no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Absolute quantitative time resolved voltage measurements on 1 μm conducting lines of integrated circuits via electric force microscope-(EFM-) testing
|
Bangert, J. |
|
1997 |
100-101 |
10-11 |
p. 1579-1582 4 p. |
article |
2 |
Activation of parasitic bipolar transistor during reverse recovery of MOSFET's intrinsic diode
|
Busatto, G. |
|
1997 |
100-101 |
10-11 |
p. 1507-1510 4 p. |
article |
3 |
A high resolution method for measuring hot carrier degradation in matched transistor pairs
|
Dreesen, R. |
|
1997 |
100-101 |
10-11 |
p. 1533-1536 4 p. |
article |
4 |
A laser beam method for evaluation of thermal time constant in smart power devices
|
Seliger, N. |
|
1997 |
100-101 |
10-11 |
p. 1727-1730 4 p. |
article |
5 |
Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization
|
Labat, N. |
|
1997 |
100-101 |
10-11 |
p. 1675-1678 4 p. |
article |
6 |
Analysis of the evolution of the trapped charge distributions in 10nm SiO2 films during DC and bipolar dynamic stress
|
Rodriguez, R. |
|
1997 |
100-101 |
10-11 |
p. 1517-1520 4 p. |
article |
7 |
An automatic adaptation method for heterojunction bipolar transistor dynamic test
|
Gauffre, S. |
|
1997 |
100-101 |
10-11 |
p. 1695-1698 4 p. |
article |
8 |
A new reliability prediction model for telecommunication hardware
|
Nilsson, Mattias |
|
1997 |
100-101 |
10-11 |
p. 1429-1432 4 p. |
article |
9 |
An investigation into electrical parameter settling times of GaAs FETs and MMICs
|
Coppel, F. |
|
1997 |
100-101 |
10-11 |
p. 1687-1690 4 p. |
article |
10 |
An on-wafer test structure to measure the effect of thermally-induced stress on silicon devices
|
Haddab, Y. |
|
1997 |
100-101 |
10-11 |
p. 1441-1444 4 p. |
article |
11 |
An other way to assess electronics part reliability
|
Charpenel, P. |
|
1997 |
100-101 |
10-11 |
p. 1449-1452 4 p. |
article |
12 |
Applications of scanning electrical force microscopy
|
Müller, F. |
|
1997 |
100-101 |
10-11 |
p. 1631-1634 4 p. |
article |
13 |
Are high resolution resistometric methods really useful for the early detection of electromigration damage?
|
Scorzoni, A. |
|
1997 |
100-101 |
10-11 |
p. 1479-1482 4 p. |
article |
14 |
A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy
|
de Wolf, I. |
|
1997 |
100-101 |
10-11 |
p. 1591-1594 4 p. |
article |
15 |
A study of the thermal-electrical- and mechanical influence on degradation in an aluminum-pad structure
|
Yu, X. |
|
1997 |
100-101 |
10-11 |
p. 1545-1548 4 p. |
article |
16 |
Author index
|
|
|
1997 |
100-101 |
10-11 |
p. I-II nvt p. |
article |
17 |
Automated placement of testing pads for electron-beam observation
|
Kuji, Norio |
|
1997 |
100-101 |
10-11 |
p. 1565-1568 4 p. |
article |
18 |
Bias stress reliability of Be-, Zn- and C-doped base microwave HBTs
|
Rezazadeh, A.A. |
|
1997 |
100-101 |
10-11 |
p. 1703-1706 4 p. |
article |
19 |
Bias temperature reliability of p-channel high-voltage devices
|
Demesmaeker, A. |
|
1997 |
100-101 |
10-11 |
p. 1767-1770 4 p. |
article |
20 |
Building-in reliability during library development: Hot-carrier degradation is no longer a problem of the technologists only!
