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                                       Details for article 12 of 21 found articles
 
 
  Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture
 
 
Title: Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture
Author: Ernst, T.
Tinella, C.
Raynaud, C.
Cristoloveanu, S.
Appeared in: Solid-state electronics
Paging: Volume 46 (2002) nr. 3 pages 6 p.
Year: 2002
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 21 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands