| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A coplanar hydrogenated amorphous silicon thin-film transistor for controlling backlight brightness of liquid-crystal display
|
Kim, Se Hwan
|
|
2008
|
52 |
3 |
p. 478-481
4 p.
|
artikel
|
| 2 |
All hot wire CVD TFTs with high deposition rate silicon nitride (3nm/s)
|
Schropp, R.E.I.
|
|
2008
|
52 |
3 |
p. 427-431
5 p.
|
artikel
|
| 3 |
Area laser crystallized LTPS TFTs with implanted contacts for active matrix OLED displays
|
Persidis, Efstathios
|
|
2008
|
52 |
3 |
p. 455-461
7 p.
|
artikel
|
| 4 |
Critical issues in plasma deposition of microcrystalline silicon for thin film transistors
|
Roca i Cabarrocas, Pere
|
|
2008
|
52 |
3 |
p. 422-426
5 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2008
|
52 |
3 |
p. IFC-
1 p.
|
artikel
|
| 6 |
Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer
|
Mariucci, L.
|
|
2008
|
52 |
3 |
p. 412-416
5 p.
|
artikel
|
| 7 |
Electrical instability in self-aligned p-channel polysilicon TFTs related to damaged regions present at the gate edges
|
Rapisarda, M.
|
|
2008
|
52 |
3 |
p. 406-411
6 p.
|
artikel
|
| 8 |
Growth of Si crystalline in SiO x films induced by millisecond rapid thermal annealing using thermal plasma jet
|
Okada, T.
|
|
2008
|
52 |
3 |
p. 377-380
4 p.
|
artikel
|
| 9 |
High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors
|
Fortunato, E.
|
|
2008
|
52 |
3 |
p. 443-448
6 p.
|
artikel
|
| 10 |
High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization
|
Tsai, Chun-Chien
|
|
2008
|
52 |
3 |
p. 365-371
7 p.
|
artikel
|
| 11 |
Hot-carrier stress induced degradation of SLS ELA polysilicon TFTs – Effects of gate width variation and device orientation
|
Kontogiannopoulos, Giannis P.
|
|
2008
|
52 |
3 |
p. 388-393
6 p.
|
artikel
|
| 12 |
Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation
|
Ma, Ming-Wen
|
|
2008
|
52 |
3 |
p. 342-347
6 p.
|
artikel
|
| 13 |
Influence of the deposition temperature on the performance of microcrystalline silicon thin film transistors
|
Oudwan, Maher
|
|
2008
|
52 |
3 |
p. 432-435
4 p.
|
artikel
|
| 14 |
Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon
|
Oh, J.H.
|
|
2008
|
52 |
3 |
p. 482-486
5 p.
|
artikel
|
| 15 |
Investigation of the undershoot effect in polycrystalline silicon thin film transistors
|
Michalas, L.
|
|
2008
|
52 |
3 |
p. 394-399
6 p.
|
artikel
|
| 16 |
Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic
|
Pecora, A.
|
|
2008
|
52 |
3 |
p. 348-352
5 p.
|
artikel
|
| 17 |
Mechanical stability of poly-Si TFT on metal foil
|
Cheon, Jun Hyuk
|
|
2008
|
52 |
3 |
p. 473-477
5 p.
|
artikel
|
| 18 |
New PMOS LTPS–TFT pixel for AMOLED to suppress the hysteresis effect on OLED current by employing a reset voltage driving
|
Lee, Jae-Hoon
|
|
2008
|
52 |
3 |
p. 462-466
5 p.
|
artikel
|
| 19 |
[No title]
|
Fortunato, Guglielmo
|
|
2008
|
52 |
3 |
p. 341-
1 p.
|
artikel
|
| 20 |
OFET for gas sensing based on SuMBE grown pentacene films
|
Toccoli, Tullio
|
|
2008
|
52 |
3 |
p. 417-421
5 p.
|
artikel
|
| 21 |
Progress in fabrication processing of thin film transistors
|
Yoshioka, Kazuya
|
|
2008
|
52 |
3 |
p. 359-364
6 p.
|
artikel
|
| 22 |
Role of hydrogen in excimer laser annealing of hydrogen-modulation doped a-Si film
|
Heya, Akira
|
|
2008
|
52 |
3 |
p. 381-387
7 p.
|
artikel
|
| 23 |
Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization
|
Ishihara, Ryoichi
|
|
2008
|
52 |
3 |
p. 353-358
6 p.
|
artikel
|
| 24 |
Source-gated thin-film transistors
|
Shannon, J.M.
|
|
2008
|
52 |
3 |
p. 449-454
6 p.
|
artikel
|
| 25 |
Specific spice modeling of microcrystalline silicon TFTs
|
Moustapha, O.
|
|
2008
|
52 |
3 |
p. 436-442
7 p.
|
artikel
|
| 26 |
Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch
|
Lee, Jae-Hoon
|
|
2008
|
52 |
3 |
p. 467-472
6 p.
|
artikel
|
| 27 |
Three-dimensionally stacked poly-Si TFT CMOS inverter with high quality laser crystallized channel on Si substrate
|
Oh, Soon-Young
|
|
2008
|
52 |
3 |
p. 372-376
5 p.
|
artikel
|
| 28 |
Universal compact model for long- and short-channel Thin-Film Transistors
|
Iñiguez, Benjamin
|
|
2008
|
52 |
3 |
p. 400-405
6 p.
|
artikel
|
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