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                             18 results found
no title author magazine year volume issue page(s) type
1 Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region Cortés, I.
 2012
 70 C p. 8-13
6 p.
 article
2 Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs Pavanello, Marcelo Antonio
 2012
 70 C p. 39-43
5 p.
 article
3 An analysis on the ambipolar current in Si double-gate tunnel FETs Hraziia,
 2012
 70 C p. 67-72
6 p.
 article
4 CMOS without doping: Multi-gate silicon-nanowire field-effect-transistors Wessely, F.
 2012
 70 C p. 33-38
6 p.
 article
5 Confinement-induced carrier mobility increase in nanowires by quantization of warped bands Neophytou, Neophytos
 2012
 70 C p. 81-91
11 p.
 article
6 Editorial Board 2012
 70 C p. IFC-
1 p.
 article
7 FinFlash with buried storage ONO layer for flash memory application Chang, Sung-Jae
 2012
 70 C p. 59-66
8 p.
 article
8 Foreword Godoy, Andrés
 2012
 70 C p. 1-2
2 p.
 article
9 Function of the parasitic bipolar transistor in the 40nm PD SOI NMOS device considering the floating body effect Chena, C.H.
 2012
 70 C p. 3-7
5 p.
 article
10 GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics Galeti, M.
 2012
 70 C p. 44-49
6 p.
 article
11 Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique Valenza, M.
 2012
 70 C p. 27-32
6 p.
 article
12 Influence of discrete dopant on quantum transport in silicon nanowire transistors Akhavan, Nima Dehdashti
 2012
 70 C p. 92-100
9 p.
 article
13 LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal properties Lotfi, S.
 2012
 70 C p. 14-19
6 p.
 article
14 Low frequency noise characterization in n-channel FinFETs Talmat, R.
 2012
 70 C p. 20-26
7 p.
 article
15 Quantum simulation of an ultrathin body field-effect transistor with channel imperfections Vyurkov, V.
 2012
 70 C p. 106-113
8 p.
 article
16 Reaching sub-32nm nodes: ET-FDSOI and BOX optimization Sampedro, C.
 2012
 70 C p. 101-105
5 p.
 article
17 Subband engineering in n-type silicon nanowires using strain and confinement Stanojević, Zlatan
 2012
 70 C p. 73-80
8 p.
 article
18 Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit Kilchytska, V.
 2012
 70 C p. 50-58
9 p.
 article
                             18 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands