| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new IGBT behavioral model
|
Oh, Hyeong-Seok
|
|
2001
|
45 |
12 |
p. 2069-2075
7 p.
|
artikel
|
| 2 |
Author Index
|
|
|
2001
|
45 |
12 |
p. III-VIII
nvt p.
|
artikel
|
| 3 |
Comparative study of metal–semiconductor contact degradation by current pulses on silicon solar cells with two contact types
|
Perez-Quintana, I.
|
|
2001
|
45 |
12 |
p. 2017-2021
5 p.
|
artikel
|
| 4 |
Copper electromigration modeling including barrier layer effect
|
Wu, W.
|
|
2001
|
45 |
12 |
p. 2011-2016
6 p.
|
artikel
|
| 5 |
Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
|
Johnson, J.W
|
|
2001
|
45 |
12 |
p. 1979-1985
7 p.
|
artikel
|
| 6 |
Effect of PECVD of SiO2 passivation layers on GaN and InGaP
|
Baik, K.H.
|
|
2001
|
45 |
12 |
p. 2093-2096
4 p.
|
artikel
|
| 7 |
Effect of Si, Mg, and Mg–Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition
|
Cho, H.K
|
|
2001
|
45 |
12 |
p. 2023-2027
5 p.
|
artikel
|
| 8 |
Electromigration subjected to Joule heating under pulsed DC stress
|
Wu, W.
|
|
2001
|
45 |
12 |
p. 2051-2056
6 p.
|
artikel
|
| 9 |
Enhancement of Cu nucleation in Cu-MOCVD by Pd sputtering pretreatment
|
Lim, Jongmin
|
|
2001
|
45 |
12 |
p. 2083-2088
6 p.
|
artikel
|
| 10 |
Impact of transport noise enhancement in scaled-down MOSFET
|
Sumino, Daijiro
|
|
2001
|
45 |
12 |
p. 1991-1997
7 p.
|
artikel
|
| 11 |
Keyword Index
|
|
|
2001
|
45 |
12 |
p. IX-XIII
nvt p.
|
artikel
|
| 12 |
Model and analysis of a delta-doping field-effect transistors utilizing an InGaP/GaAs camel-gate structure
|
Tsai, Jung-Hui
|
|
2001
|
45 |
12 |
p. 2045-2049
5 p.
|
artikel
|
| 13 |
Modeling of SiGe-base heterojunction bipolar transistor with gaussian doping distribution
|
Zaręba, A
|
|
2001
|
45 |
12 |
p. 2029-2032
4 p.
|
artikel
|
| 14 |
Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times
|
Eberhardt, Jochen
|
|
2001
|
45 |
12 |
p. 2097-2100
4 p.
|
artikel
|
| 15 |
Planar 4H- and 6H-SiC p–n diodes fabricated by selective diffusion of boron
|
Gao, Y
|
|
2001
|
45 |
12 |
p. 1987-1990
4 p.
|
artikel
|
| 16 |
Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon
|
Hilali, Mohamed
|
|
2001
|
45 |
12 |
p. 1973-1978
6 p.
|
artikel
|
| 17 |
Role of supply voltage and load capacitors in the experimental operation of small-signal MOSFET amplifiers
|
Vernon, Emerson
|
|
2001
|
45 |
12 |
p. 2033-2038
6 p.
|
artikel
|
| 18 |
Space and time resolved surface temperature distributions in Si power diodes operating under self-heating conditions
|
Hillkirk, Leonardo M
|
|
2001
|
45 |
12 |
p. 2057-2067
11 p.
|
artikel
|
| 19 |
Suppression of short channel effects by full inversion in deep sub-micron gate SOI MOSFETs
|
Hanajiri, T
|
|
2001
|
45 |
12 |
p. 2077-2081
5 p.
|
artikel
|
| 20 |
Surface recombination in ion-implanted MOSFETs
|
Mah, Mustafa Yasin
|
|
2001
|
45 |
12 |
p. 2039-2043
5 p.
|
artikel
|
| 21 |
Temperature-dependent dynamic triggering characteristics of SCR-type ESD protection circuits
|
Jang, Sheng-Lyang
|
|
2001
|
45 |
12 |
p. 2005-2009
5 p.
|
artikel
|
| 22 |
Temperature dependent photoluminescence of porous InP
|
Liu, Aimin
|
|
2001
|
45 |
12 |
p. 2089-2092
4 p.
|
artikel
|
| 23 |
Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET
|
Wu, Jau-Yi
|
|
2001
|
45 |
12 |
p. 1999-2003
5 p.
|
artikel
|
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