nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A derivation of the van der Pauw formula from electrostatics
|
Weiss, Jonathan D. |
|
2008 |
52 |
1 |
p. 91-98 8 p. |
artikel |
2 |
A new small-signal modeling and extraction method in AlGaN/GaN HEMTs
|
Lu, Jing |
|
2008 |
52 |
1 |
p. 115-120 6 p. |
artikel |
3 |
An InP/InGaAs/InP DHBT with high power density at Ka-band
|
Wang, Che-ming |
|
2008 |
52 |
1 |
p. 49-52 4 p. |
artikel |
4 |
A unified charge model for symmetric double-gate and surrounding-gate MOSFETs
|
Lu, Huaxin |
|
2008 |
52 |
1 |
p. 67-72 6 p. |
artikel |
5 |
Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs
|
Okayama, T. |
|
2008 |
52 |
1 |
p. 164-170 7 p. |
artikel |
6 |
Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs
|
Tsai, Jung-Hui |
|
2008 |
52 |
1 |
p. 146-149 4 p. |
artikel |
7 |
Determination of the density of localized states in semiconductors from the pre-recombination transient photoconductivity
|
Belgacem, H. |
|
2008 |
52 |
1 |
p. 73-77 5 p. |
artikel |
8 |
Editorial Board
|
|
|
2008 |
52 |
1 |
p. IFC- 1 p. |
artikel |
9 |
Effects of exciplex on the electroluminescent and photovoltaic properties of organic diodes based on terbium complex
|
He, Hong |
|
2008 |
52 |
1 |
p. 31-36 6 p. |
artikel |
10 |
Electrical characteristics related to silicon film thickness in advanced FD SOI–MOSFETs
|
Ohata, A. |
|
2008 |
52 |
1 |
p. 126-133 8 p. |
artikel |
11 |
Enhancement of physical properties of indium tin oxide deposited by super density arc plasma ion plating by O2 plasma treatment
|
Kim, Soo Young |
|
2008 |
52 |
1 |
p. 1-6 6 p. |
artikel |
12 |
Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects
|
Diagne, Birahim |
|
2008 |
52 |
1 |
p. 99-106 8 p. |
artikel |
13 |
Fabrication and characterization of a novel infrared photoconductive sensor in InAlAs/InGaAs heterojunction
|
Zhang, Yan |
|
2008 |
52 |
1 |
p. 63-66 4 p. |
artikel |
14 |
Fabrication of highly air-stable ambipolar thin-film transistors with organic heterostructure of F16CuPc and DH-α6T
|
Ye, Rongbin |
|
2008 |
52 |
1 |
p. 60-62 3 p. |
artikel |
15 |
High efficiency and color saturated blue electroluminescence by using 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl as the thinner host and hole-transporter
|
Li, Mingtao |
|
2008 |
52 |
1 |
p. 121-125 5 p. |
artikel |
16 |
High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates
|
Nomura, Takehiko |
|
2008 |
52 |
1 |
p. 150-155 6 p. |
artikel |
17 |
Low frequency optical noise from organic light emitting diode
|
Ke, Lin |
|
2008 |
52 |
1 |
p. 7-10 4 p. |
artikel |
18 |
MIS polymeric structures and OTFTs using PMMA on P3HT layers
|
Estrada, M. |
|
2008 |
52 |
1 |
p. 53-59 7 p. |
artikel |
19 |
Numerical and experimental indication of thermally activated tunneling transport in CIS monograin layer solar cells
|
Černivec, Gregor |
|
2008 |
52 |
1 |
p. 78-85 8 p. |
artikel |
20 |
On the electrostatic behavior of floating nanoconductors
|
Deleruyelle, D. |
|
2008 |
52 |
1 |
p. 17-24 8 p. |
artikel |
21 |
Phonon transport and thermal conductivity in a dielectric quantum waveguide
|
Lu, Jian-Duo |
|
2008 |
52 |
1 |
p. 37-43 7 p. |
artikel |
22 |
Simulation of a dual gate organic transistor compatible with printing methods
|
Takshi, Arash |
|
2008 |
52 |
1 |
p. 107-114 8 p. |
artikel |
23 |
Studying the effect of material parameters on detectivity in a p–n In0.53Ga0.47As photovoltaic detector
|
Li, Longhai |
|
2008 |
52 |
1 |
p. 11-16 6 p. |
artikel |
24 |
Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements
|
Ferraton, S. |
|
2008 |
52 |
1 |
p. 44-48 5 p. |
artikel |
25 |
Tapered grating effects on static properties of a bistable QWS-DFB semiconductor laser amplifier
|
Aleshams, Mahmoud |
|
2008 |
52 |
1 |
p. 156-163 8 p. |
artikel |
26 |
Temperature dependent analytical model of sub-micron GaN MESFETs for microwave frequency applications
|
Kabra, Sneha |
|
2008 |
52 |
1 |
p. 25-30 6 p. |
artikel |
27 |
Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization
|
Hasan, Md. Tanvir |
|
2008 |
52 |
1 |
p. 134-139 6 p. |
artikel |
28 |
Ultra-low resistivity Al+ implanted 4H–SiC obtained by microwave annealing and a protective graphite cap
|
Sundaresan, Siddarth G. |
|
2008 |
52 |
1 |
p. 140-145 6 p. |
artikel |
29 |
Very low-power CMOS LNA for UWB wireless receivers using current-reused topology
|
Kao, H.L. |
|
2008 |
52 |
1 |
p. 86-90 5 p. |
artikel |