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                                       Details for article 5 of 13 found articles
 
 
  Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET
 
 
Title: Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET
Author: Nguyen Gia, Quan
Yoo, Sung-Won
Lee, Hyunseul
Shin, Hyungcheol
Appeared in: Solid-state electronics
Paging: Volume 92 (2014) nr. C pages 4 p.
Year: 2014
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 13 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands