| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs
|
Schwarz, Mike
|
|
2012
|
69 |
C |
p. 72-84
13 p.
|
artikel
|
| 2 |
Analytical models for the electric field distributions and breakdown voltage of Triple RESURF SOI LDMOS
|
Hu, Xiarong
|
|
2012
|
69 |
C |
p. 89-93
5 p.
|
artikel
|
| 3 |
Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance–voltage measurements
|
Huang, Sheng-Yao
|
|
2012
|
69 |
C |
p. 11-13
3 p.
|
artikel
|
| 4 |
Carbon nanotubes’ nanocomposite in humidity sensors
|
Shah, Mutabar
|
|
2012
|
69 |
C |
p. 18-21
4 p.
|
artikel
|
| 5 |
Charge transport properties in pentacene films: Evaluation of carrier mobility by different techniques
|
Lucas, B.
|
|
2012
|
69 |
C |
p. 99-103
5 p.
|
artikel
|
| 6 |
3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs
|
Seoane, N.
|
|
2012
|
69 |
C |
p. 43-49
7 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2012
|
69 |
C |
p. IFC-
1 p.
|
artikel
|
| 8 |
Effect of channel dopant uniformity on MOSFET threshold voltage variability
|
Terada, Kazuo
|
|
2012
|
69 |
C |
p. 62-66
5 p.
|
artikel
|
| 9 |
Effect of silicon channel orientation on analog performance of (110) surface pMOSFETs
|
Kang, Ting-Kuo
|
|
2012
|
69 |
C |
p. 104-106
3 p.
|
artikel
|
| 10 |
Exact extraction method of trap densities at insulator interfaces using quasi-static capacitance–voltage characteristics and numerical solutions of physical equations
|
Kimura, Mutsumi
|
|
2012
|
69 |
C |
p. 38-42
5 p.
|
artikel
|
| 11 |
Formulas of 1/f noise in Schottky barrier diodes under reverse bias
|
Park, Chan Hyeong
|
|
2012
|
69 |
C |
p. 85-88
4 p.
|
artikel
|
| 12 |
Hybrid solar cells with an inverted structure: Nanodots incorporated ternary system
|
Fu, Honghong
|
|
2012
|
69 |
C |
p. 50-54
5 p.
|
artikel
|
| 13 |
Location controlled high performance single-grain Ge TFTs on glass substrate
|
Chen, Tao
|
|
2012
|
69 |
C |
p. 94-98
5 p.
|
artikel
|
| 14 |
Low resistive tungsten dual poly-metal gates with multi-diffusion barrier metals in high performance memory devices
|
Sung, Min-Gyu
|
|
2012
|
69 |
C |
p. 22-26
5 p.
|
artikel
|
| 15 |
Modeling the impact of junction angles in tunnel field-effect transistors
|
Kao, Kuo-Hsing
|
|
2012
|
69 |
C |
p. 31-37
7 p.
|
artikel
|
| 16 |
Red- and white-emitting organic light-emitting diodes based on trimetallic dendritic europium (III) complex: Eu3(DBM)9(TMMB)
|
Chen, Lili
|
|
2012
|
69 |
C |
p. 67-71
5 p.
|
artikel
|
| 17 |
Reproduction of columnar grains after laser crystallization from amorphous-Si to poly-Si using crystallization simulator
|
Matsuki, Kuniaki
|
|
2012
|
69 |
C |
p. 4-6
3 p.
|
artikel
|
| 18 |
Self-oscillation in electrochemical transistors: An RLC modeling approach
|
Tu, Deyu
|
|
2012
|
69 |
C |
p. 7-10
4 p.
|
artikel
|
| 19 |
Symmetrical unified compact model of short-channel double-gate MOSFETs
|
Papathanasiou, K.
|
|
2012
|
69 |
C |
p. 55-61
7 p.
|
artikel
|
| 20 |
The enhancement of the deflection effect in InGaN/GaN light-emitting diodes with an ellipsoidal air tunnel
|
Kim, Hyun Kyu
|
|
2012
|
69 |
C |
p. 14-17
4 p.
|
artikel
|
| 21 |
UV irradiation effects on hydrogen sensors based on SnO2 thin films fabricated by the photochemical deposition
|
Ao, Dengbaoleer
|
|
2012
|
69 |
C |
p. 1-3
3 p.
|
artikel
|
| 22 |
ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate
|
Hyung, Gun Woo
|
|
2012
|
69 |
C |
p. 27-30
4 p.
|
artikel
|
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