Application and reliability of copper plated through hole printed wiring boards
|
|
|
1980
|
20 |
4 |
p. 537-
1 p.
|
artikel
|
| 16 |
Application of program graphs and complexity analysis to software development and testing
|
|
|
1980
|
20 |
4 |
p. 541-
1 p.
|
artikel
|
| 17 |
Application of the theory of sets to the problem of the localisation of faults in electronic circuits
|
|
|
1980
|
20 |
4 |
p. 542-543
2 p.
|
artikel
|
| 18 |
Applications of auger and photoelectron spectroscopy in characterizing IC materials
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 19 |
Applications of the scanning electron microscope EBIC mode to semiconductor device evaluation and failure analysis
|
|
|
1980
|
20 |
4 |
p. 538-
1 p.
|
artikel
|
| 20 |
Apportionment of overall system reliability among subsystems
|
|
|
1980
|
20 |
4 |
p. 543-
1 p.
|
artikel
|
| 21 |
Approximate calculation of inspection policy with weibull failure times
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 22 |
A quick method for calculating temperatures arising from the rear cooled heat source geometries found in micro-electronics
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 23 |
A reliability growth management approach
|
|
|
1980
|
20 |
4 |
p. 538-539
2 p.
|
artikel
|
| 24 |
A simple event-definition notation and associated computer programs
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 25 |
Asymptotic distribution of a standby system with delayed repair
|
|
|
1980
|
20 |
4 |
p. 541-
1 p.
|
artikel
|
| 26 |
A thin-film transistor with polytetrafluoroethylene as insulator
|
|
|
1980
|
20 |
4 |
p. 550-
1 p.
|
artikel
|
| 27 |
A thomas-fermi description of the screening around the vacancy in silicon: charge state dependence
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 28 |
A two-unit parallel redundant system with bivariate exponential lifetimes
|
Osaki, Shunji
|
|
1980
|
20 |
4 |
p. 521-523
3 p.
|
artikel
|
| 29 |
Automated parametric testing of ECL and CML devices
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 30 |
Availability analysis of two-unit warm standby system with inspection time
|
Adachi, Kouichi
|
|
1980
|
20 |
4 |
p. 449-455
7 p.
|
artikel
|
| 31 |
Availability of a redundant system with replacement and repair
|
|
|
1980
|
20 |
4 |
p. 540-
1 p.
|
artikel
|
| 32 |
Availability of networks subject to scheduled-maintenance
|
|
|
1980
|
20 |
4 |
p. 540-
1 p.
|
artikel
|
| 33 |
14-bit s-d converter gets smaller
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 34 |
Calculation of system reliability by algebraic manipulation of probability expressions
|
|
|
1980
|
20 |
4 |
p. 543-
1 p.
|
artikel
|
| 35 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1980
|
20 |
4 |
p. 393-395
3 p.
|
artikel
|
| 36 |
Characterization on phosphorus implanted low pressure chemical vapor deposited polycrystalline silicon
|
|
|
1980
|
20 |
4 |
p. 550-
1 p.
|
artikel
|
| 37 |
Charge build-up in mos system under ionizing radiation
|
Srivastava, Swaraj
|
|
1980
|
20 |
4 |
p. 529-531
3 p.
|
artikel
|
| 38 |
Charge neutrality and the internal electric field produced by impurity diffusion
|
|
|
1980
|
20 |
4 |
p. 549-
1 p.
|
artikel
|
| 39 |
Chip market overestimated, says ITT
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 40 |
CMOS, present and future
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 41 |
Comments on the Lapp-Powers “computer-aided synthesis of fault trees”
|
|
|
1980
|
20 |
4 |
p. 540-
1 p.
|
artikel
|
| 42 |
Component failure cost
|
|
|
1980
|
20 |
4 |
p. 537-
1 p.
|
artikel
|
| 43 |
Comprehensive test patterns with modular test structures: The 2 by N probe-pad array approach
|
|
|
1980
|
20 |
4 |
p. 546-
1 p.
|
artikel
|
| 44 |
Computer simulation of system testing strategies for fault elimination
|
|
|
1980
|
20 |
4 |
p. 543-
1 p.
|
artikel
|
| 45 |
Considerations in R & M program optimization
|
|
|
1980
|
20 |
4 |
p. 539-
1 p.
|
artikel
|
| 46 |
Correcting errors digitally in data acquisition and control
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 47 |
Cost effective testing of microprocessor components on general purpose LSI test systems
|
|
|
1980
|
20 |
4 |
p. 542-
1 p.
