nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level
|
Roldán, A. |
|
2010 |
54 |
12 |
p. 1606-1612 7 p. |
artikel |
2 |
Analytical modeling of quantum threshold voltage for triple gate MOSFET
|
Rakesh Kumar, P. |
|
2010 |
54 |
12 |
p. 1586-1591 6 p. |
artikel |
3 |
An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET’s with experimental demonstration
|
Park, Jaehoon |
|
2010 |
54 |
12 |
p. 1680-1685 6 p. |
artikel |
4 |
Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments
|
Praveen, K.C. |
|
2010 |
54 |
12 |
p. 1554-1560 7 p. |
artikel |
5 |
Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions
|
Liu, Siyang |
|
2010 |
54 |
12 |
p. 1598-1601 4 p. |
artikel |
6 |
Deep micro-machining of poly-ethylene terephthalate for plastic MEMS applications
|
Pajouhi, H. |
|
2010 |
54 |
12 |
p. 1536-1542 7 p. |
artikel |
7 |
Design and analysis of In0.53Ga0.47As/InP symmetric gain optoelectronic mixers
|
Zhang, Wang |
|
2010 |
54 |
12 |
p. 1549-1553 5 p. |
artikel |
8 |
Diamond MOSFET: An innovative layout to improve performance of ICs
|
Gimenez, Salvador Pinillos |
|
2010 |
54 |
12 |
p. 1690-1696 7 p. |
artikel |
9 |
Editorial Board
|
|
|
2010 |
54 |
12 |
p. IFC- 1 p. |
artikel |
10 |
Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs
|
Kao, W.C. |
|
2010 |
54 |
12 |
p. 1665-1668 4 p. |
artikel |
11 |
Effects of arsenic-ion beam density on defect evolution in polysilicon films
|
Chen, Lu-Chang |
|
2010 |
54 |
12 |
p. 1602-1605 4 p. |
artikel |
12 |
Extraction of trap densities in poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on temperature and time of post annealing
|
Kimura, Mutsumi |
|
2010 |
54 |
12 |
p. 1500-1504 5 p. |
artikel |
13 |
Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode
|
Choi, Ji-Hyuk |
|
2010 |
54 |
12 |
p. 1582-1585 4 p. |
artikel |
14 |
Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors
|
Tsao, S.W. |
|
2010 |
54 |
12 |
p. 1497-1499 3 p. |
artikel |
15 |
Improved characteristics of Gd2O3 nanocrystal memory with substrate high–low junction
|
Wang, Jer-Chyi |
|
2010 |
54 |
12 |
p. 1493-1496 4 p. |
artikel |
16 |
Investigation of carbon nanotube field emitter geometry for increased current density
|
Silan, Jeremy L. |
|
2010 |
54 |
12 |
p. 1543-1548 6 p. |
artikel |
17 |
Investigation of impact of shallow trench isolation on SONOS type memory cells
|
Xu, Yue |
|
2010 |
54 |
12 |
p. 1644-1649 6 p. |
artikel |
18 |
Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs
|
Rodrigues, M. |
|
2010 |
54 |
12 |
p. 1592-1597 6 p. |
artikel |
19 |
Low-temperature characteristics of a-Si:H thin-film transistor under mechanical strain
|
Tsao, S.W. |
|
2010 |
54 |
12 |
p. 1632-1636 5 p. |
artikel |
20 |
Magnetoconcentration effect of a bipolar magnetotransistor formed in a diffusion well
|
Tikhonov, R.D. |
|
2010 |
54 |
12 |
p. 1625-1631 7 p. |
artikel |
21 |
Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode
|
Juang, Miin-Horng |
|
2010 |
54 |
12 |
p. 1532-1535 4 p. |
artikel |
22 |
Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling
|
Xia, Kejun |
|
2010 |
54 |
12 |
p. 1566-1571 6 p. |
artikel |
23 |
Modelling and optimization of III/V transistors with matrices of nanowires
|
Larsen, Christian |
|
2010 |
54 |
12 |
p. 1505-1510 6 p. |
artikel |
24 |
Modifying electronic properties at the silicon–molecule interface using atomic tethers
|
Hacker, Christina A. |
|
2010 |
54 |
12 |
p. 1657-1664 8 p. |
artikel |
25 |
Molecular electronic device based on pH indicator by ab initio and non-equilibrium Green function methodology
|
Granhen, Ewerton Ramos |
|
2010 |
54 |
12 |
p. 1613-1616 4 p. |
artikel |
26 |
Multiple-finger turn-on uniformity in silicon-controlled rectifiers
|
Li, You |
|
2010 |
54 |
12 |
p. 1641-1643 3 p. |
artikel |
27 |
Multiple steady state current–voltage characteristics in drift–diffusion modelisation of N type and semi-insulating GaAs Gunn structures
|
Manifacier, J.C. |
|
2010 |
54 |
12 |
p. 1511-1519 9 p. |
artikel |
28 |
On the accuracy of current TCAD hot carrier injection models in nanoscale devices
|
Zaka, Alban |
|
2010 |
54 |
12 |
p. 1669-1674 6 p. |
artikel |
29 |
Patch antenna coupled 0.2THz TUNNETT oscillators
|
Balasekaran, Sundararajan |
|
2010 |
54 |
12 |
p. 1578-1581 4 p. |
artikel |
30 |
Performance and analytical modeling of Metal–Insulator-Metal Field Controlled Tunnel Transistors
|
Ferrier, M. |
|
2010 |
54 |
12 |
p. 1525-1531 7 p. |
artikel |
31 |
Performance optimization of conventional MOS-like carbon nanotube FETs with realistic contacts based on stair-case doping strategy
|
Hai-liang, Zhou |
|
2010 |
54 |
12 |
p. 1572-1577 6 p. |
artikel |
32 |
Resistance blow-up effect in micro-circuit engineering
|
Tan, Michael L.P. |
|
2010 |
54 |
12 |
p. 1617-1624 8 p. |
artikel |
33 |
Robust memory cell cylinder capacitor with cross double patterning technology
|
Kim, Seong-Goo |
|
2010 |
54 |
12 |
p. 1675-1679 5 p. |
artikel |
34 |
Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure
|
Juang, M.H. |
|
2010 |
54 |
12 |
p. 1686-1689 4 p. |
artikel |
35 |
The low leakage current in floating body GaN metal oxide semiconductor field effect transistors
|
Fujishima, Tatsuya |
|
2010 |
54 |
12 |
p. 1561-1565 5 p. |
artikel |
36 |
Theoretical and experimental investigation into environment dependence and electric properties for volatile memory based on methyl-red dye thin film
|
Reis, Marcos A.L. |
|
2010 |
54 |
12 |
p. 1697-1700 4 p. |
artikel |
37 |
Thermal design and analysis of multi-chip LED module with ceramic substrate
|
Yin, Luqiao |
|
2010 |
54 |
12 |
p. 1520-1524 5 p. |
artikel |
38 |
The surface energy-dictated initial growth of a pentacene film on a polymeric adhesion layer for field-effect transistors
|
Park, Jaehoon |
|
2010 |
54 |
12 |
p. 1650-1656 7 p. |
artikel |
39 |
Voltage-controlled multiple-valued logic design using negative differential resistance devices
|
Gan, Kwang-Jow |
|
2010 |
54 |
12 |
p. 1637-1640 4 p. |
artikel |