Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
Titel:
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
Auteur:
Kawanago, T. Suzuki, T. Lee, Y. Kakushima, K. Ahmet, P. Tsutsui, K. Nishiyama, A. Sugii, N. Natori, K. Hattori, T. Iwai, H.