|
Bellens, R. |
|
1997 |
100-101 |
10-11 |
p. 1425-1428 4 p. |
article |
21 |
Characterisation of degradation mechanisms in resonant tunnelling diodes
|
Vogt, A. |
|
1997 |
100-101 |
10-11 |
p. 1691-1694 4 p. |
article |
22 |
Characteristics of intrinsic breakdown of thin reoxidized nitride for trench capacitors
|
Wu, E. |
|
1997 |
100-101 |
10-11 |
p. 1511-1516 6 p. |
article |
23 |
Characterization of thermal device properties with nanometer resolution
|
Cramer, R.M. |
|
1997 |
100-101 |
10-11 |
p. 1583-1586 4 p. |
article |
24 |
Comments on the utilization of noise measurements for the characterization of electromigration in metal lines
|
Ciofi, C. |
|
1997 |
100-101 |
10-11 |
p. 1607-1610 4 p. |
article |
25 |
Comparison of different on-chip ESD protection structures in a 0.35 μm CMOS technology
|
Richier, C. |
|
1997 |
100-101 |
10-11 |
p. 1537-1540 4 p. |
article |
26 |
Computer-based training for failure analysis
|
Henderson, C. |
|
1997 |
100-101 |
10-11 |
p. 1445-1448 4 p. |
article |
27 |
Cosmic ray induced failures in high power semiconductor devices
|
Zeller, H.R. |
|
1997 |
100-101 |
10-11 |
p. 1711-1718 8 p. |
article |
28 |
Dangerous parasitics of socketed CDM ESD testers
|
Gossner, H. |
|
1997 |
100-101 |
10-11 |
p. 1465-1468 4 p. |
article |
29 |
Development of “kink” in the output I–V characteristics of pseudomorphic hemt's after hot-electron accelerated testing
|
Meneghesso, G. |
|
1997 |
100-101 |
10-11 |
p. 1679-1682 4 p. |
article |
30 |
Diagnostic technique for projecting gate oxide reliability and device reliability
|
Park, Jong T. |
|
1997 |
100-101 |
10-11 |
p. 1421-1424 4 p. |
article |
31 |
Dielectric reliability in deep-submicron technologies: From thin to ultrathin oxides
|
Vincent, E. |
|
1997 |
100-101 |
10-11 |
p. 1499-1506 8 p. |
article |
32 |
Dielectric testing for integrated power devices
|
Oussalah, S. |
|
1997 |
100-101 |
10-11 |
p. 1763-1766 4 p. |
article |
33 |
Direct parameter extraction for hot-carrier reliability simulation
|
Minehane, S. |
|
1997 |
100-101 |
10-11 |
p. 1437-1440 4 p. |
article |
34 |
Dual phase probing technique for IC-internal failure analysis
|
Görlich, S. |
|
1997 |
100-101 |
10-11 |
p. 1569-1574 6 p. |
article |
35 |
Early resistance change and stress/electromigration modeling in aluminum interconnects
|
Petrescu, V. |
|
1997 |
100-101 |
10-11 |
p. 1491-1494 4 p. |
article |
36 |
Editorial
|
Labat, Nathalie |
|
1997 |
100-101 |
10-11 |
p. ix-x nvt p. |
article |
37 |
Effect of tip shape in the design of long distance electrostatic force microscopy
|
Belaidi, S. |
|
1997 |
100-101 |
10-11 |
p. 1627-1630 4 p. |
article |
38 |
Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions
|
Hamidi, A. |
|
1997 |
100-101 |
10-11 |
p. 1755-1758 4 p. |
article |
39 |
Effects of ESD protections on latch-up sensitivity of CMOS 4-stripe structures
|
Pavan, P. |
|
1997 |
100-101 |
10-11 |
p. 1561-1564 4 p. |
article |
40 |
ESD characteristics of a lateral NPN protection device in epitaxial and non-epitaxial substrates
|
Suzuki, Teruo |
|
1997 |
100-101 |
10-11 |
p. 1453-1456 4 p. |
article |
41 |
Evaluation of stresses in packaged ICs by In situ measurements with an assembly test chip and simulation
|
Ducos, C. |
|
1997 |
100-101 |
10-11 |
p. 1795-1798 4 p. |
article |
42 |
Experimental analysis and 2D simulation of AlGaAs GaAs HBT base leakage current
|
Maneux, C. |
|
1997 |
100-101 |
10-11 |
p. 1707-1710 4 p. |
article |
43 |
Failure mechanism and SPICE modeling of AlGaAs GaAs HBT long-term current instability
