| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A novel experimental technique: combined gated-diode method for extracting lateral distribution of interface traps in SOI NMOSFETs
|
He, Jin
|
|
|
45 |
7 |
p. 1107-1113
|
artikel
|
| 2 |
A segmented anode, npn controlled lateral insulated gate bipolar transistor
|
Hardikar, S.
|
|
|
45 |
7 |
p. 1055-1058
|
artikel
|
| 3 |
Characteristics of LiNbO3 memory capacitors fabricated using a low thermal budget process
|
Lim, D.G
|
|
|
45 |
7 |
p. 1159-1163
|
artikel
|
| 4 |
Deep level investigation in AlGaAs/InGaAs/GaAs cryoelectronic MODFET
|
Dermoul, I.
|
|
|
45 |
7 |
p. 1059-1065
|
artikel
|
| 5 |
Dynamic triggering characteristics of SCR-type electrostatic discharge protection circuits
|
Jang, Sheng-Lyang
|
|
|
45 |
7 |
p. 1091-1097
|
artikel
|
| 6 |
Effect of temperature dependence of band gap and device constant on I–V characteristics of junction diode
|
Acharya, Y.B.
|
|
|
45 |
7 |
p. 1115-1119
|
artikel
|
| 7 |
Electrical characterization of ultrathin oxides of silicon grown by wet oxidation at 800°C
|
Bhat, V.K
|
|
|
45 |
7 |
p. 1127-1135
|
artikel
|
| 8 |
Epitaxial GaN films grown on Si(111) with varied buffer layers
|
Liaw, H.M.
|
|
|
45 |
7 |
p. 1173-1177
|
artikel
|
| 9 |
Epitaxial layer sheet resistance outside and under ohmic contacts measurements using electrostatic force microscopy
|
Bresse, J.F.
|
|
|
45 |
7 |
p. 1071-1076
|
artikel
|
| 10 |
Gate-length dependence of negative differential resistance in ridge-type InGaAs/InAlAs quantum wire field-effect transistor
|
Kim, Seong-Jin
|
|
|
45 |
7 |
p. 1099-1105
|
artikel
|
| 11 |
New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions
|
Cerdeira, A.
|
|
|
45 |
7 |
p. 1077-1080
|
artikel
|
| 12 |
Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler–Nordheim tunneling current oscillations in ultrathin MOSFETs
|
Mao, Lingfeng
|
|
|
45 |
7 |
p. 1081-1084
|
artikel
|
| 13 |
On theory of 1/f noise in semiconductors
|
Borovitskaya, E.
|
|
|
45 |
7 |
p. 1067-1069
|
artikel
|
| 14 |
Optoelectronic switch performance in double heterostructure-emitter bipolar transistor
|
Guo, Der-Feng
|
|
|
45 |
7 |
p. 1179-1182
|
artikel
|
| 15 |
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
|
Wang, L.S.
|
|
|
45 |
7 |
p. 1153-1157
|
artikel
|
| 16 |
Quantum mechanics prescriptions for compound-semiconductor transistor technologies
|
Anholt, R.
|
|
|
45 |
7 |
p. 1189-1197
|
artikel
|
| 17 |
Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers
|
Zhang, Wan-rong
|
|
|
45 |
7 |
p. 1183-1187
|
artikel
|
| 18 |
SiC planar MOS-Schottky diode: a high voltage Schottky diode with low leakage current
|
Zhang, Q.
|
|
|
45 |
7 |
p. 1085-1089
|
artikel
|
| 19 |
Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantum well structures
|
Perera, A.G.U.
|
|
|
45 |
7 |
p. 1121-1125
|
artikel
|
| 20 |
Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications
|
Rack, M.J.
|
|
|
45 |
7 |
p. 1199-1203
|
artikel
|
| 21 |
Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures
|
Luo, B.
|
|
|
45 |
7 |
p. 1149-1152
|
artikel
|
| 22 |
Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs
|
Ryou, Choong-Ryul
|
|
|
45 |
7 |
p. 1165-1172
|
artikel
|
| 23 |
Transient 3D heat flow analysis for integrated circuit devices using the transmission line matrix method on a quad tree mesh
|
Smy, T.
|
|
|
45 |
7 |
p. 1137-1148
|
artikel
|
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