|
artikel
|
| 48 |
Cost optimization subject to availability constraints
|
|
|
1980
|
20 |
4 |
p. 538-539
2 p.
|
artikel
|
| 49 |
CVD films for interlayer dielectrics
|
|
|
1980
|
20 |
4 |
p. 551-
1 p.
|
artikel
|
| 50 |
Dependence of the saturation intensity of p-type germanium on impurity concentration and residual absorption at 10.59 μm
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 51 |
Description and use of electron beam accessed memory systems
|
|
|
1980
|
20 |
4 |
p. 552-
1 p.
|
artikel
|
| 52 |
Determination of existing stress in silicon films on sapphire substrate using raman spectroscopy
|
|
|
1980
|
20 |
4 |
p. 549-
1 p.
|
artikel
|
| 53 |
Development system lays basis for fully integrated VLSI design center
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 54 |
Discrete-time ordering policies
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 55 |
Effects of optical beam size on diffusion length measured by the surface photo-voltage method
|
|
|
1980
|
20 |
4 |
p. 546-
1 p.
|
artikel
|
| 56 |
Empirical validation of three software error prediction models
|
|
|
1980
|
20 |
4 |
p. 541-
1 p.
|
artikel
|
| 57 |
Enumeration of all simple paths in a communication network
|
Misra, R.B
|
|
1980
|
20 |
4 |
p. 419-426
8 p.
|
artikel
|
| 58 |
Epitaxial process is highly selective in depositing silicon
|
|
|
1980
|
20 |
4 |
p. 546-
1 p.
|
artikel
|
| 59 |
Evaluating single point failures for safety and reliability
|
|
|
1980
|
20 |
4 |
p. 541-
1 p.
|
artikel
|
| 60 |
Evaluating the KTI Monte Carlo method for system reliability calculations
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 61 |
Event-altered rate models for general reliability analysis
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 62 |
Fabrication of a six level multilayer structure
|
|
|
1980
|
20 |
4 |
p. 551-
1 p.
|
artikel
|
| 63 |
Fault-tolerant software
|
|
|
1980
|
20 |
4 |
p. 541-
1 p.
|
artikel
|
| 64 |
Fault trees and discrete probability spaces
|
Joller, J.M
|
|
1980
|
20 |
4 |
p. 435-445
11 p.
|
artikel
|
| 65 |
Four-chip hybrid carrier holds down system costs
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 66 |
Future microelectronic devices: materials aspects and interfacial phenomena
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 67 |
Good bits swapped for bad in 64-kilobit E-PROM
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 68 |
Graphical analysis of repairable systems
|
|
|
1980
|
20 |
4 |
p. 540-
1 p.
|
artikel
|
| 69 |
High threshold voltages in small geometry mos transistors due to edge contamination
|
Nevin, Joseph H
|
|
1980
|
20 |
4 |
p. 457-463
7 p.
|
artikel
|
| 70 |
High voltage stable resistors on multilayer dielectric
|
|
|
1980
|
20 |
4 |
p. 550-
1 p.
|
artikel
|
| 71 |
How Japanese manufacturers achieve high IC reliability
|
|
|
1980
|
20 |
4 |
p. 537-
1 p.
|
artikel
|
| 72 |
IC controls loudness of TV sound channel
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 73 |
IC makers ponder polysilicon shortage predicted by year's end
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 74 |
ILPOS—a programme system for the computer-aided coarse layout design of I2L-circuits
|
|
|
1980
|
20 |
4 |
p. 545-546
2 p.
|
artikel
|
| 75 |
Improved software reliability through requirements verification
|
|
|
1980
|
20 |
4 |
p. 540-
1 p.
|
artikel
|
| 76 |
Improved technique for decapsulation of epoxy-packaged semiconductor devices and microcircuits
|
|
|
1980
|
20 |
4 |
p. 537-538
2 p.
|
artikel
|
| 77 |
Improving system safety through risk assessment
|
|
|
1980
|
20 |
4 |
p. 539-
1 p.
|
artikel
|
| 78 |
Impurity-assisted intervalley scattering in uniaxially stressed silicon
|
|
|
1980
|
20 |
4 |
p. 549-
1 p.
|
artikel
|
| 79 |
Impurity interaction and the donor-acceptor recombination in semiconductors
|
|
|
1980
|
20 |
4 |
p. 548-549
2 p.
|
artikel
|
| 80 |
Indefinite immittance matrices of a five-layer circular geometry thin-film integrated structure
|
Khan, M.J.R
|
|
1980
|
20 |
4 |
p. 501-504
4 p.
