| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A highly-compact packaging design for improving the thermal performance of multi-finger InGaP/GaAs collector-up HBTs
|
Tseng, Hsien-Cheng
|
|
2011
|
56 |
1 |
p. 85-88
4 p.
|
artikel
|
| 2 |
AlGaN/GaN hybrid MOS-HEMT analytical mobility model
|
Pérez-Tomás, A.
|
|
2011
|
56 |
1 |
p. 201-206
6 p.
|
artikel
|
| 3 |
A mechanism for asymmetric data writing failure
|
Lee, Myoung Jin
|
|
2011
|
56 |
1 |
p. 211-213
3 p.
|
artikel
|
| 4 |
A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates
|
Satter, Md. Mahbub
|
|
2011
|
56 |
1 |
p. 141-147
7 p.
|
artikel
|
| 5 |
A surface potential based drain current model for asymmetric double gate MOSFETs
|
Dutta, Pradipta
|
|
2011
|
56 |
1 |
p. 148-154
7 p.
|
artikel
|
| 6 |
A unified short-channel compact model for cylindrical surrounding-gate MOSFET
|
Cousin, Bastien
|
|
2011
|
56 |
1 |
p. 40-46
7 p.
|
artikel
|
| 7 |
Channel scaling of hybrid GaN MOS-HEMTs
|
Li, Zhongda
|
|
2011
|
56 |
1 |
p. 111-115
5 p.
|
artikel
|
| 8 |
Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications
|
Ullán, M.
|
|
2011
|
56 |
1 |
p. 179-184
6 p.
|
artikel
|
| 9 |
Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors
|
Lee, Sangwon
|
|
2011
|
56 |
1 |
p. 95-99
5 p.
|
artikel
|
| 10 |
Comprehensive numerical simulation of threshold-voltage transients in nitride memories
|
Mauri, Aurelio
|
|
2011
|
56 |
1 |
p. 23-30
8 p.
|
artikel
|
| 11 |
Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation
|
Kasakawa, Tomohiro
|
|
2011
|
56 |
1 |
p. 207-210
4 p.
|
artikel
|
| 12 |
Direct determination of threshold condition in DG-MOSFETs from the gm /ID curve
|
Cunha, Ana Isabela Araújo
|
|
2011
|
56 |
1 |
p. 89-94
6 p.
|
artikel
|
| 13 |
Dynamic model of AlGaN/GaN HFET for high voltage switching
|
Koudymov, Alexei
|
|
2011
|
56 |
1 |
p. 135-140
6 p.
|
artikel
|
| 14 |
Editorial Board
|
|
|
2011
|
56 |
1 |
p. IFC-
1 p.
|
artikel
|
| 15 |
Effects of 72Ge/74Ge preamorphization combined with sub-keV boron implantation in pMOSFET fabrication
|
Chen, Lu-Chang
|
|
2011
|
56 |
1 |
p. 68-72
5 p.
|
artikel
|
| 16 |
Effects of residual copper selenide on CuInGaSe2 solar cells
|
Hsieh, Tung-Po
|
|
2011
|
56 |
1 |
p. 175-178
4 p.
|
artikel
|
| 17 |
Electrical characteristics of nickel silicide–silicon heterojunction in suspended silicon nanowires
|
Hong, Su Heon
|
|
2011
|
56 |
1 |
p. 130-134
5 p.
|
artikel
|
| 18 |
High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique
|
Kambayashi, Hiroshi
|
|
2011
|
56 |
1 |
p. 163-167
5 p.
|
artikel
|
| 19 |
Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors
|
Kocan, Martin
|
|
2011
|
56 |
1 |
p. 56-59
4 p.
|
artikel
|
| 20 |
Improved performance of mixed single layer top-emission organic light emitting devices using capping layer
|
Wang, Zhaokui
|
|
2011
|
56 |
1 |
p. 155-158
4 p.
|
artikel
|
| 21 |
In-cell adaptive touch technology for a flexible e-paper display
|
Lee, Jong-Kwon
|
|
2011
|
56 |
1 |
p. 159-162
4 p.
