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                             40 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A 2D-electron-gas terahertz detector based on the bipolar inversion channel field-effect transistor Huo, Y.
 2003
 47 11 p. 2089-2095
7 p.
 artikel
2 A fully integrated dual-band VCO by 0.18 μm CMOS technologies Ho, Chien-Chih
 2003
 47 11 p. 2015-2018
4 p.
 artikel
3 A high performance RF LDMOSFET in thin film SOI technology with step drift profile Luo, J.
 2003
 47 11 p. 1937-1941
5 p.
 artikel
4 A model for multi-finger HBTs including current gain collapse effects Garlapati, Akhil
 2003
 47 11 p. 1983-1987
5 p.
 artikel
5 A new procedure to extract the threshold voltage of MOSFETs using noise-reduction techniques Picos, R.
 2003
 47 11 p. 1953-1958
6 p.
 artikel
6 A novel integrable surface acoustic wave notch filter Tang, I-Tseng
 2003
 47 11 p. 2063-2066
4 p.
 artikel
7 Application of advanced metal–oxide–semiconductor transistor in next generation, silicon resonant tunneling MOS transistor, to new logic circuit Matsuo, Naoto
 2003
 47 11 p. 1969-1972
4 p.
 artikel
8 A review of leakage current in SOI CMOS ICs: impact on parametric testing techniques Iñı́guez, Benjamı́n
 2003
 47 11 p. 1959-1967
9 p.
 artikel
9 A unified I–V model for PD/FD SOI MOSFETs with a compact model for floating body effects Bolouki, Sara
 2003
 47 11 p. 1909-1915
7 p.
 artikel
10 A unified model for high-frequency current noise of MOSFETs Teng, Heng-Fa
 2003
 47 11 p. 2043-2048
6 p.
 artikel
11 Computational load pull simulations of SiC microwave power transistors Jonsson, R.
 2003
 47 11 p. 1921-1926
6 p.
 artikel
12 Computationally efficient solution of carrier trapping/annihilation equation in MOS devices using Runge–Kutta method Samanta, Piyas
 2003
 47 11 p. 2135-2137
3 p.
 artikel
13 DC electric field assisted alignment of carbon nanotubes on metal electrodes Senthil Kumar, M.
 2003
 47 11 p. 2075-2080
6 p.
 artikel
14 Defect spectroscopy using 1/f γ noise of gate leakage current in ultrathin oxide MOSFETs Lee, Jonghwan
 2003
 47 11 p. 1973-1981
9 p.
 artikel
15 Device simulations of nanocrystalline silicon thin-film transistors Dosev, D.
 2003
 47 11 p. 1917-1920
4 p.
 artikel
16 Effect of substituted derivatives on carrier transport in organic polymers Kwok, Harry H.L.
 2003
 47 11 p. 2031-2034
4 p.
 artikel
17 Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs Bernát, J.
 2003
 47 11 p. 2097-2103
7 p.
 artikel
18 Electronic effects of light ion damage in hydrogenated amorphous silicon Shannon, J.M.
 2003
 47 11 p. 1903-1907
5 p.
 artikel
19 Elimination of burn-in effect in carbon-doped InGaP/GaAs HBTs by hydrogen lateral diffusion Su, Y.K.
 2003
 47 11 p. 2011-2014
4 p.
 artikel
20 Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom Ortiz-Conde, A.
 2003
 47 11 p. 2067-2074
8 p.
 artikel
21 Explicit current model for dual-gate MOSFET Karahaliloglu, Koray
 2003
 47 11 p. 2117-2125
9 p.
 artikel
22 Fabrication of indium resistors by layer-by-layer nanoassembly and microlithography techniques Shi, Jingshi
 2003
 47 11 p. 2085-2088
4 p.
 artikel
23 Hafnium oxide gate dielectric for strained-Si1−x Ge x Maiti, C.K.
 2003
 47 11 p. 1995-2000
6 p.
 artikel
24 In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer Wu, L.W.
 2003
 47 11 p. 2027-2030
4 p.
 artikel
25 Modeling and simulation of asymmetric gate stack (ASYMGAS)-MOSFET Saxena, Manoj
 2003
 47 11 p. 2131-2134
4 p.
 artikel
26 Nitride-based blue LEDs with GaN/SiN double buffer layers Kuo, C.H.
 2003
 47 11 p. 2019-2022
4 p.
 artikel
27 Nitride-based 2DEG photodetectors with a large AC responsivity Chang, S.J.
 2003
 47 11 p. 2023-2026
4 p.
 artikel
28 Ohmic contact properties of Ni/C film on 4H-SiC Lu, Weijie
 2003
 47 11 p. 2001-2010
10 p.
 artikel
29 Ohmic contacts to 3C-SiC for Schottky diode gas sensors Roy, S.
 2003
 47 11 p. 2035-2041
7 p.
 artikel
30 Optimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices Or, David C.T.
 2003
 47 11 p. 2049-2053
5 p.
 artikel
31 Optoelectronic property of PN junction on erbium-doped silicon using thermal diffusion method Ruo Chen, Bing
 2003
 47 11 p. 2127-2130
4 p.
 artikel
32 Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate Lee, Jaesun
 2003
 47 11 p. 2081-2084
4 p.
 artikel
33 Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices Andrei, Petru
 2003
 47 11 p. 2055-2061
7 p.
 artikel
34 RF MOSFET: recent advances, current status and future trends Liou, Juin J
 2003
 47 11 p. 1881-1895
15 p.
 artikel
35 Sub-circuit models of silicon-on-insulator insulated-gate pn-junction devices for electrostatic discharge protection circuit design and their applications Wakita, Shigeyuki
 2003
 47 11 p. 1943-1952
10 p.
 artikel
36 Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers Lederer, Dimitri
 2003
 47 11 p. 1927-1936
10 p.
 artikel
37 Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs Huang, H.K.
 2003
 47 11 p. 1989-1994
6 p.
 artikel
38 Terahertz self-oscillations in negative-effective-mass oscillators Cao, J.C.
 2003
 47 11 p. 1897-1901
5 p.
 artikel
39 Thermal resistance variation of HBT with high junction temperature and bias condition Su, Yan-Kuin
 2003
 47 11 p. 2113-2116
4 p.
 artikel
40 Very low Schottky barrier to n-type silicon with PtEr-stack silicide Tang, Xiaohui
 2003
 47 11 p. 2105-2111
7 p.
 artikel
                             40 gevonden resultaten
 
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