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                             16 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Analysis of three different junction temperature estimation methods for AC LEDs Jayawardena, Asiri
2013
86 C p. 11-16
6 p.
artikel
2 Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors Tanaka, Chika
2013
86 C p. 27-31
5 p.
artikel
3 An embedded nonvolatile memory cell with spacer floating gate for power management integrated circuit applications Na, Kee-Yeol
2013
86 C p. 32-35
4 p.
artikel
4 A physically-derived nonquasi-static model of ferroelectric amplifiers for computer-aided device simulation – Part II: The ferroelectric common-source and common-gate amplifiers Sayyah, Rana
2013
86 C p. 58-63
6 p.
artikel
5 A physically-derived nonquasi-static model of ferroelectric amplifiers for computer-aided device simulation – Part I: The ferroelectric common-drain amplifier Sayyah, Rana
2013
86 C p. 51-57
7 p.
artikel
6 3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate Oh, Jae-Sub
2013
86 C p. 6-10
5 p.
artikel
7 Editorial Board 2013
86 C p. IFC-
1 p.
artikel
8 Electrical characterization of Schottky contacts to N-polar GaN Downey, B.P.
2013
86 C p. 17-21
5 p.
artikel
9 Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate Min, K.S.
2013
86 C p. 75-78
4 p.
artikel
10 Precise analytical model for short channel Cylindrical Gate (CylG) Gate-All-Around (GAA) MOSFET Sharma, Dheeraj
2013
86 C p. 68-74
7 p.
artikel
11 P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology Zhang, P.
2013
86 C p. 1-5
5 p.
artikel
12 Simulation and experimental study of 3-step junction termination extension for high-voltage 4H-SiC gate turn-off thyristors Lin, Lei
2013
86 C p. 36-40
5 p.
artikel
13 Spray pyrolysis of ZnO–TFTs utilizing a perfume atomizer Ortel, Marlis
2013
86 C p. 22-26
5 p.
artikel
14 Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors Huang, Xiaoming
2013
86 C p. 41-44
4 p.
artikel
15 Terahertz detection in a slit-grating-gate field-effect-transistor structure Yermolayev, D.M.
2013
86 C p. 64-67
4 p.
artikel
16 Unexpected impact of germanium content in SiGe bulk PMOSFETs Diouf, C.
2013
86 C p. 45-50
6 p.
artikel
                             16 gevonden resultaten
 
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