| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anodic oxidation as a low thermal budget process for passivation of SiGe
|
Rappich, J
|
|
2001
|
45 |
8 |
p. 1465-1470
6 p.
|
artikel
|
| 2 |
A recombination- and trap-assisted tunneling model for stress-induced leakage current
|
Ielmini, Daniele
|
|
2001
|
45 |
8 |
p. 1361-1369
9 p.
|
artikel
|
| 3 |
Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides
|
Miranda, E
|
|
2001
|
45 |
8 |
p. 1327-1332
6 p.
|
artikel
|
| 4 |
Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
|
Shimizu-Iwayama, Tsutomu
|
|
2001
|
45 |
8 |
p. 1487-1494
8 p.
|
artikel
|
| 5 |
Comparison of oxide leakage currents induced by ion implantation and high field electric stress
|
Goguenheim, D
|
|
2001
|
45 |
8 |
p. 1355-1360
6 p.
|
artikel
|
| 6 |
Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiN x
|
Pic, N.
|
|
2001
|
45 |
8 |
p. 1265-1270
6 p.
|
artikel
|
| 7 |
Effect of boron on gate oxide degradation and reliability in PMOS devices
|
Brozek, Tomasz
|
|
2001
|
45 |
8 |
p. 1293-1297
5 p.
|
artikel
|
| 8 |
Evolution from soft to hard breakdown in thin gate oxides: effect of oxide thickness, capacitor area and stress current
|
Cacciato, A
|
|
2001
|
45 |
8 |
p. 1339-1344
6 p.
|
artikel
|
| 9 |
Experimental study of the current characteristics of thin silicon oxide films under dynamic stress
|
Zahlmann-Nowitzki, J.-W
|
|
2001
|
45 |
8 |
p. 1309-1316
8 p.
|
artikel
|
| 10 |
Feasibility of an isolation by local oxidation of silicon without field implant
|
Fay, J.L
|
|
2001
|
45 |
8 |
p. 1257-1263
7 p.
|
artikel
|
| 11 |
Formation of atomically smooth, ultrathin oxides on Si(113)
|
Müssig, H.-J.
|
|
2001
|
45 |
8 |
p. 1219-1231
13 p.
|
artikel
|
| 12 |
Growth and characterization of epitaxial ferroelectric PbZr x Ti1−x O3 thin film capacitors with SrRuO3 electrodes for non-volatile memory applications
|
Guerrero, C.
|
|
2001
|
45 |
8 |
p. 1433-1440
8 p.
|
artikel
|
| 13 |
High electric field induced positive charges in thin gate oxide
|
Bellutti, P.
|
|
2001
|
45 |
8 |
p. 1333-1338
6 p.
|
artikel
|
| 14 |
High quality thin oxynitride by RTP annealing of in situ steam generation oxides for flash memory applications
|
Brazzelli, D
|
|
2001
|
45 |
8 |
p. 1271-1278
8 p.
|
artikel
|
| 15 |
Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain
|
Rafı́, J.M.
|
|
2001
|
45 |
8 |
p. 1391-1401
11 p.
|
artikel
|
| 16 |
Investigation of plasma damage effects on characteristics and reliability of MOS devices with thin gate dielectrics
|
Brozek, Tomasz
|
|
2001
|
45 |
8 |
p. 1299-1307
9 p.
|
artikel
|
| 17 |
Low voltage and temperature effects on SILC in stressed ultrathin oxide films
|
Meinertzhagen, A
|
|
2001
|
45 |
8 |
p. 1371-1381
11 p.
|
artikel
|
| 18 |
Optical and structural characterization of Si nanocrystals ion beam synthesized in SiO2: correlation between the surface passivation and the photoluminescence emission
|
López, M
|
|
2001
|
45 |
8 |
p. 1495-1504
10 p.
|
artikel
|
| 19 |
Organic thin film transistors: from active materials to novel applications
|
Torsi, L.
|
|
2001
|
45 |
8 |
p. 1479-1485
7 p.
|
artikel
|
| 20 |
Photo-induced growth of dielectrics with excimer lamps
|
Boyd, Ian W.
|
|
2001
|
45 |
8 |
p. 1413-1431
19 p.
|
artikel
|
| 21 |
Preface
|
Garrido, Blas
|
|
2001
|
45 |
8 |
p. 1205-1206
2 p.
|
artikel
|
| 22 |
Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure in different gas atmospheres
|
Beichele, M.
|
|
2001
|
45 |
8 |
p. 1383-1389
7 p.
|
artikel
|
| 23 |
Select transistor modulated cell array structure test application in EEPROM process reliability
|
Pio, Federico
|
|
2001
|
45 |
8 |
p. 1279-1291
13 p.
|
artikel
|
| 24 |
Silicon anodic oxides grown in the oscillatory anodisation regime – kinetics of growth, composition and electrical properties
|
Parkhutik, Vitali
|
|
2001
|
45 |
8 |
p. 1451-1463
13 p.
|
artikel
|
| 25 |
Silicon on insulator technologies and devices: from present to future
|
Cristoloveanu, Sorin
|
|
2001
|
45 |
8 |
p. 1403-1411
9 p.
|
artikel
|
| 26 |
Single crystalline silicon dioxide films on Mo(112)
|
Schroeder, T.
|
|
2001
|
45 |
8 |
p. 1471-1478
8 p.
|
artikel
|
| 27 |
Structural, ellipsometry and photoluminescence spectroscopy studies of silicon nanograins embedded in a silica matrix
|
Charvet, S.
|
|
2001
|
45 |
8 |
p. 1505-1511
7 p.
|
artikel
|
| 28 |
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode
|
Herden, M
|
|
2001
|
45 |
8 |
p. 1251-1256
6 p.
|
artikel
|
| 29 |
Tantalum pentoxide obtained from TaN x and TaSi2 anodisation: an inexpensive and thermally stable high k dielectric
|
Dueñas, S.
|
|
2001
|
45 |
8 |
p. 1441-1450
10 p.
|
artikel
|
| 30 |
The different roles of charged and neutral atomic and molecular oxidising species in silicon oxidation from ab initio calculations
|
Szymanski, M.A
|
|
2001
|
45 |
8 |
p. 1233-1240
8 p.
|
artikel
|
| 31 |
Theory and applications of internal photoemission in the MOS system at low electric fields
|
Przewlocki, Henryk M.
|
|
2001
|
45 |
8 |
p. 1241-1250
10 p.
|
artikel
|
| 32 |
Time decay of stress induced leakage current in thin gate oxides by low-field electron injection
|
Cester, A
|
|
2001
|
45 |
8 |
p. 1345-1353
9 p.
|
artikel
|
| 33 |
Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures
|
De Salvo, B.
|
|
2001
|
45 |
8 |
p. 1513-1519
7 p.
|
artikel
|
| 34 |
Two-step stress methodology for monitoring the gate oxide degradation in MOS devices
|
Rodrı́guez, R.
|
|
2001
|
45 |
8 |
p. 1317-1325
9 p.
|
artikel
|
| 35 |
Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime
|
A. Irene, Eugene
|
|
2001
|
45 |
8 |
p. 1207-1217
11 p.
|
artikel
|
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