| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study for quantum transport calculations of nanosized field-effect transistors
|
Jiang, Xiang-Wei
|
|
2012
|
68 |
C |
p. 56-62
7 p.
|
artikel
|
| 2 |
A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen
|
Chowdhury, M.
|
|
2012
|
68 |
C |
p. 1-3
3 p.
|
artikel
|
| 3 |
A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS
|
Ong, S.N.
|
|
2012
|
68 |
C |
p. 32-37
6 p.
|
artikel
|
| 4 |
Characterization of P-channel power trench MOSFETs with polycrystalline silicon germanium gate electrode for faster switching
|
Dikshit, Rohit
|
|
2012
|
68 |
C |
p. 4-7
4 p.
|
artikel
|
| 5 |
Characterization of single-sided gate-to-drain non-overlapped implantation nMOSFETs for multi-functional non-volatile memory applications
|
Jeng, E.S.
|
|
2012
|
68 |
C |
p. 73-79
7 p.
|
artikel
|
| 6 |
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
|
Kawanago, T.
|
|
2012
|
68 |
C |
p. 68-72
5 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2012
|
68 |
C |
p. IFC-
1 p.
|
artikel
|
| 8 |
Effects of applied bias voltage in tunnel junctions with ferroelectric barrier
|
Zhang, L.B.
|
|
2012
|
68 |
C |
p. 8-12
5 p.
|
artikel
|
| 9 |
Energy harvesting from radio frequency propagation using piezoelectric cantilevers
|
Ahmad, Mahmoud Al
|
|
2012
|
68 |
C |
p. 13-17
5 p.
|
artikel
|
| 10 |
Explicit model for the gate tunneling current in double-gate MOSFETs
|
Chaves, Ferney
|
|
2012
|
68 |
C |
p. 93-97
5 p.
|
artikel
|
| 11 |
Growth of Zn doped Cu(In,Ga)Se2 thin films by RF sputtering for solar cell applications
|
Li, Z.Q.
|
|
2012
|
68 |
C |
p. 80-84
5 p.
|
artikel
|
| 12 |
Influence of atomic layer deposition chemistry on high-k dielectrics for charge trapping memories
|
Nikolaou, Nikolaos
|
|
2012
|
68 |
C |
p. 38-47
10 p.
|
artikel
|
| 13 |
InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric
|
Lin, Hsien-Cheng
|
|
2012
|
68 |
C |
p. 27-31
5 p.
|
artikel
|
| 14 |
Investigation of TiO2 on AlGaAs prepared by liquid phase deposition and its application
|
Lee, Kuan-Wei
|
|
2012
|
68 |
C |
p. 85-89
5 p.
|
artikel
|
| 15 |
N-doped ZnO based fast response ultraviolet photoconductive detector
|
Shinde, S.S.
|
|
2012
|
68 |
C |
p. 22-26
5 p.
|
artikel
|
| 16 |
Parasitic capacitance removal of sub-100nm p-MOSFETs using capacitance–voltage measurements
|
Steinke, Daniel R.
|
|
2012
|
68 |
C |
p. 51-55
5 p.
|
artikel
|
| 17 |
Phosphorous passivation of the SiO2/4H–SiC interface
|
Sharma, Y.K.
|
|
2012
|
68 |
C |
p. 103-107
5 p.
|
artikel
|
| 18 |
Photo-controlled molecular growth and electrical performances of a pentacene-based organic transistor with a photo-reactive insulator
|
Bae, Jin-Hyuk
|
|
2012
|
68 |
C |
p. 108-112
5 p.
|
artikel
|
| 19 |
Point defect determination by eliminating frequency dispersion in C–V measurement for AlGaN/GaN heterostructure
|
Li, Liang
|
|
2012
|
68 |
C |
p. 98-102
5 p.
|
artikel
|
| 20 |
Simulation of organic inverter
|
Papadopoulos, N.P.
|
|
2012
|
68 |
C |
p. 18-21
4 p.
|
artikel
|
| 21 |
Thermal analysis of high power LED packages under the alternating current operation
|
Shin, Moo Whan
|
|
2012
|
68 |
C |
p. 48-50
3 p.
|
artikel
|
| 22 |
Thermal effect on the electroluminescence of InGaN/GaN multiquantum-well light-emitting devices
|
Wu, Ya-Fen
|
|
2012
|
68 |
C |
p. 63-67
5 p.
|
artikel
|
| 23 |
Ultraviolet photoresistors based on ZnO thin films grown by P-MBE
|
Liu, F.J.
|
|
2012
|
68 |
C |
p. 90-92
3 p.
|
artikel
|
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