| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A dynamic source–drain extension MOSFET using a separately biased conductive spacer
|
González Sr., Fernando
|
|
2002
|
46 |
10 |
p. 1525-1530
6 p.
|
artikel
|
| 2 |
AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates
|
Brown, J.D
|
|
2002
|
46 |
10 |
p. 1535-1539
5 p.
|
artikel
|
| 3 |
Analysis of parasitic barriers formed at SiGe/Si heterojunctions due to p–n junction displacement
|
Roenker, K.P.
|
|
2002
|
46 |
10 |
p. 1473-1483
11 p.
|
artikel
|
| 4 |
An analytical model for SiC MESFETs
|
Murray, S.P.
|
|
2002
|
46 |
10 |
p. 1495-1505
11 p.
|
artikel
|
| 5 |
A physical model of a CMOS varactor with high capacitance tuning range and its application to simulate integrated VCOs
|
Maget, Judith
|
|
2002
|
46 |
10 |
p. 1609-1615
7 p.
|
artikel
|
| 6 |
A systematic approach for multidimensional, closed-form analytic modeling: mobilities and effective intrinsic carrier concentrations in p-type Ga1−x Al xAs
|
Bennett, Herbert S.
|
|
2002
|
46 |
10 |
p. 1617-1619
3 p.
|
artikel
|
| 7 |
Cascading structure of LDMOS and LIGBT for increasing the forward biased safe operating area
|
Lee, Seung-Chul
|
|
2002
|
46 |
10 |
p. 1553-1556
4 p.
|
artikel
|
| 8 |
Characterization of interface traps in the subthreshold region of implanted 4H and 6H-SiC MOSFETs
|
Zeng, Yu (Anne)
|
|
2002
|
46 |
10 |
p. 1579-1582
4 p.
|
artikel
|
| 9 |
Charactersization of a novel GaAs-based microwave optical switch
|
Lau, K.-M
|
|
2002
|
46 |
10 |
p. 1573-1577
5 p.
|
artikel
|
| 10 |
Design optimization of multi-barrier tunneling devices using the transfer-matrix method
|
Gehring, A.
|
|
2002
|
46 |
10 |
p. 1545-1551
7 p.
|
artikel
|
| 11 |
Development of quantum cascade lasers for high peak output power and low threshold current density
|
Slivken, S
|
|
2002
|
46 |
10 |
p. 1531-1534
4 p.
|
artikel
|
| 12 |
Dynamic optical filtering in DWDM systems using the DMD
|
Duncan, Walter M
|
|
2002
|
46 |
10 |
p. 1583-1585
3 p.
|
artikel
|
| 13 |
Electron transport within resonant tunneling diodes with staggered-bandgap heterostructures
|
Gelmont, Boris
|
|
2002
|
46 |
10 |
p. 1513-1518
6 p.
|
artikel
|
| 14 |
Foreword
|
|
|
2002
|
46 |
10 |
p. 1471-
1 p.
|
artikel
|
| 15 |
Frequency dependence of GaN/AlGaN HEMT amplifier using time-domain analysis
|
Anwar, A.F.M
|
|
2002
|
46 |
10 |
p. 1507-1511
5 p.
|
artikel
|
| 16 |
High frequency GaN/AlGaN HEMT class-E power amplifier
|
Islam, Syed S.
|
|
2002
|
46 |
10 |
p. 1621-1625
5 p.
|
artikel
|
| 17 |
High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations
|
Khosru, Quazi D.M
|
|
2002
|
46 |
10 |
p. 1659-1664
6 p.
|
artikel
|
| 18 |
Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors
|
Sheng, S.R
|
|
2002
|
46 |
10 |
p. 1603-1608
6 p.
|
artikel
|
| 19 |
InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates using InP metamorphic buffer layer
|
Kim, Y.M
|
|
2002
|
46 |
10 |
p. 1541-1544
4 p.
|
artikel
|
| 20 |
Investigation and modeling of impact ionization in HEMTs for DC and RF operating conditions
|
Isler, Mark
|
|
2002
|
46 |
10 |
p. 1587-1593
7 p.
|
artikel
|
| 21 |
Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb
|
Ikossi, K
|
|
2002
|
46 |
10 |
p. 1627-1631
5 p.
|
artikel
|
| 22 |
Mid-infrared photonic-crystal distributed-feedback lasers
|
Bewley, W.W.
|
|
2002
|
46 |
10 |
p. 1557-1566
10 p.
|
artikel
|
| 23 |
Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs
|
Malm, B.G
|
|
2002
|
46 |
10 |
p. 1567-1571
5 p.
|
artikel
|
| 24 |
Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks
|
Triplett, G
|
|
2002
|
46 |
10 |
p. 1519-1524
6 p.
|
artikel
|
| 25 |
Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices
|
Krishnamoorthy, Soumya
|
|
2002
|
46 |
10 |
p. 1633-1637
5 p.
|
artikel
|
| 26 |
Properties of self-assembled ZnO nanostructures
|
Ali, H.A
|
|
2002
|
46 |
10 |
p. 1639-1642
4 p.
|
artikel
|
| 27 |
Pt–Ga Ohmic contacts to n-ZnO using focused ion beams
|
Inumpudi, A
|
|
2002
|
46 |
10 |
p. 1665-1668
4 p.
|
artikel
|
| 28 |
Simulation and design of SiGe HBTs for power amplification at 10 GHz
|
Todorova, D
|
|
2002
|
46 |
10 |
p. 1485-1493
9 p.
|
artikel
|
| 29 |
Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era
|
Choi, Yang-Kyu
|
|
2002
|
46 |
10 |
p. 1595-1601
7 p.
|
artikel
|
| 30 |
Strain relaxation in AlSb/GaSb heterostructures
|
Sarney, W.L
|
|
2002
|
46 |
10 |
p. 1643-1649
7 p.
|
artikel
|
| 31 |
The problems originating from the grain boundaries in dielectric storage capacitors
|
Lee, Jang-Sik
|
|
2002
|
46 |
10 |
p. 1651-1657
7 p.
|
artikel
|
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