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                             178 results found
no title author magazine year volume issue page(s) type
1 A computerized LCC/ORLA methodology 1980
 20 4 p. 539-
1 p.
 article
2 A computer method for fault detection in combinational circuits 1980
 20 4 p. 543-
1 p.
 article
3 Advances in projection microlithography 1980
 20 4 p. 546-
1 p.
 article
4 A fault tree approach to quality control by variables 1980
 20 4 p. 544-
1 p.
 article
5 Aluminum and aluminum alloy sputter deposition for VLSI 1980
 20 4 p. 546-
1 p.
 article
6 A method for the determination of the stress in, and Young's modulus of silicon nitride passivation layers 1980
 20 4 p. 549-
1 p.
 article
7 Analysis of a digital PSK modulator Bozic, S.M
 1980
 20 4 p. 509-512
4 p.
 article
8 An approach to computer aided design of multilayer hybrids Part I 1980
 20 4 p. 550-
1 p.
 article
9 An availability calculation for k-out-of-N redundant system with common-cause failures and replacement Chung, Who Kee
 1980
 20 4 p. 517-519
3 p.
 article
10 An efficient bottom-up algorithm for enumerating minimal cut sets of fault trees 1980
 20 4 p. 543-
1 p.
 article
11 A new approach to high volume hermetic hybrid packaging 1980
 20 4 p. 551-
1 p.
 article
12 An improved interconnection technique Singh, Awater
 1980
 20 4 p. 447-448
2 p.
 article
13 An optical pattern generator for large area devices and direct wafer stepping 1980
 20 4 p. 546-
1 p.
 article
14 AN/UYK-20 computer production reliability test 1980
 20 4 p. 539-
1 p.
 article
15 Application and reliability of copper plated through hole printed wiring boards 1980
 20 4 p. 537-
1 p.
 article
16 Application of program graphs and complexity analysis to software development and testing 1980
 20 4 p. 541-
1 p.
 article
17 Application of the theory of sets to the problem of the localisation of faults in electronic circuits 1980
 20 4 p. 542-543
2 p.
 article
18 Applications of auger and photoelectron spectroscopy in characterizing IC materials 1980
 20 4 p. 545-
1 p.
 article
19 Applications of the scanning electron microscope EBIC mode to semiconductor device evaluation and failure analysis 1980
 20 4 p. 538-
1 p.
 article
20 Apportionment of overall system reliability among subsystems 1980
 20 4 p. 543-
1 p.
 article
21 Approximate calculation of inspection policy with weibull failure times 1980
 20 4 p. 544-
1 p.
 article
22 A quick method for calculating temperatures arising from the rear cooled heat source geometries found in micro-electronics 1980
 20 4 p. 545-
1 p.
 article
23 A reliability growth management approach 1980
 20 4 p. 538-539
2 p.
 article
24 A simple event-definition notation and associated computer programs 1980
 20 4 p. 544-
1 p.
 article
25 Asymptotic distribution of a standby system with delayed repair 1980
 20 4 p. 541-
1 p.
 article
26 A thin-film transistor with polytetrafluoroethylene as insulator 1980
 20 4 p. 550-
1 p.
 article
27 A thomas-fermi description of the screening around the vacancy in silicon: charge state dependence 1980
 20 4 p. 548-
1 p.
 article
28 A two-unit parallel redundant system with bivariate exponential lifetimes Osaki, Shunji
 1980
 20 4 p. 521-523
3 p.
 article
29 Automated parametric testing of ECL and CML devices 1980
 20 4 p. 544-
1 p.
 article
30 Availability analysis of two-unit warm standby system with inspection time Adachi, Kouichi
 1980
 20 4 p. 449-455
7 p.
 article
31 Availability of a redundant system with replacement and repair 1980
 20 4 p. 540-
1 p.
 article
32 Availability of networks subject to scheduled-maintenance 1980
 20 4 p. 540-
1 p.
 article
33 14-bit s-d converter gets smaller 1980
 20 4 p. 548-
1 p.
 article
34 Calculation of system reliability by algebraic manipulation of probability expressions 1980
 20 4 p. 543-
1 p.
