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                             32 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET Roy, A.S.
 2006
 50 4 p. 687-693
7 p.
 artikel
2 Advanced memory concepts for DRAM and nonvolatile memories Horiguchi, Fumio
 2006
 50 4 p. 545-550
6 p.
 artikel
3 A new CMP-less integration approach for highly scaled totally silicided (TOSI) gate bulk transistors based on the use of selective S/D Si epitaxy and ultra-low gates Müller, Markus
 2006
 50 4 p. 620-625
6 p.
 artikel
4 A physics-based low frequency noise model for MOSFETs under periodic large signal excitation Brederlow, Ralf
 2006
 50 4 p. 668-673
6 p.
 artikel
5 A robust 45nm gate-length CMOSFET for 90nm Hi-speed technology Lim, K.Y.
 2006
 50 4 p. 579-586
8 p.
 artikel
6 A semiempirical surface scattering model for quantum corrected full-band Monte-Carlo simulation of biaxially strained Si/SiGe NMOSFETs Pham, A.T.
 2006
 50 4 p. 694-700
7 p.
 artikel
7 A SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and beyond Kumura, Y.
 2006
 50 4 p. 606-612
7 p.
 artikel
8 BioMEMS for medicine: On-chip cell characterization and implantable microelectrodes Cheung, Karen C.
 2006
 50 4 p. 551-557
7 p.
 artikel
9 Calculations of hole mass in [110]-uniaxially strained silicon for the stress-engineering of p-MOS transistors Guillaume, T.
 2006
 50 4 p. 701-708
8 p.
 artikel
10 Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors Chaisantikulwat, W.
 2006
 50 4 p. 637-643
7 p.
 artikel
11 Do hot electrons cause excess noise? Jungemann, C.
 2006
 50 4 p. 674-679
6 p.
 artikel
12 Electron mobility in quasi-ballistic Si MOSFETs Łusakowski, J.
 2006
 50 4 p. 632-636
5 p.
 artikel
13 Generic device abstractions for information processing technologies Cavin, Ralph K.
 2006
 50 4 p. 520-526
7 p.
 artikel
14 IFC - Editorial Board 2006
 50 4 p. CO2-
1 p.
 artikel
15 Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs Zhang, M.
 2006
 50 4 p. 594-600
7 p.
 artikel
16 Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study Nehari, K.
 2006
 50 4 p. 716-721
6 p.
 artikel
17 Lateral coupling and immunity to substrate effect in ΩFET devices Ritzenthaler, R.
 2006
 50 4 p. 558-565
8 p.
 artikel
18 Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETs Lime, F.
 2006
 50 4 p. 644-649
6 p.
 artikel
19 Method of activation energy analysis and application to individual cells of 256Mb DRAM in 110nm technology Weber, A.
 2006
 50 4 p. 613-619
7 p.
 artikel
20 Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions Dixit, A.
 2006
 50 4 p. 587-593
7 p.
 artikel
21 Nanotechnology: Role in emerging nanoelectronics Yu, B.
 2006
 50 4 p. 536-544
9 p.
 artikel
22 65nm LP/GP mix low cost platform for multi-media wireless and consumer applications Tavel, B.
 2006
 50 4 p. 573-578
6 p.
 artikel
23 [No title] Ghibaudo, G.
 2006
 50 4 p. 515-
1 p.
 artikel
24 On the mobility in high-κ/metal gate MOSFETs: Evaluation of the high-κ phonon scattering impact Weber, Olivier
 2006
 50 4 p. 626-631
6 p.
 artikel
25 Organic CuTCNQ non-volatile memories for integration in the CMOS backend-of-line: Preparation from gas/solid reaction and downscaling to an area of 0.25μm2 Müller, Robert
 2006
 50 4 p. 601-605
5 p.
 artikel
26 Performance and physics of sub-50nm strained Si on Si1−x Ge x -on-insulator (SGOI) nMOSFETs Andrieu, F.
 2006
 50 4 p. 566-572
7 p.
 artikel
27 Pushing CMOS beyond the roadmap Risch, L.
 2006
 50 4 p. 527-535
9 p.
 artikel
28 Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs Gnani, Elena
 2006
 50 4 p. 709-715
7 p.
 artikel
29 Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET Munteanu, Daniela
 2006
 50 4 p. 680-686
7 p.
 artikel
30 Silicon forever! Really? Stormer, Horst L.
 2006
 50 4 p. 516-519
4 p.
 artikel
31 Sub-25nm UTB SOI SRAM cell under the influence of discrete random dopants Samsudin, K.
 2006
 50 4 p. 660-667
8 p.
 artikel
32 Wavelet-based adaptive mesh generation for device simulation De Marchi, Luca
 2006
 50 4 p. 650-659
10 p.
 artikel
                             32 gevonden resultaten
 
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