| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 0.10 μm buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket
|
Guegan, G.
|
|
2002
|
46 |
3 |
p. 343-348
6 p.
|
artikel
|
| 2 |
Analytical and numerical study of the impact of HALOs on short channel and hot carrier effects in scaled MOSFETs
|
Zanchetta, S.
|
|
2002
|
46 |
3 |
p. 429-434
6 p.
|
artikel
|
| 3 |
A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching
|
Caillat, C.
|
|
2002
|
46 |
3 |
p. 349-352
4 p.
|
artikel
|
| 4 |
Computational investigation of the accuracy of constant-dC scanning capacitance microscopy for ultra-shallow doping profile characterization
|
Ciampolini, Lorenzo
|
|
2002
|
46 |
3 |
p. 445-449
5 p.
|
artikel
|
| 5 |
Continued growth in CMOS beyond 0.10 μm
|
Sugii, T.
|
|
2002
|
46 |
3 |
p. 329-336
8 p.
|
artikel
|
| 6 |
Design considerations for CMOS near the limits of scaling
|
Frank, David J.
|
|
2002
|
46 |
3 |
p. 315-320
6 p.
|
artikel
|
| 7 |
Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model
|
Vandamme, E.P.
|
|
2002
|
46 |
3 |
p. 353-360
8 p.
|
artikel
|
| 8 |
Electrical characterization and modeling of MOS structures with an ultra-thin oxide
|
Clerc, R.
|
|
2002
|
46 |
3 |
p. 407-416
10 p.
|
artikel
|
| 9 |
Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping
|
Fink, C.
|
|
2002
|
46 |
3 |
p. 387-391
5 p.
|
artikel
|
| 10 |
1/f noise measurements in n-channel MOSFETs processed in 0.25 μm technology
|
Akue Allogo, Y.
|
|
2002
|
46 |
3 |
p. 361-366
6 p.
|
artikel
|
| 11 |
Foreword
|
Balestra, Francis
|
|
2002
|
46 |
3 |
p. 313-
1 p.
|
artikel
|
| 12 |
Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture
|
Ernst, T.
|
|
2002
|
46 |
3 |
p. 373-378
6 p.
|
artikel
|
| 13 |
0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters
|
Vanmackelberg, M
|
|
2002
|
46 |
3 |
p. 379-386
8 p.
|
artikel
|
| 14 |
Modeling of stress-induced leakage current and impact ionization in MOS devices
|
Ielmini, Daniele
|
|
2002
|
46 |
3 |
p. 417-422
6 p.
|
artikel
|
| 15 |
On the origin of the LF noise in Si/Ge MOSFETs
|
Ghibaudo, Gérard
|
|
2002
|
46 |
3 |
p. 393-398
6 p.
|
artikel
|
| 16 |
Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET
|
Balaban, S.N.
|
|
2002
|
46 |
3 |
p. 435-444
10 p.
|
artikel
|
| 17 |
Reliability of ultra-thin film deep submicron SIMOX nMOSFETs
|
Potavin, O.
|
|
2002
|
46 |
3 |
p. 367-371
5 p.
|
artikel
|
| 18 |
Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures
|
Marchand, B.
|
|
2002
|
46 |
3 |
p. 337-342
6 p.
|
artikel
|
| 19 |
Simulation of polysilicon quantization and its effect on n- and p-MOSFET performance
|
Spinelli, Alessandro S.
|
|
2002
|
46 |
3 |
p. 423-428
6 p.
|
artikel
|
| 20 |
Stress induced leakage current under pulsed voltage stress
|
Cester, A.
|
|
2002
|
46 |
3 |
p. 399-405
7 p.
|
artikel
|
| 21 |
Ultra-thin gate oxide reliability projections
|
Weir, B.E.
|
|
2002
|
46 |
3 |
p. 321-328
8 p.
|
artikel
|
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