 article
35 Calendar of international conferences, symposia, lectures and meetings of interest 1980
 20 4 p. 393-395
3 p.
 article
36 Characterization on phosphorus implanted low pressure chemical vapor deposited polycrystalline silicon 1980
 20 4 p. 550-
1 p.
 article
37 Charge build-up in mos system under ionizing radiation Srivastava, Swaraj
 1980
 20 4 p. 529-531
3 p.
 article
38 Charge neutrality and the internal electric field produced by impurity diffusion 1980
 20 4 p. 549-
1 p.
 article
39 Chip market overestimated, says ITT 1980
 20 4 p. 545-
1 p.
 article
40 CMOS, present and future 1980
 20 4 p. 545-
1 p.
 article
41 Comments on the Lapp-Powers “computer-aided synthesis of fault trees” 1980
 20 4 p. 540-
1 p.
 article
42 Component failure cost 1980
 20 4 p. 537-
1 p.
 article
43 Comprehensive test patterns with modular test structures: The 2 by N probe-pad array approach 1980
 20 4 p. 546-
1 p.
 article
44 Computer simulation of system testing strategies for fault elimination 1980
 20 4 p. 543-
1 p.
 article
45 Considerations in R & M program optimization 1980
 20 4 p. 539-
1 p.
 article
46 Correcting errors digitally in data acquisition and control 1980
 20 4 p. 547-
1 p.
 article
47 Cost effective testing of microprocessor components on general purpose LSI test systems 1980
 20 4 p. 542-
1 p.
 article
48 Cost optimization subject to availability constraints 1980
 20 4 p. 538-539
2 p.
 article
49 CVD films for interlayer dielectrics 1980
 20 4 p. 551-
1 p.
 article
50 Dependence of the saturation intensity of p-type germanium on impurity concentration and residual absorption at 10.59 μm 1980
 20 4 p. 548-
1 p.
 article
51 Description and use of electron beam accessed memory systems 1980
 20 4 p. 552-
1 p.
 article
52 Determination of existing stress in silicon films on sapphire substrate using raman spectroscopy 1980
 20 4 p. 549-
1 p.
 article
53 Development system lays basis for fully integrated VLSI design center 1980
 20 4 p. 547-
1 p.
 article
54 Discrete-time ordering policies 1980
 20 4 p. 544-
1 p.
 article
55 Effects of optical beam size on diffusion length measured by the surface photo-voltage method 1980
 20 4 p. 546-
1 p.
 article
56 Empirical validation of three software error prediction models 1980
 20 4 p. 541-
1 p.
 article
57 Enumeration of all simple paths in a communication network Misra, R.B
 1980
 20 4 p. 419-426
8 p.
 article
58 Epitaxial process is highly selective in depositing silicon 1980
 20 4 p. 546-
1 p.
 article
59 Evaluating single point failures for safety and reliability 1980
 20 4 p. 541-
1 p.
 article
60 Evaluating the KTI Monte Carlo method for system reliability calculations 1980
 20 4 p. 544-
1 p.
 article
61 Event-altered rate models for general reliability analysis 1980
 20 4 p. 544-
1 p.
 article
62 Fabrication of a six level multilayer structure 1980
 20 4 p. 551-
1 p.
 article
63 Fault-tolerant software 1980
 20 4 p. 541-
1 p.
 article
64 Fault trees and discrete probability spaces Joller, J.M
 1980
 20 4 p. 435-445
11 p.
 article
65 Four-chip hybrid carrier holds down system costs 1980
 20 4 p. 545-
1 p.
 article
66 Future microelectronic devices: materials aspects and interfacial phenomena 1980
 20 4 p. 545-
1 p.
 article
67 Good bits swapped for bad in 64-kilobit E-PROM 1980
 20 4 p. 547-
1 p.
 article
68 Graphical analysis of repairable systems 1980
 20 4 p. 540-
1 p.
 article
69 High threshold voltages in small geometry mos transistors due to edge contamination Nevin, Joseph H
 1980
 20 4 p. 457-463
7 p.
 article
70 High voltage stable resistors on multilayer dielectric 1980
 20 4 p. 550-
1 p.
 article
71 How Japanese manufacturers achieve high IC reliability 1980
 20 4 p. 537-
1 p.
