| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amorphous indium–gallium–zinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model
|
Shih, Tsung-Hsiang
|
|
2012
|
73 |
C |
p. 74-77
4 p.
|
artikel
|
| 2 |
Analytical modelling of size effects on the lateral photoresponse of CMOS photodiodes
|
Blanco-Filgueira, B.
|
|
2012
|
73 |
C |
p. 15-20
6 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
2012
|
73 |
C |
p. IFC-
1 p.
|
artikel
|
| 4 |
Effects of metal spikes on leakage current of high-voltage GaN Schottky barrier diode
|
Ha, Min-Woo
|
|
2012
|
73 |
C |
p. 1-6
6 p.
|
artikel
|
| 5 |
Electrical characteristics of 20-nm junctionless Si nanowire transistors
|
Park, Chan-Hoon
|
|
2012
|
73 |
C |
p. 7-10
4 p.
|
artikel
|
| 6 |
Electrical compact modelling of graphene transistors
|
Frégonèse, Sébastien
|
|
2012
|
73 |
C |
p. 27-31
5 p.
|
artikel
|
| 7 |
Factors for the polarization lifetime in metal–ferroelectric–insulator–semiconductor capacitors
|
Xiao, Y.G.
|
|
2012
|
73 |
C |
p. 84-88
5 p.
|
artikel
|
| 8 |
Gain analysis in photonic crystal lasers using modified complex plane-wave expansion method
|
Takigawa, Shinichi
|
|
2012
|
73 |
C |
p. 37-43
7 p.
|
artikel
|
| 9 |
GaN schottky barrier MOSFET using transparent source/drain electrodes for UV-optoelectronic integration
|
Jung, Byung-Kwon
|
|
2012
|
73 |
C |
p. 78-80
3 p.
|
artikel
|
| 10 |
Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide
|
Cheng, C.H.
|
|
2012
|
73 |
C |
p. 60-63
4 p.
|
artikel
|
| 11 |
Light triggered 4H–SiC thyristors with an etched guard ring assisted JTE
|
Dheilly, Nicolas
|
|
2012
|
73 |
C |
p. 32-36
5 p.
|
artikel
|
| 12 |
Low equivalent oxide thickness of TiO2/GaAs MOS capacitor
|
Yen, Chih-Feng
|
|
2012
|
73 |
C |
p. 56-59
4 p.
|
artikel
|
| 13 |
Physical mechanism of interpoly capacitance reduction in high-voltage stress
|
Habaš, Predrag
|
|
2012
|
73 |
C |
p. 21-26
6 p.
|
artikel
|
| 14 |
Preparation of transparent ZnO thin films and their application in UV sensor devices
|
Panda, S.K.
|
|
2012
|
73 |
C |
p. 44-50
7 p.
|
artikel
|
| 15 |
RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs
|
Martin, Maria J.
|
|
2012
|
73 |
C |
p. 64-73
10 p.
|
artikel
|
| 16 |
The experimental demonstration of the effect similar to electromagnetically induced transparency in the two micro-resonators system
|
Fan, Guofang
|
|
2012
|
73 |
C |
p. 81-83
3 p.
|
artikel
|
| 17 |
Time-dependent device characteristics in InAs/AlSb HEMTs
|
Ho, Han-Chieh
|
|
2012
|
73 |
C |
p. 51-55
5 p.
|
artikel
|
| 18 |
Unipolar resistance switching and abnormal reset behaviors in Pt/CuO/Pt and Cu/CuO/Pt structures
|
Wu, Liang
|
|
2012
|
73 |
C |
p. 11-14
4 p.
|
artikel
|
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