|
Liou, J.J. |
|
1997 |
100-101 |
10-11 |
p. 1643-1650 8 p. |
article |
44 |
Failure mechanisms of GaAs mesfets with Cu/refractory metallized gates
|
Feng, Ting |
|
1997 |
100-101 |
10-11 |
p. 1699-1702 4 p. |
article |
45 |
Finite element method applied to stress simulation of high power 980nm pump lasers
|
Manna, M. |
|
1997 |
100-101 |
10-11 |
p. 1667-1670 4 p. |
article |
46 |
Ga As power mmic: A design methodology for reliability
|
Muraro, J.L. |
|
1997 |
100-101 |
10-11 |
p. 1651-1654 4 p. |
article |
47 |
Gate and circuit level analysis of n-type SRAM reliability failures
|
Symonds, K. |
|
1997 |
100-101 |
10-11 |
p. 1541-1544 4 p. |
article |
48 |
High performance microsystem packaging: A perspective
|
Romig Jr., A.D. |
|
1997 |
100-101 |
10-11 |
p. 1771-1781 11 p. |
article |
49 |
High sensitivity and high resolution differential interferometer: Micrometric polariscope for thermomechanical studies in microelectronics
|
Dilhaire, S. |
|
1997 |
100-101 |
10-11 |
p. 1587-1590 4 p. |
article |
50 |
High-temperature-reverse-bias testing of power VDMOS transistors
|
Tošić, N. |
|
1997 |
100-101 |
10-11 |
p. 1759-1762 4 p. |
article |
51 |
Impact of InP HEMT epilayer designs on side gating effects
|
Berthelemot, C. |
|
1997 |
100-101 |
10-11 |
p. 1683-1686 4 p. |
article |
52 |
Improving the ESD performance of input protection circuits in retrograde well and STI structures
|
Park, Young-Kwan |
|
1997 |
100-101 |
10-11 |
p. 1461-1464 4 p. |
article |
53 |
Influence of ARC capping layer on stress induced voiding in narrow AlCu metallisations
|
Arnaud, L. |
|
1997 |
100-101 |
10-11 |
p. 1487-1490 4 p. |
article |
54 |
Influence of thermal heating effect on pulsed DC electromigration
|
Waltz, P. |
|
1997 |
100-101 |
10-11 |
p. 1553-1556 4 p. |
article |
55 |
In situ ageing, a development of the in situ techniques for building-in-reliability
|
Galateanu, L. |
|
1997 |
100-101 |
10-11 |
p. 1639-1642 4 p. |
article |
56 |
In-situ study of the degradation behaviour of GaAs MESFETs for hi-rel applications
|
Petersen, R. |
|
1997 |
100-101 |
10-11 |
p. 1655-1658 4 p. |
article |
57 |
Investigation of stress induced leakage current in CMOS structures with ultra-thin gate dielectrics
|
Jahan, C. |
|
1997 |
100-101 |
10-11 |
p. 1529-1532 4 p. |
article |
58 |
Investigations of stress distributions in tungsten-filled via structures using finite element analysis
|
Coughlan, J. |
|
1997 |
100-101 |
10-11 |
p. 1549-1552 4 p. |
article |
59 |
Layers decoration on fib cross-sections
|
Perez, Guy |
|
1997 |
100-101 |
10-11 |
p. 1611-1614 4 p. |
article |
60 |
Lifetime prediction for PMOS and NMOS devices based on a degradation model for g ate- b ias- s tress
|
Narr, A. |
|
1997 |
100-101 |
10-11 |
p. 1433-1436 4 p. |
article |
61 |
Low frequency noise characterization of 0.18μm Si CMOS transistors
|
Boutchacha, T. |
|
1997 |
100-101 |
10-11 |
p. 1599-1602 4 p. |
article |
62 |
Mechanical response of solder joints in flip-chip type structures
|
Soper, A. |
|
1997 |
100-101 |
10-11 |
p. 1783-1786 4 p. |
article |
63 |
Micro-extraction spectrometers for voltage contrast in the SEM
|
Dinnis, A.R. |
|
1997 |
100-101 |
10-11 |
p. 1623-1626 4 p. |
article |
64 |
Micromachined structure reliability testing specificity. The Motorola MGS1100 gas sensor example
|
Bosc, J.M. |
|
1997 |
100-101 |
10-11 |
p. 1791-1794 4 p. |
article |
65 |
Microstructural and surface effects on electromigration failure mechanism in Cu interconnects