 article
72 IC controls loudness of TV sound channel 1980
 20 4 p. 547-
1 p.
 article
73 IC makers ponder polysilicon shortage predicted by year's end 1980
 20 4 p. 545-
1 p.
 article
74 ILPOS—a programme system for the computer-aided coarse layout design of I2L-circuits 1980
 20 4 p. 545-546
2 p.
 article
75 Improved software reliability through requirements verification 1980
 20 4 p. 540-
1 p.
 article
76 Improved technique for decapsulation of epoxy-packaged semiconductor devices and microcircuits 1980
 20 4 p. 537-538
2 p.
 article
77 Improving system safety through risk assessment 1980
 20 4 p. 539-
1 p.
 article
78 Impurity-assisted intervalley scattering in uniaxially stressed silicon 1980
 20 4 p. 549-
1 p.
 article
79 Impurity interaction and the donor-acceptor recombination in semiconductors 1980
 20 4 p. 548-549
2 p.
 article
80 Indefinite immittance matrices of a five-layer circular geometry thin-film integrated structure Khan, M.J.R
 1980
 20 4 p. 501-504
4 p.
 article
81 Influence of the growth parameters in GaAs vapour phase epitaxy 1980
 20 4 p. 548-
1 p.
 article
82 Interpretation of C-V measurements for determining the doping profile in semiconductors 1980
 20 4 p. 550-
1 p.
 article
83 Introduction to chemical vapor deposition 1980
 20 4 p. 549-
1 p.
 article
84 Inverting and minimizing Boolean functions, minimal paths and minimal cuts: noncoherent system analysis 1980
 20 4 p. 543-544
2 p.
 article
85 Investigation of Ar ion implant gettering of gold in silicon by m.o.s. and Rutherford backscattering techniques 1980
 20 4 p. 552-
1 p.
 article
86 Isoplanar-S scales down for new heights in performance 1980
 20 4 p. 547-
1 p.
 article
87 Justifying burn-in—an analysis 1980
 20 4 p. 542-
1 p.
 article
88 Limits of models in reliability engineering 1980
 20 4 p. 539-
1 p.
 article
89 Lithography system adds second E beam for accurate positioning 1980
 20 4 p. 546-
1 p.
 article
90 LSI processor mirror high-performance minicomputer 1980
 20 4 p. 547-
1 p.
 article
91 Magnetron sputtered titanium-tungsten films 1980
 20 4 p. 551-
1 p.
 article
92 Markov analyses of nuclear plant failure dependencies 1980
 20 4 p. 539-
1 p.
 article
93 Mask making for a custom VLSI design house 1980
 20 4 p. 546-
1 p.
 article
94 Memory finds and fixes errors to raise reliability of microcomputer 1980
 20 4 p. 543-
1 p.
 article
95 Microcrack detection in silicon crystals with an ultrasonic sonoprobe 1980
 20 4 p. 547-
1 p.
 article
96 Microprocessor adds flexibility to television control system 1980
 20 4 p. 547-
1 p.
 article
97 Millimeter-wave ICs spring from the lab 1980
 20 4 p. 547-
1 p.
 article
98 Modern analytical techniques for failure analysis 1980
 20 4 p. 541-
1 p.
 article
99 Monolithic d-a converter operates on single supply 1980
 20 4 p. 547-
1 p.
 article
100 Mosfets with low threshold value Singh, A
 1980
 20 4 p. 533-534
2 p.
 article
101 Multi-state device redundant systems with common-cause failures and one standby unit Dhillon, Balbir S
 1980
 20 4 p. 411-417
7 p.
 article
102 Non-destructive examination of eutectic die-bonds in high power silicon devices using air-coupled ultrasound 1980
 20 4 p. 538-539
2 p.
 article
103 10-ns monolithic d-a converter keeps bipolar drive circuits hustling 1980
 20 4 p. 547-
1 p.
 article
104 Observation of lifetime controlling recombination centres in silicon power devices 1980
 20 4 p. 548-
1 p.
 article
105 Ohmic contacts in GaAs 1980
 20 4 p. 548-
1 p.