|
artikel
|
| 81 |
Influence of the growth parameters in GaAs vapour phase epitaxy
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 82 |
Interpretation of C-V measurements for determining the doping profile in semiconductors
|
|
|
1980
|
20 |
4 |
p. 550-
1 p.
|
artikel
|
| 83 |
Introduction to chemical vapor deposition
|
|
|
1980
|
20 |
4 |
p. 549-
1 p.
|
artikel
|
| 84 |
Inverting and minimizing Boolean functions, minimal paths and minimal cuts: noncoherent system analysis
|
|
|
1980
|
20 |
4 |
p. 543-544
2 p.
|
artikel
|
| 85 |
Investigation of Ar ion implant gettering of gold in silicon by m.o.s. and Rutherford backscattering techniques
|
|
|
1980
|
20 |
4 |
p. 552-
1 p.
|
artikel
|
| 86 |
Isoplanar-S scales down for new heights in performance
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 87 |
Justifying burn-in—an analysis
|
|
|
1980
|
20 |
4 |
p. 542-
1 p.
|
artikel
|
| 88 |
Limits of models in reliability engineering
|
|
|
1980
|
20 |
4 |
p. 539-
1 p.
|
artikel
|
| 89 |
Lithography system adds second E beam for accurate positioning
|
|
|
1980
|
20 |
4 |
p. 546-
1 p.
|
artikel
|
| 90 |
LSI processor mirror high-performance minicomputer
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 91 |
Magnetron sputtered titanium-tungsten films
|
|
|
1980
|
20 |
4 |
p. 551-
1 p.
|
artikel
|
| 92 |
Markov analyses of nuclear plant failure dependencies
|
|
|
1980
|
20 |
4 |
p. 539-
1 p.
|
artikel
|
| 93 |
Mask making for a custom VLSI design house
|
|
|
1980
|
20 |
4 |
p. 546-
1 p.
|
artikel
|
| 94 |
Memory finds and fixes errors to raise reliability of microcomputer
|
|
|
1980
|
20 |
4 |
p. 543-
1 p.
|
artikel
|
| 95 |
Microcrack detection in silicon crystals with an ultrasonic sonoprobe
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 96 |
Microprocessor adds flexibility to television control system
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 97 |
Millimeter-wave ICs spring from the lab
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 98 |
Modern analytical techniques for failure analysis
|
|
|
1980
|
20 |
4 |
p. 541-
1 p.
|
artikel
|
| 99 |
Monolithic d-a converter operates on single supply
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 100 |
Mosfets with low threshold value
|
Singh, A
|
|
1980
|
20 |
4 |
p. 533-534
2 p.
|
artikel
|
| 101 |
Multi-state device redundant systems with common-cause failures and one standby unit
|
Dhillon, Balbir S
|
|
1980
|
20 |
4 |
p. 411-417
7 p.
|
artikel
|
| 102 |
Non-destructive examination of eutectic die-bonds in high power silicon devices using air-coupled ultrasound
|
|
|
1980
|
20 |
4 |
p. 538-539
2 p.
|
artikel
|
| 103 |
10-ns monolithic d-a converter keeps bipolar drive circuits hustling
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 104 |
Observation of lifetime controlling recombination centres in silicon power devices
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 105 |
Ohmic contacts in GaAs
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 106 |
On a series parallel system
|
Subramanian, R
|
|
1980
|
20 |
4 |
p. 525-527
3 p.
|
artikel
|
| 107 |
On program testing issues in software reliability—A survey
|
Soi, Inder M
|
|
1980
|
20 |
4 |
p. 483-488
6 p.
|
artikel
|
| 108 |
On the behaviour of buried oxygen implanted layers in highly doped GaAs
|
|
|
1980
|
20 |
4 |
p. 549-
1 p.
|
artikel
|
| 109 |
Optimal periodic maintenance policy for machines subject to deterioration and random breakdown
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 110 |
Optimal scheduled-maintenance policy based on multiplecriteria decision-making
|
|
|
1980
|
20 |
4 |
p. 543-
1 p.
|
artikel
|
| 111 |
Optimal time intervals for testing hypotheses on computer software errors
|
|
|
1980
|
20 |
4 |
p. 541-
1 p.
|
artikel
|
| 112 |
Optimum policies when preventive maintenance is imperfect
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 113 |
Optimum policy of one-unit system with two types of maintenance and minimal repair
|
Adachi, Kouichi
|
|
1980
|
20 |
4 |
p. 489-493
5 p.