|
artikel
|
| 22 |
Investigation of GaN-based light-emitting diodes using double photonic crystal patterns
|
Huang, H.W.
|
|
2011
|
56 |
1 |
p. 31-34
4 p.
|
artikel
|
| 23 |
Leakage current mechanisms in sub-50nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes
|
Chung, Eun-Ae
|
|
2011
|
56 |
1 |
p. 219-222
4 p.
|
artikel
|
| 24 |
Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of ‹111› and ‹100› crystal orientation at high electric fields
|
Becker, Julian
|
|
2011
|
56 |
1 |
p. 104-110
7 p.
|
artikel
|
| 25 |
Microwave noise modeling of FinFETs
|
Crupi, Giovanni
|
|
2011
|
56 |
1 |
p. 18-22
5 p.
|
artikel
|
| 26 |
Mobility degradation and transistor asymmetry impact on field effect transistor access resistances extraction
|
Tinoco, J.C.
|
|
2011
|
56 |
1 |
p. 214-218
5 p.
|
artikel
|
| 27 |
Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations
|
Kaushal, Vikas
|
|
2011
|
56 |
1 |
p. 120-129
10 p.
|
artikel
|
| 28 |
On relationship between the field at an autoemitter top, anode voltage and cathode geometry
|
Stetsenko, B.V.
|
|
2011
|
56 |
1 |
p. 35-39
5 p.
|
artikel
|
| 29 |
Optimization of SiGe bandgap-based circuits for up to 300°C operation
|
Thomas, D.B.
|
|
2011
|
56 |
1 |
p. 47-55
9 p.
|
artikel
|
| 30 |
Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure
|
Chang, Li-Chuan
|
|
2011
|
56 |
1 |
p. 8-12
5 p.
|
artikel
|
| 31 |
Over 1000V/30mA operation GaN-on-Si MOSFETs fabricated on Si substrates
|
Niiyama, Yuki
|
|
2011
|
56 |
1 |
p. 73-78
6 p.
|
artikel
|
| 32 |
Physical limitations of the diffusive approximation in semiconductor device modeling
|
Mnatsakanov, Tigran T.
|
|
2011
|
56 |
1 |
p. 60-67
8 p.
|
artikel
|
| 33 |
Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer
|
Muller, Ch.
|
|
2011
|
56 |
1 |
p. 168-174
7 p.
|
artikel
|
| 34 |
SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer
|
Qu, L.W.
|
|
2011
|
56 |
1 |
p. 191-195
5 p.
|
artikel
|
| 35 |
Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes
|
Rao, Gowrish K.
|
|
2011
|
56 |
1 |
p. 100-103
4 p.
|
artikel
|
| 36 |
Temperature model for Ge2Sb2Te5 phase change memory in electrical memory device
|
Cai, Daolin
|
|
2011
|
56 |
1 |
p. 13-17
5 p.
|
artikel
|
| 37 |
Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses
|
Lee, H.K.
|
|
2011
|
56 |
1 |
p. 79-84
6 p.
|
artikel
|
| 38 |
Titanium and silver contacts on thermally oxidized titanium chip: Electrical and gas sensing properties
|
Hossein-Babaei, F.
|
|
2011
|
56 |
1 |
p. 185-190
6 p.
|
artikel
|
| 39 |
Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors
|
Millithaler, J.-F.
|
|
2011
|
56 |
1 |
p. 116-119
4 p.
|
artikel
|
| 40 |
Transient electroluminescence determination of carrier mobility and charge trapping effects in heavily doped phosphorescent organic light-emitting diodes
|
Lin, Ming-Te
|
|
2011
|
56 |
1 |
p. 196-200
5 p.
|
artikel
|
| 41 |
Traps centers impact on Silicon nanocrystal memories given by Random Telegraph Signal and low frequency noise
|
Trabelsi, M.
|
|
2011
|
56 |
1 |
p. 1-7
7 p.
|
artikel
|
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