|
Gladkikh, A. |
|
1997 |
100-101 |
10-11 |
p. 1557-1560 4 p. |
article |
66 |
MMIC in-circuit and in-device testing with an on-wafer high frequency electric force microscope test system
|
Leyk, A. |
|
1997 |
100-101 |
10-11 |
p. 1575-1578 4 p. |
article |
67 |
Modification and application of an emission microscope for continuous wavelength spectroscopy
|
Rasras, M. |
|
1997 |
100-101 |
10-11 |
p. 1595-1598 4 p. |
article |
68 |
New methodology for localizing faults in programmable and commercial circuits
|
Desplats, Romain |
|
1997 |
100-101 |
10-11 |
p. 1619-1622 4 p. |
article |
69 |
New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures
|
Wang-Ratkovic, Janet |
|
1997 |
100-101 |
10-11 |
p. 1747-1754 8 p. |
article |
70 |
Noise and DC characteristics of power silicon diodes
|
Crook, R. |
|
1997 |
100-101 |
10-11 |
p. 1635-1638 4 p. |
article |
71 |
Oxide thickness dependence of nitridation effects on TDDB characteristics
|
Mazumder, M.K. |
|
1997 |
100-101 |
10-11 |
p. 1521-1524 4 p. |
article |
72 |
Reliability challenges for deep submicron interconnects
|
McPherson, J.W. |
|
1997 |
100-101 |
10-11 |
p. 1469-1477 9 p. |
article |
73 |
Reliability issues in 650V high voltage bipolar-CMOS-DMOS integrated circuits
|
van der Pol, Jacob A. |
|
1997 |
100-101 |
10-11 |
p. 1723-1726 4 p. |
article |
74 |
Reliability of smart power devices
|
Murari, B. |
|
1997 |
100-101 |
10-11 |
p. 1735-1742 8 p. |
article |
75 |
Reliability study on three-dimensional Au WSiN interconnections for ultra-compact MMICs
|
Sugahara, Hirohiko |
|
1997 |
100-101 |
10-11 |
p. 1659-1662 4 p. |
article |
76 |
Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs
|
Llinares, P. |
|
1997 |
100-101 |
10-11 |
p. 1603-1606 4 p. |
article |
77 |
SiC-diodes forward surge current failure mechanisms: Experiment and simulation
|
Udal, A. |
|
1997 |
100-101 |
10-11 |
p. 1671-1674 4 p. |
article |
78 |
Substrate-to-base solder joint reliability in high power IGBT modules
|
Herr, E. |
|
1997 |
100-101 |
10-11 |
p. 1719-1722 4 p. |
article |
79 |
Suppressing the parasitic bipolar action of SOI-MOSFETs by using back-side bias-temperature treatment
|
Koizumi, Hiroshi |
|
1997 |
100-101 |
10-11 |
p. 1743-1746 4 p. |
article |
80 |
Temperature and thermal conductivity modes of scanning probe microscopy for electromigration studies
|
Buck, A. |
|
1997 |
100-101 |
10-11 |
p. 1495-1498 4 p. |
article |
81 |
Thermal characterization of IGBT power modules
|
Cova, P. |
|
1997 |
100-101 |
10-11 |
p. 1731-1734 4 p. |
article |
82 |
Thermal simulation and characterisation of the reliability of THz Schottky diodes
|
Brandt, M. |
|
1997 |
100-101 |
10-11 |
p. 1663-1666 4 p. |
article |
83 |
The thermally balanced bridge technique (TBBT): A new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes
|
Van Olmen, J. |
|
1997 |
100-101 |
10-11 |
p. 1483-1486 4 p. |
article |
84 |
Three-dimensional analysis for multilayer wiring in sub-half-micron devices
|
Murata, Naofumi |
|
1997 |
100-101 |
10-11 |
p. 1615-1618 4 p. |
article |
85 |
Transient stressing and characterization of thin tunnel oxides
|
Ciappa, M. |
|
1997 |
100-101 |
10-11 |
p. 1525-1528 4 p. |
article |
86 |
Ultrasonic images interpretation improvement for microassembling technologies characterisation
|
Bechou, L. |
|
1997 |
100-101 |
10-11 |
p. 1787-1790 4 p. |
article |
87 |
Using an SCR as ESD protection without latch-up danger
|
Notermans, Guido |
|
1997 |
100-101 |
10-11 |
p. 1457-1460 4 p. |
article |