|
artikel
|
| 114 |
Package piggybacks standard E-PROM to emulate one-chip microcomputer
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 115 |
Parametric methods in the analysis of survival data
|
Gross, Alan J
|
|
1980
|
20 |
4 |
p. 477-481
5 p.
|
artikel
|
| 116 |
Partial RAMs can fill today's memory boards
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 117 |
P2C-MOS microcomputer family attains n-MOS performance
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 118 |
Peripheral controller turns to 12L
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 119 |
Pinhole elimination in hard masks
|
|
|
1980
|
20 |
4 |
p. 546-
1 p.
|
artikel
|
| 120 |
Positron annihilation in boron-implanted N-type silicon
|
|
|
1980
|
20 |
4 |
p. 549-
1 p.
|
artikel
|
| 121 |
Practical cleaning procedures for vacuum deposition equipment
|
|
|
1980
|
20 |
4 |
p. 551-
1 p.
|
artikel
|
| 122 |
Preliminary studies of a thick film hybrid base coupled logic (BCL) circuit
|
|
|
1980
|
20 |
4 |
p. 551-
1 p.
|
artikel
|
| 123 |
Preparation for LCC proposals and contracts
|
|
|
1980
|
20 |
4 |
p. 540-
1 p.
|
artikel
|
| 124 |
Processing latitude in photoresist patterning
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 125 |
Publications, notices, calls for papers, etc.
|
|
|
1980
|
20 |
4 |
p. 397-409
13 p.
|
artikel
|
| 126 |
Quality improvement through quality progress
|
|
|
1980
|
20 |
4 |
p. 538-539
2 p.
|
artikel
|
| 127 |
Quantitative specification evaluation
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 128 |
Random faults in semiconductor storage equipment
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 129 |
Regulatory cost management and product assurance
|
|
|
1980
|
20 |
4 |
p. 539-
1 p.
|
artikel
|
| 130 |
Reliability analysis of 3-state systems
|
|
|
1980
|
20 |
4 |
p. 543-
1 p.
|
artikel
|
| 131 |
Reliability described by belief functions
|
|
|
1980
|
20 |
4 |
p. 539-
1 p.
|
artikel
|
| 132 |
Reliability evaluation of computer programs
|
Suri, P.K
|
|
1980
|
20 |
4 |
p. 465-470
6 p.
|
artikel
|
| 133 |
Reliability is in eye of beholder
|
|
|
1980
|
20 |
4 |
p. 537-
1 p.
|
artikel
|
| 134 |
Reliable thyristors and triacs in TO-220 plastic packages. P. Blunt
|
|
|
1980
|
20 |
4 |
p. 538-539
2 p.
|
artikel
|
| 135 |
Repair priority effect on availability of a 2-unit system
|
|
|
1980
|
20 |
4 |
p. 542-
1 p.
|
artikel
|
| 136 |
Replacement models with inspection and preventive maintenance
|
Nakagawa, T
|
|
1980
|
20 |
4 |
p. 427-433
7 p.
|
artikel
|
| 137 |
R & M of socketed ICs
|
|
|
1980
|
20 |
4 |
p. 538-539
2 p.
|
artikel
|
| 138 |
Sample size for selecting most reliable of K normal (lognormal) populations
|
|
|
1980
|
20 |
4 |
p. 539-
1 p.
|
artikel
|
| 139 |
Semiconductor production digest
|
|
|
1980
|
20 |
4 |
p. 537-
1 p.
|
artikel
|
| 140 |
Signature analysis wins new acclaim
|
|
|
1980
|
20 |
4 |
p. 543-
1 p.
|
artikel
|
| 141 |
Simple techniques for making patterns of tin oxide films
|
|
|
1980
|
20 |
4 |
p. 550-
1 p.
|
artikel
|
| 142 |
Simplification of base failure rate models
|
Bora, J.S
|
|
1980
|
20 |
4 |
p. 535-
1 p.
|
artikel
|
| 143 |
Single fault equivalence classes and minimal test sets in combinational networks
|
|
|
1980
|
20 |
4 |
p. 544-
1 p.
|
artikel
|
| 144 |
Software failure modes and effects analysis
|
|
|
1980
|
20 |
4 |
p. 540-541
2 p.
|
artikel
|
| 145 |
Software quality metrics for life-cycle cost-reduction
|
|
|
1980
|
20 |
4 |
p. 541-
1 p.
|
artikel
|
| 146 |
Software reliability model for modular program structure
|
|
|
1980
|
20 |
4 |
p. 542-
1 p.
