| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel
|
Wang, Min
|
|
2014
|
92 |
C |
p. 35-39
5 p.
|
artikel
|
| 2 |
Analytical model for the threshold voltage of III–V nanowire transistors including quantum effects
|
Marin, E.G.
|
|
2014
|
92 |
C |
p. 28-34
7 p.
|
artikel
|
| 3 |
Application, modeling and limitations of Y-function based methods for massive series resistance in nanoscale SOI MOSFETs
|
Karsenty, A.
|
|
2014
|
92 |
C |
p. 12-19
8 p.
|
artikel
|
| 4 |
A scaling scenario of asymmetric coding to reduce both data retention and program disturbance of NAND flash memories
|
Doi, Masafumi
|
|
2014
|
92 |
C |
p. 63-69
7 p.
|
artikel
|
| 5 |
Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET
|
Nguyen Gia, Quan
|
|
2014
|
92 |
C |
p. 20-23
4 p.
|
artikel
|
| 6 |
Device design assessment of 4H–SiC n-IGBT – A simulation study
|
Usman, Muhammad
|
|
2014
|
92 |
C |
p. 5-11
7 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2014
|
92 |
C |
p. IFC-
1 p.
|
artikel
|
| 8 |
Electrical characteristics of Al2O3/TiO2/Al2O3 prepared by atomic layer deposition on (NH4)2S-treated GaAs
|
Yen, Chih-Feng
|
|
2014
|
92 |
C |
p. 1-4
4 p.
|
artikel
|
| 9 |
High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers
|
Wu, Yi-Chen
|
|
2014
|
92 |
C |
p. 52-56
5 p.
|
artikel
|
| 10 |
Low rate deep level transient spectroscopy - a powerful tool for defect characterization in wide bandgap semiconductors
|
Schmidt, Florian
|
|
2014
|
92 |
C |
p. 40-46
7 p.
|
artikel
|
| 11 |
Performance optimization for the sub-22nm fully depleted SOI nanowire transistors
|
Chen, Chun-Yu
|
|
2014
|
92 |
C |
p. 57-62
6 p.
|
artikel
|
| 12 |
Resistive switching in lateral junctions with nanometer separated electrodes
|
Ziegler, Martin
|
|
2014
|
92 |
C |
p. 24-27
4 p.
|
artikel
|
| 13 |
ZnO based UV detectors with Surface Plasmon Polariton enhancement on responsivity
|
Li, Gaoming
|
|
2014
|
92 |
C |
p. 47-51
5 p.
|
artikel
|
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