| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 2D non-parabolic six-moments model
|
Vasicek, M.
|
|
2008
|
52 |
10 |
p. 1606-1609
4 p.
|
artikel
|
| 2 |
Amorphous SiC as a structural layer in microbridge-based RF MEMS switches for use in software-defined radio
|
Parro, Rocco J.
|
|
2008
|
52 |
10 |
p. 1647-1651
5 p.
|
artikel
|
| 3 |
An empirical study of dynamic properties of an individual carbon nanotube electron source system
|
Ribaya, Bryan P.
|
|
2008
|
52 |
10 |
p. 1680-1686
7 p.
|
artikel
|
| 4 |
An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test
|
Le Roux, C.
|
|
2008
|
52 |
10 |
p. 1550-1554
5 p.
|
artikel
|
| 5 |
Auxiliary components for kilopixel transition edge sensor arrays
|
Brown, Ari-David
|
|
2008
|
52 |
10 |
p. 1619-1624
6 p.
|
artikel
|
| 6 |
Band gap engineered resistor for mitigating linear energy transfer sensitivities in scaled submiron CMOS technology SRAM cells
|
Kanyogoro, Esau
|
|
2008
|
52 |
10 |
p. 1555-1562
8 p.
|
artikel
|
| 7 |
Capacitance modeling of short-channel double-gate MOSFETs
|
Børli, Håkon
|
|
2008
|
52 |
10 |
p. 1486-1490
5 p.
|
artikel
|
| 8 |
Challenges in SiC power MOSFET design
|
Matocha, Kevin
|
|
2008
|
52 |
10 |
p. 1631-1635
5 p.
|
artikel
|
| 9 |
Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks
|
Fu, Chung-Hao
|
|
2008
|
52 |
10 |
p. 1512-1517
6 p.
|
artikel
|
| 10 |
Characteristic temperature of a tunneling-injection quantum dot laser: Effect of out-tunneling from quantum dots
|
Han, Dae-Seob
|
|
2008
|
52 |
10 |
p. 1674-1679
6 p.
|
artikel
|
| 11 |
Characterization of Co x Ni y O hybrid metal oxide nanoparticles as charge trapping nodes in nonvolatile memory devices
|
Cheng, Chin-Lung
|
|
2008
|
52 |
10 |
p. 1530-1535
6 p.
|
artikel
|
| 12 |
Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices
|
Wang, Gan
|
|
2008
|
52 |
10 |
p. 1491-1497
7 p.
|
artikel
|
| 13 |
Demonstration of the first SiC power integrated circuit
|
Sheng, Kuang
|
|
2008
|
52 |
10 |
p. 1636-1646
11 p.
|
artikel
|
| 14 |
Design and optimization of the SOI field effect diode (FED) for ESD protection
|
Yang, Yang
|
|
2008
|
52 |
10 |
p. 1482-1485
4 p.
|
artikel
|
| 15 |
Editorial Board
|
|
|
2008
|
52 |
10 |
p. IFC-
1 p.
|
artikel
|
| 16 |
Effects of mechanical strain on laser crystallized polysilicon thin film transistors and ring oscillators fabricated on stainless steel foil
|
Jamshidi-Roudbari, Abbas
|
|
2008
|
52 |
10 |
p. 1594-1601
8 p.
|
artikel
|
| 17 |
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
|
Pham, A.T.
|
|
2008
|
52 |
10 |
p. 1660-1668
9 p.
|
artikel
|
| 18 |
Fabrication and characterization of fin SONOS flash memory with separated double-gate structure
|
Yun, Jang-Gn
|
|
2008
|
52 |
10 |
p. 1498-1504
7 p.
|
artikel
|
| 19 |
Foreword
|
Iliadis, Agis A.
|
|
2008
|
52 |
10 |
p. 1473-
1 p.
|
artikel
|
| 20 |
Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency
|
Aggarwal, Ruchika
|
|
2008
|
52 |
10 |
p. 1610-1614
5 p.
|
artikel
|
| 21 |
High-speed thermal analysis of high power diode arrays
|
Rada, N.
|
|
2008
|
52 |
10 |
p. 1602-1605
4 p.
|
artikel
|
| 22 |
Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory
|
Pavel, Akeed A.
|
|
2008
|
52 |
10 |
p. 1536-1541
6 p.
|
artikel
|
| 23 |
Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs
|
Rafhay, Quentin
|
|
2008
|
52 |
10 |
p. 1474-1481
8 p.
|
artikel
|
| 24 |
Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer
|
Tsai, Tzu-I
|
|
2008
|
52 |
10 |
p. 1518-1524
7 p.
|
artikel
|
| 25 |
Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors
|
Lu, Ching-Sen
|
|
2008
|
52 |
10 |
p. 1584-1588
5 p.
|
artikel
|
| 26 |
Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference
|
Kim, Kyechong
|
|
2008
|
52 |
10 |
p. 1589-1593
5 p.
|
artikel
|
| 27 |
Modeling and design of a monolithically integrated power converter on SiC
|
Yu, L.C.
|
|
2008
|
52 |
10 |
p. 1625-1630
6 p.
|
artikel
|
| 28 |
NEMS switch with 30nm-thick beam and 20nm-thick air-gap for high density non-volatile memory applications
|
Jang, Weon Wi
|
|
2008
|
52 |
10 |
p. 1578-1583
6 p.
|
artikel
|
| 29 |
New EEPROM concept for single bit operation
|
Raguet, J.R.
|
|
2008
|
52 |
10 |
p. 1525-1529
5 p.
|
artikel
|
| 30 |
Novel SONOS – type nonvolatile memory device with stacked tunneling and charge trapping layers
|
Tsai, Ping-Hung
|
|
2008
|
52 |
10 |
p. 1573-1577
5 p.
|
artikel
|
| 31 |
Proton-induced SEU in SiGe digital logic at cryogenic temperatures
|
Sutton, Akil. K.
|
|
2008
|
52 |
10 |
p. 1652-1659
8 p.
|
artikel
|
| 32 |
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal–oxide–semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric
|
Chen, C.P.
|
|
2008
|
52 |
10 |
p. 1615-1618
4 p.
|
artikel
|
| 33 |
Sensitivity of static noise margins to random dopant variations in 6-T SRAM cells
|
Oniciuc, Liviu
|
|
2008
|
52 |
10 |
p. 1542-1549
8 p.
|
artikel
|
| 34 |
The role of carbon on performance of strained-Si:C surface channel NMOSFETs
|
Lee, M.H.
|
|
2008
|
52 |
10 |
p. 1569-1572
4 p.
|
artikel
|
| 35 |
Tuning nonlinear susceptibility in strained AlGaAs/InGaAs quantum cascade lasers
|
Roberts, Denzil
|
|
2008
|
52 |
10 |
p. 1669-1673
5 p.
|
artikel
|
| 36 |
Two-band k · p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility
|
Sverdlov, V.
|
|
2008
|
52 |
10 |
p. 1563-1568
6 p.
|
artikel
|
| 37 |
Vertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model
|
Sviličić, B.
|
|
2008
|
52 |
10 |
p. 1505-1511
7 p.
|
artikel
|
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