| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alpha-particle-induced SER of embedded SRAMs affected by variations in process parameters and by the use of process options
|
Heijmen, Tino
|
|
2005
|
49 |
11 |
p. 1783-1790
8 p.
|
artikel
|
| 2 |
A macro model of programmable metallization cell devices
|
Gilbert, Nad E.
|
|
2005
|
49 |
11 |
p. 1813-1819
7 p.
|
artikel
|
| 3 |
A model for the channel potential of charge-trapping memories and its implications for device scaling
|
Sadd, M.
|
|
2005
|
49 |
11 |
p. 1754-1758
5 p.
|
artikel
|
| 4 |
A small granular controlled leakage reduction system for SRAMs
|
Geens, Peter
|
|
2005
|
49 |
11 |
p. 1776-1782
7 p.
|
artikel
|
| 5 |
A system-level approach for embedded memory robustness
|
Mariani, Riccardo
|
|
2005
|
49 |
11 |
p. 1791-1798
8 p.
|
artikel
|
| 6 |
Design of high-speed 128-bit embedded flash memories allowing in place execution of the code
|
Combe, Marylène
|
|
2005
|
49 |
11 |
p. 1867-1874
8 p.
|
artikel
|
| 7 |
3D Simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories
|
Ghetti, Andrea
|
|
2005
|
49 |
11 |
p. 1805-1812
8 p.
|
artikel
|
| 8 |
Evolution of materials technology for stacked-capacitors in 65nm embedded-DRAM
|
Gerritsen, Eric
|
|
2005
|
49 |
11 |
p. 1767-1775
9 p.
|
artikel
|
| 9 |
Fully compatible novel SNONOS structure for improved electrical performance in NAND Flash memories
|
Han, Jeong Hee
|
|
2005
|
49 |
11 |
p. 1857-1861
5 p.
|
artikel
|
| 10 |
Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays
|
Rao, R.A.
|
|
2005
|
49 |
11 |
p. 1722-1727
6 p.
|
artikel
|
| 11 |
Introduction
|
Gerritsen, Eric
|
|
2005
|
49 |
11 |
p. 1713-
1 p.
|
artikel
|
| 12 |
Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices
|
Buckley, J.
|
|
2005
|
49 |
11 |
p. 1833-1840
8 p.
|
artikel
|
| 13 |
Low voltage and low power embedded 2T-SONOS flash memories improved by using P-type devices and high-K materials
|
van Schaijk, R.
|
|
2005
|
49 |
11 |
p. 1849-1856
8 p.
|
artikel
|
| 14 |
Memory technology in mobile devices—status and trends
|
Vihmalo, Jukka-Pekka
|
|
2005
|
49 |
11 |
p. 1714-1721
8 p.
|
artikel
|
| 15 |
Modelling and simulation of charging and discharging processes in nanocrystal flash memories during program and erase operations
|
Campera, Andrea
|
|
2005
|
49 |
11 |
p. 1745-1753
9 p.
|
artikel
|
| 16 |
Modelling of the 1T-Bulk capacitor-less DRAM cell with improved performances: The way to scaling
|
Ranica, R.
|
|
2005
|
49 |
11 |
p. 1759-1766
8 p.
|
artikel
|
| 17 |
NVM based on FinFET device structures
|
Hofmann, F.
|
|
2005
|
49 |
11 |
p. 1799-1804
6 p.
|
artikel
|
| 18 |
Organic electrically bistable materials for non-volatile memory applications
|
Pirovano, A.
|
|
2005
|
49 |
11 |
p. 1820-1825
6 p.
|
artikel
|
| 19 |
Scaling down the interpoly dielectric for next generation Flash memory: Challenges and opportunities
|
Govoreanu, B.
|
|
2005
|
49 |
11 |
p. 1841-1848
8 p.
|
artikel
|
| 20 |
Scaling effects in dual-bit split-gate nitride memory devices
|
Breuil, L.
|
|
2005
|
49 |
11 |
p. 1862-1866
5 p.
|
artikel
|
| 21 |
Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications
|
Bonafos, C.
|
|
2005
|
49 |
11 |
p. 1734-1744
11 p.
|
artikel
|
| 22 |
Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics
|
Deleruyelle, D.
|
|
2005
|
49 |
11 |
p. 1728-1733
6 p.
|
artikel
|
| 23 |
Switching and programming dynamics in phase-change memory cells
|
Ielmini, D.
|
|
2005
|
49 |
11 |
p. 1826-1832
7 p.
|
artikel
|
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