| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region
|
Cortés, I.
|
|
2012
|
70 |
C |
p. 8-13
6 p.
|
artikel
|
| 2 |
Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs
|
Pavanello, Marcelo Antonio
|
|
2012
|
70 |
C |
p. 39-43
5 p.
|
artikel
|
| 3 |
An analysis on the ambipolar current in Si double-gate tunnel FETs
|
Hraziia,
|
|
2012
|
70 |
C |
p. 67-72
6 p.
|
artikel
|
| 4 |
CMOS without doping: Multi-gate silicon-nanowire field-effect-transistors
|
Wessely, F.
|
|
2012
|
70 |
C |
p. 33-38
6 p.
|
artikel
|
| 5 |
Confinement-induced carrier mobility increase in nanowires by quantization of warped bands
|
Neophytou, Neophytos
|
|
2012
|
70 |
C |
p. 81-91
11 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2012
|
70 |
C |
p. IFC-
1 p.
|
artikel
|
| 7 |
FinFlash with buried storage ONO layer for flash memory application
|
Chang, Sung-Jae
|
|
2012
|
70 |
C |
p. 59-66
8 p.
|
artikel
|
| 8 |
Foreword
|
Godoy, Andrés
|
|
2012
|
70 |
C |
p. 1-2
2 p.
|
artikel
|
| 9 |
Function of the parasitic bipolar transistor in the 40nm PD SOI NMOS device considering the floating body effect
|
Chena, C.H.
|
|
2012
|
70 |
C |
p. 3-7
5 p.
|
artikel
|
| 10 |
GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
|
Galeti, M.
|
|
2012
|
70 |
C |
p. 44-49
6 p.
|
artikel
|
| 11 |
Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique
|
Valenza, M.
|
|
2012
|
70 |
C |
p. 27-32
6 p.
|
artikel
|
| 12 |
Influence of discrete dopant on quantum transport in silicon nanowire transistors
|
Akhavan, Nima Dehdashti
|
|
2012
|
70 |
C |
p. 92-100
9 p.
|
artikel
|
| 13 |
LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal properties
|
Lotfi, S.
|
|
2012
|
70 |
C |
p. 14-19
6 p.
|
artikel
|
| 14 |
Low frequency noise characterization in n-channel FinFETs
|
Talmat, R.
|
|
2012
|
70 |
C |
p. 20-26
7 p.
|
artikel
|
| 15 |
Quantum simulation of an ultrathin body field-effect transistor with channel imperfections
|
Vyurkov, V.
|
|
2012
|
70 |
C |
p. 106-113
8 p.
|
artikel
|
| 16 |
Reaching sub-32nm nodes: ET-FDSOI and BOX optimization
|
Sampedro, C.
|
|
2012
|
70 |
C |
p. 101-105
5 p.
|
artikel
|
| 17 |
Subband engineering in n-type silicon nanowires using strain and confinement
|
Stanojević, Zlatan
|
|
2012
|
70 |
C |
p. 73-80
8 p.
|
artikel
|
| 18 |
Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit
|
Kilchytska, V.
|
|
2012
|
70 |
C |
p. 50-58
9 p.
|
artikel
|
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