|
artikel
|
| 147 |
Some problems and possible solutions for hybrid microcircuit reliability
|
|
|
1980
|
20 |
4 |
p. 542-
1 p.
|
artikel
|
| 148 |
Some problems and possible solutions for hybrid microcircuit reliability
|
|
|
1980
|
20 |
4 |
p. 550-
1 p.
|
artikel
|
| 149 |
Spin-on sources for boron and arsenic diffusion
|
|
|
1980
|
20 |
4 |
p. 546-547
2 p.
|
artikel
|
| 150 |
Sputtering system has high yield
|
|
|
1980
|
20 |
4 |
p. 550-
1 p.
|
artikel
|
| 151 |
Stochastic behaviour of a two-unit paralleled system
|
Ohashi, Mamoru
|
|
1980
|
20 |
4 |
p. 471-476
6 p.
|
artikel
|
| 152 |
Stress—strength reliability models
|
Dhillon, Balbir S
|
|
1980
|
20 |
4 |
p. 513-516
4 p.
|
artikel
|
| 153 |
Swirl defects in silicon single crystals
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 154 |
Synthesis of fault trees: an example of noncoherence
|
|
|
1980
|
20 |
4 |
p. 540-
1 p.
|
artikel
|
| 155 |
Taking the heat off semiconductor temperature testing
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 156 |
The applicability of acoustic emission as a non-destructive test for hybrid microelectronic circuits
|
|
|
1980
|
20 |
4 |
p. 551-
1 p.
|
artikel
|
| 157 |
The efficient manipulation of Boolean logic
|
|
|
1980
|
20 |
4 |
p. 538-539
2 p.
|
artikel
|
| 158 |
The new microelectronic processing technology: a review of the state-of-the-art
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 159 |
Thermal stress analysis of composite encapsulants with a spherical adhesive interface
|
Jordan, A.S
|
|
1980
|
20 |
4 |
p. 495-499
5 p.
|
artikel
|
| 160 |
Thick-film heads print 8 dots/mm
|
|
|
1980
|
20 |
4 |
p. 551-
1 p.
|
artikel
|
| 161 |
Thin-film devices on silicon chip withstand up to 500°C
|
|
|
1980
|
20 |
4 |
p. 551-
1 p.
|
artikel
|
| 162 |
Time-dependent error-detection rate model for software reliability and other performance measures
|
|
|
1980
|
20 |
4 |
p. 541-
1 p.
|
artikel
|
| 163 |
Time resolved photoluminescence near the “band gap” in amorphous silicon
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 164 |
Topological and experimental analysis of stationary behaviour of transferred-electron devices with nonuniform geometry
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 165 |
Tracking performance of film resistors: Definitions and theory
|
van Nie, A.G
|
|
1980
|
20 |
4 |
p. 505-508
4 p.
|
artikel
|
| 166 |
Treatment of dependencies in reliability analyses
|
|
|
1980
|
20 |
4 |
p. 538-539
2 p.
|
artikel
|
| 167 |
Two-chip data-encryption unit supports multi-key systems
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 168 |
Ultraviolet photoelectron investigation of Si(111) Au interface at high temperatures. I
|
|
|
1980
|
20 |
4 |
p. 548-
1 p.
|
artikel
|
| 169 |
Update of lapp-powers fault-tree synthesis algorithm
|
|
|
1980
|
20 |
4 |
p. 539-540
2 p.
|
artikel
|
| 170 |
Using certified test records
|
|
|
1980
|
20 |
4 |
p. 543-
1 p.
|
artikel
|
| 171 |
Validity of execution-time theory of software reliability
|
|
|
1980
|
20 |
4 |
p. 541-542
2 p.
|
artikel
|
| 172 |
Velocity of surface carriers in inversion layers on silicon
|
|
|
1980
|
20 |
4 |
p. 549-
1 p.
|
artikel
|
| 173 |
Versatile LSI frequency synthesiser system
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 174 |
Very-high-speed silicon-on-sapphire integrated circuits
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 175 |
VHSIC finally gets untracked
|
|
|
1980
|
20 |
4 |
p. 545-
1 p.
|
artikel
|
| 176 |
V-MOS outstrips bipolar for power
|
|
|
1980
|
20 |
4 |
p. 547-
1 p.
|
artikel
|
| 177 |
Xe+ ion beam cratering of Cu-Al thin film multistructure
|
|
|
1980
|
20 |
4 |
p. 552-
1 p.
|
artikel
|
| 178 |
X-ray lithography unit gains speed by printing six wafers at a time
|
|
|
1980
|
20 |
4 |
p. 546-
1 p.
|
artikel
|
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