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Journal description
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Details for article 17 of 31 found articles
| Title: |
High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations |
| Author: |
Khosru, Quazi D.M Nakajima, A Yoshimoto, T Yokoyama, S |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 46 (2002) nr. 10 pages 6 p. |
| Year: |
2002 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 17 of 31 found articles
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