nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A novel experimental technique: combined gated-diode method for extracting lateral distribution of interface traps in SOI NMOSFETs
|
He, Jin |
|
|
45 |
7 |
p. 1107-1113 |
artikel |
2 |
A segmented anode, npn controlled lateral insulated gate bipolar transistor
|
Hardikar, S. |
|
|
45 |
7 |
p. 1055-1058 |
artikel |
3 |
Characteristics of LiNbO3 memory capacitors fabricated using a low thermal budget process
|
Lim, D.G |
|
|
45 |
7 |
p. 1159-1163 |
artikel |
4 |
Deep level investigation in AlGaAs/InGaAs/GaAs cryoelectronic MODFET
|
Dermoul, I. |
|
|
45 |
7 |
p. 1059-1065 |
artikel |
5 |
Dynamic triggering characteristics of SCR-type electrostatic discharge protection circuits
|
Jang, Sheng-Lyang |
|
|
45 |
7 |
p. 1091-1097 |
artikel |
6 |
Effect of temperature dependence of band gap and device constant on I–V characteristics of junction diode
|
Acharya, Y.B. |
|
|
45 |
7 |
p. 1115-1119 |
artikel |
7 |
Electrical characterization of ultrathin oxides of silicon grown by wet oxidation at 800°C
|
Bhat, V.K |
|
|
45 |
7 |
p. 1127-1135 |
artikel |
8 |
Epitaxial GaN films grown on Si(111) with varied buffer layers
|
Liaw, H.M. |
|
|
45 |
7 |
p. 1173-1177 |
artikel |
9 |
Epitaxial layer sheet resistance outside and under ohmic contacts measurements using electrostatic force microscopy
|
Bresse, J.F. |
|
|
45 |
7 |
p. 1071-1076 |
artikel |
10 |
Gate-length dependence of negative differential resistance in ridge-type InGaAs/InAlAs quantum wire field-effect transistor
|
Kim, Seong-Jin |
|
|
45 |
7 |
p. 1099-1105 |
artikel |
11 |
New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions
|
Cerdeira, A. |
|
|
45 |
7 |
p. 1077-1080 |
artikel |
12 |
Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler–Nordheim tunneling current oscillations in ultrathin MOSFETs
|
Mao, Lingfeng |
|
|
45 |
7 |
p. 1081-1084 |
artikel |
13 |
On theory of 1/f noise in semiconductors
|
Borovitskaya, E. |
|
|
45 |
7 |
p. 1067-1069 |
artikel |
14 |
Optoelectronic switch performance in double heterostructure-emitter bipolar transistor
|
Guo, Der-Feng |
|
|
45 |
7 |
p. 1179-1182 |
artikel |
15 |
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
|
Wang, L.S. |
|
|
45 |
7 |
p. 1153-1157 |
artikel |
16 |
Quantum mechanics prescriptions for compound-semiconductor transistor technologies
|
Anholt, R. |
|
|
45 |
7 |
p. 1189-1197 |
artikel |
17 |
Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers
|
Zhang, Wan-rong |
|
|
45 |
7 |
p. 1183-1187 |
artikel |
18 |
SiC planar MOS-Schottky diode: a high voltage Schottky diode with low leakage current
|
Zhang, Q. |
|
|
45 |
7 |
p. 1085-1089 |
artikel |
19 |
Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantum well structures
|
Perera, A.G.U. |
|
|
45 |
7 |
p. 1121-1125 |
artikel |
20 |
Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications
|
Rack, M.J. |
|
|
45 |
7 |
p. 1199-1203 |
artikel |
21 |
Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures
|
Luo, B. |
|
|
45 |
7 |
p. 1149-1152 |
artikel |
22 |
Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs
|
Ryou, Choong-Ryul |
|
|
45 |
7 |
p. 1165-1172 |
artikel |
23 |
Transient 3D heat flow analysis for integrated circuit devices using the transmission line matrix method on a quad tree mesh
|
Smy, T. |
|
|
45 |
7 |
p. 1137-1148 |
artikel |