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                                       Details for article 5 of 23 found articles
 
 
  Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
 
 
Title: Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Author: Johnson, J.W
Baca, A.G
Briggs, R.D
Shul, R.J
Wendt, J.R
Monier, C
Ren, F
Pearton, S.J
Dabiran, A.M
Wowchack, A.M
Polley, C.J
Chow, P.P
Appeared in: Solid-state electronics
Paging: Volume 45 (2001) nr. 12 pages 7 p.
Year: 2001
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 23 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands