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                             39 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level Roldán, A.
2010
54 12 p. 1606-1612
7 p.
artikel
2 Analytical modeling of quantum threshold voltage for triple gate MOSFET Rakesh Kumar, P.
2010
54 12 p. 1586-1591
6 p.
artikel
3 An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET’s with experimental demonstration Park, Jaehoon
2010
54 12 p. 1680-1685
6 p.
artikel
4 Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments Praveen, K.C.
2010
54 12 p. 1554-1560
7 p.
artikel
5 Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions Liu, Siyang
2010
54 12 p. 1598-1601
4 p.
artikel
6 Deep micro-machining of poly-ethylene terephthalate for plastic MEMS applications Pajouhi, H.
2010
54 12 p. 1536-1542
7 p.
artikel
7 Design and analysis of In0.53Ga0.47As/InP symmetric gain optoelectronic mixers Zhang, Wang
2010
54 12 p. 1549-1553
5 p.
artikel
8 Diamond MOSFET: An innovative layout to improve performance of ICs Gimenez, Salvador Pinillos
2010
54 12 p. 1690-1696
7 p.
artikel
9 Editorial Board 2010
54 12 p. IFC-
1 p.
artikel
10 Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs Kao, W.C.
2010
54 12 p. 1665-1668
4 p.
artikel
11 Effects of arsenic-ion beam density on defect evolution in polysilicon films Chen, Lu-Chang
2010
54 12 p. 1602-1605
4 p.
artikel
12 Extraction of trap densities in poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on temperature and time of post annealing Kimura, Mutsumi
2010
54 12 p. 1500-1504
5 p.
artikel
13 Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode Choi, Ji-Hyuk
2010
54 12 p. 1582-1585
4 p.
artikel
14 Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors Tsao, S.W.
2010
54 12 p. 1497-1499
3 p.
artikel
15 Improved characteristics of Gd2O3 nanocrystal memory with substrate high–low junction Wang, Jer-Chyi
2010
54 12 p. 1493-1496
4 p.
artikel
16 Investigation of carbon nanotube field emitter geometry for increased current density Silan, Jeremy L.
2010
54 12 p. 1543-1548
6 p.
artikel
17 Investigation of impact of shallow trench isolation on SONOS type memory cells Xu, Yue
2010
54 12 p. 1644-1649
6 p.
artikel
18 Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs Rodrigues, M.
2010
54 12 p. 1592-1597
6 p.
artikel
19 Low-temperature characteristics of a-Si:H thin-film transistor under mechanical strain Tsao, S.W.
2010
54 12 p. 1632-1636
5 p.
artikel
20 Magnetoconcentration effect of a bipolar magnetotransistor formed in a diffusion well Tikhonov, R.D.
2010
54 12 p. 1625-1631
7 p.
artikel
21 Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode Juang, Miin-Horng
2010
54 12 p. 1532-1535
4 p.
artikel
22 Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling Xia, Kejun
2010
54 12 p. 1566-1571
6 p.
artikel
23 Modelling and optimization of III/V transistors with matrices of nanowires Larsen, Christian
2010
54 12 p. 1505-1510
6 p.
artikel
24 Modifying electronic properties at the silicon–molecule interface using atomic tethers Hacker, Christina A.
2010
54 12 p. 1657-1664
8 p.
artikel
25 Molecular electronic device based on pH indicator by ab initio and non-equilibrium Green function methodology Granhen, Ewerton Ramos
2010
54 12 p. 1613-1616
4 p.
artikel
26 Multiple-finger turn-on uniformity in silicon-controlled rectifiers Li, You
2010
54 12 p. 1641-1643
3 p.
artikel
27 Multiple steady state current–voltage characteristics in drift–diffusion modelisation of N type and semi-insulating GaAs Gunn structures Manifacier, J.C.
2010
54 12 p. 1511-1519
9 p.
artikel
28 On the accuracy of current TCAD hot carrier injection models in nanoscale devices Zaka, Alban
2010
54 12 p. 1669-1674
6 p.
artikel
29 Patch antenna coupled 0.2THz TUNNETT oscillators Balasekaran, Sundararajan
2010
54 12 p. 1578-1581
4 p.
artikel
30 Performance and analytical modeling of Metal–Insulator-Metal Field Controlled Tunnel Transistors Ferrier, M.
2010
54 12 p. 1525-1531
7 p.
artikel
31 Performance optimization of conventional MOS-like carbon nanotube FETs with realistic contacts based on stair-case doping strategy Hai-liang, Zhou
2010
54 12 p. 1572-1577
6 p.
artikel
32 Resistance blow-up effect in micro-circuit engineering Tan, Michael L.P.
2010
54 12 p. 1617-1624
8 p.
artikel
33 Robust memory cell cylinder capacitor with cross double patterning technology Kim, Seong-Goo
2010
54 12 p. 1675-1679
5 p.
artikel
34 Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure Juang, M.H.
2010
54 12 p. 1686-1689
4 p.
artikel
35 The low leakage current in floating body GaN metal oxide semiconductor field effect transistors Fujishima, Tatsuya
2010
54 12 p. 1561-1565
5 p.
artikel
36 Theoretical and experimental investigation into environment dependence and electric properties for volatile memory based on methyl-red dye thin film Reis, Marcos A.L.
2010
54 12 p. 1697-1700
4 p.
artikel
37 Thermal design and analysis of multi-chip LED module with ceramic substrate Yin, Luqiao
2010
54 12 p. 1520-1524
5 p.
artikel
38 The surface energy-dictated initial growth of a pentacene film on a polymeric adhesion layer for field-effect transistors Park, Jaehoon
2010
54 12 p. 1650-1656
7 p.
artikel
39 Voltage-controlled multiple-valued logic design using negative differential resistance devices Gan, Kwang-Jow
2010
54 12 p. 1637-1640
4 p.
artikel
                             39 gevonden resultaten
 
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