 article
106 On a series parallel system Subramanian, R
 1980
 20 4 p. 525-527
3 p.
 article
107 On program testing issues in software reliability—A survey Soi, Inder M
 1980
 20 4 p. 483-488
6 p.
 article
108 On the behaviour of buried oxygen implanted layers in highly doped GaAs 1980
 20 4 p. 549-
1 p.
 article
109 Optimal periodic maintenance policy for machines subject to deterioration and random breakdown 1980
 20 4 p. 544-
1 p.
 article
110 Optimal scheduled-maintenance policy based on multiplecriteria decision-making 1980
 20 4 p. 543-
1 p.
 article
111 Optimal time intervals for testing hypotheses on computer software errors 1980
 20 4 p. 541-
1 p.
 article
112 Optimum policies when preventive maintenance is imperfect 1980
 20 4 p. 545-
1 p.
 article
113 Optimum policy of one-unit system with two types of maintenance and minimal repair Adachi, Kouichi
 1980
 20 4 p. 489-493
5 p.
 article
114 Package piggybacks standard E-PROM to emulate one-chip microcomputer 1980
 20 4 p. 548-
1 p.
 article
115 Parametric methods in the analysis of survival data Gross, Alan J
 1980
 20 4 p. 477-481
5 p.
 article
116 Partial RAMs can fill today's memory boards 1980
 20 4 p. 547-
1 p.
 article
117 P2C-MOS microcomputer family attains n-MOS performance 1980
 20 4 p. 547-
1 p.
 article
118 Peripheral controller turns to 12L 1980
 20 4 p. 548-
1 p.
 article
119 Pinhole elimination in hard masks 1980
 20 4 p. 546-
1 p.
 article
120 Positron annihilation in boron-implanted N-type silicon 1980
 20 4 p. 549-
1 p.
 article
121 Practical cleaning procedures for vacuum deposition equipment 1980
 20 4 p. 551-
1 p.
 article
122 Preliminary studies of a thick film hybrid base coupled logic (BCL) circuit 1980
 20 4 p. 551-
1 p.
 article
123 Preparation for LCC proposals and contracts 1980
 20 4 p. 540-
1 p.
 article
124 Processing latitude in photoresist patterning 1980
 20 4 p. 547-
1 p.
 article
125 Publications, notices, calls for papers, etc. 1980
 20 4 p. 397-409
13 p.
 article
126 Quality improvement through quality progress 1980
 20 4 p. 538-539
2 p.
 article
127 Quantitative specification evaluation 1980
 20 4 p. 544-
1 p.
 article
128 Random faults in semiconductor storage equipment 1980
 20 4 p. 544-
1 p.
 article
129 Regulatory cost management and product assurance 1980
 20 4 p. 539-
1 p.
 article
130 Reliability analysis of 3-state systems 1980
 20 4 p. 543-
1 p.
 article
131 Reliability described by belief functions 1980
 20 4 p. 539-
1 p.
 article
132 Reliability evaluation of computer programs Suri, P.K
 1980
 20 4 p. 465-470
6 p.
 article
133 Reliability is in eye of beholder 1980
 20 4 p. 537-
1 p.
 article
134 Reliable thyristors and triacs in TO-220 plastic packages. P. Blunt 1980
 20 4 p. 538-539
2 p.
 article
135 Repair priority effect on availability of a 2-unit system 1980
 20 4 p. 542-
1 p.
 article
136 Replacement models with inspection and preventive maintenance Nakagawa, T
 1980
 20 4 p. 427-433
7 p.
 article
137 R & M of socketed ICs 1980
 20 4 p. 538-539
2 p.
 article
138 Sample size for selecting most reliable of K normal (lognormal) populations 1980
 20 4 p. 539-
1 p.
 article
139 Semiconductor production digest 1980
 20 4 p. 537-
1 p.
 article
140 Signature analysis wins new acclaim 1980
 20 4 p. 543-
1 p.
 article
141 Simple techniques for making patterns of tin oxide films 1980
 20 4 p. 550-
1 p.
 article
142 Simplification of base failure rate models Bora, J.S
 1980
 20 4 p. 535-
1 p.
