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                                       Details for article 24 of 29 found articles
 
 
  Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements
 
 
Title: Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements
Author: Ferraton, S.
Militaru, L.
Souifi, A.
Monfray, S.
Skotnicki, T.
Appeared in: Solid-state electronics
Paging: Volume 52 (2008) nr. 1 pages 5 p.
Year: 2008
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 24 of 29 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands