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                             23 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A novel experimental technique: combined gated-diode method for extracting lateral distribution of interface traps in SOI NMOSFETs He, Jin

45 7 p. 1107-1113
artikel
2 A segmented anode, npn controlled lateral insulated gate bipolar transistor Hardikar, S.

45 7 p. 1055-1058
artikel
3 Characteristics of LiNbO3 memory capacitors fabricated using a low thermal budget process Lim, D.G

45 7 p. 1159-1163
artikel
4 Deep level investigation in AlGaAs/InGaAs/GaAs cryoelectronic MODFET Dermoul, I.

45 7 p. 1059-1065
artikel
5 Dynamic triggering characteristics of SCR-type electrostatic discharge protection circuits Jang, Sheng-Lyang

45 7 p. 1091-1097
artikel
6 Effect of temperature dependence of band gap and device constant on I–V characteristics of junction diode Acharya, Y.B.

45 7 p. 1115-1119
artikel
7 Electrical characterization of ultrathin oxides of silicon grown by wet oxidation at 800°C Bhat, V.K

45 7 p. 1127-1135
artikel
8 Epitaxial GaN films grown on Si(111) with varied buffer layers Liaw, H.M.

45 7 p. 1173-1177
artikel
9 Epitaxial layer sheet resistance outside and under ohmic contacts measurements using electrostatic force microscopy Bresse, J.F.

45 7 p. 1071-1076
artikel
10 Gate-length dependence of negative differential resistance in ridge-type InGaAs/InAlAs quantum wire field-effect transistor Kim, Seong-Jin

45 7 p. 1099-1105
artikel
11 New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions Cerdeira, A.

45 7 p. 1077-1080
artikel
12 Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler–Nordheim tunneling current oscillations in ultrathin MOSFETs Mao, Lingfeng

45 7 p. 1081-1084
artikel
13 On theory of 1/f noise in semiconductors Borovitskaya, E.

45 7 p. 1067-1069
artikel
14 Optoelectronic switch performance in double heterostructure-emitter bipolar transistor Guo, Der-Feng

45 7 p. 1179-1182
artikel
15 Photoluminescence of rapid-thermal annealed Mg-doped GaN films Wang, L.S.

45 7 p. 1153-1157
artikel
16 Quantum mechanics prescriptions for compound-semiconductor transistor technologies Anholt, R.

45 7 p. 1189-1197
artikel
17 Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers Zhang, Wan-rong

45 7 p. 1183-1187
artikel
18 SiC planar MOS-Schottky diode: a high voltage Schottky diode with low leakage current Zhang, Q.

45 7 p. 1085-1089
artikel
19 Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantum well structures Perera, A.G.U.

45 7 p. 1121-1125
artikel
20 Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications Rack, M.J.

45 7 p. 1199-1203
artikel
21 Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures Luo, B.

45 7 p. 1149-1152
artikel
22 Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs Ryou, Choong-Ryul

45 7 p. 1165-1172
artikel
23 Transient 3D heat flow analysis for integrated circuit devices using the transmission line matrix method on a quad tree mesh Smy, T.

45 7 p. 1137-1148
artikel
                             23 gevonden resultaten
 
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