 article
143 Single fault equivalence classes and minimal test sets in combinational networks 1980
 20 4 p. 544-
1 p.
 article
144 Software failure modes and effects analysis 1980
 20 4 p. 540-541
2 p.
 article
145 Software quality metrics for life-cycle cost-reduction 1980
 20 4 p. 541-
1 p.
 article
146 Software reliability model for modular program structure 1980
 20 4 p. 542-
1 p.
 article
147 Some problems and possible solutions for hybrid microcircuit reliability 1980
 20 4 p. 542-
1 p.
 article
148 Some problems and possible solutions for hybrid microcircuit reliability 1980
 20 4 p. 550-
1 p.
 article
149 Spin-on sources for boron and arsenic diffusion 1980
 20 4 p. 546-547
2 p.
 article
150 Sputtering system has high yield 1980
 20 4 p. 550-
1 p.
 article
151 Stochastic behaviour of a two-unit paralleled system Ohashi, Mamoru
 1980
 20 4 p. 471-476
6 p.
 article
152 Stress—strength reliability models Dhillon, Balbir S
 1980
 20 4 p. 513-516
4 p.
 article
153 Swirl defects in silicon single crystals 1980
 20 4 p. 548-
1 p.
 article
154 Synthesis of fault trees: an example of noncoherence 1980
 20 4 p. 540-
1 p.
 article
155 Taking the heat off semiconductor temperature testing 1980
 20 4 p. 545-
1 p.
 article
156 The applicability of acoustic emission as a non-destructive test for hybrid microelectronic circuits 1980
 20 4 p. 551-
1 p.
 article
157 The efficient manipulation of Boolean logic 1980
 20 4 p. 538-539
2 p.
 article
158 The new microelectronic processing technology: a review of the state-of-the-art 1980
 20 4 p. 545-
1 p.
 article
159 Thermal stress analysis of composite encapsulants with a spherical adhesive interface Jordan, A.S
 1980
 20 4 p. 495-499
5 p.
 article
160 Thick-film heads print 8 dots/mm 1980
 20 4 p. 551-
1 p.
 article
161 Thin-film devices on silicon chip withstand up to 500°C 1980
 20 4 p. 551-
1 p.
 article
162 Time-dependent error-detection rate model for software reliability and other performance measures 1980
 20 4 p. 541-
1 p.
 article
163 Time resolved photoluminescence near the “band gap” in amorphous silicon 1980
 20 4 p. 548-
1 p.
 article
164 Topological and experimental analysis of stationary behaviour of transferred-electron devices with nonuniform geometry 1980
 20 4 p. 548-
1 p.
 article
165 Tracking performance of film resistors: Definitions and theory van Nie, A.G
 1980
 20 4 p. 505-508
4 p.
 article
166 Treatment of dependencies in reliability analyses 1980
 20 4 p. 538-539
2 p.
 article
167 Two-chip data-encryption unit supports multi-key systems 1980
 20 4 p. 547-
1 p.
 article
168 Ultraviolet photoelectron investigation of Si(111) Au interface at high temperatures. I 1980
 20 4 p. 548-
1 p.
 article
169 Update of lapp-powers fault-tree synthesis algorithm 1980
 20 4 p. 539-540
2 p.
 article
170 Using certified test records 1980
 20 4 p. 543-
1 p.
 article
171 Validity of execution-time theory of software reliability 1980
 20 4 p. 541-542
2 p.
 article
172 Velocity of surface carriers in inversion layers on silicon 1980
 20 4 p. 549-
1 p.
 article
173 Versatile LSI frequency synthesiser system 1980
 20 4 p. 547-
1 p.
 article
174 Very-high-speed silicon-on-sapphire integrated circuits 1980
 20 4 p. 547-
1 p.
 article
175 VHSIC finally gets untracked 1980
 20 4 p. 545-
1 p.
 article
176 V-MOS outstrips bipolar for power 1980
 20 4 p. 547-
1 p.
 article
177 Xe+ ion beam cratering of Cu-Al thin film multistructure 1980
 20 4 p. 552-
1 p.
 article
178 X-ray lithography unit gains speed by printing six wafers at a time 1980
 20 4 p. 546-
1 p.
 article
                             178 results found
 
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