| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Bandgap engineering in vertical P-MOSFETs
|
Chen, Xiangdong
|
|
2001
|
45 |
11 |
p. 1939-1943
5 p.
|
artikel
|
| 2 |
Calculation of figures of merit of Si/Si1−x−y Ge x C y/Si HBTs and their optimization
|
Biswas, A.
|
|
2001
|
45 |
11 |
p. 1885-1889
5 p.
|
artikel
|
| 3 |
Charge trapping characteristics of ultrathin oxynitrides on Si/Si1−x−y Ge xCy/Si heterolayers
|
Ray, S.K.
|
|
2001
|
45 |
11 |
p. 1951-1955
5 p.
|
artikel
|
| 4 |
Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1−x Ge x /Si buffer layers
|
Yousif, M.Y.A
|
|
2001
|
45 |
11 |
p. 1869-1874
6 p.
|
artikel
|
| 5 |
Ellipsometric investigation of strain reduction in Si1−x−y Ge x C y layers compared to Si1−xGex layers on silicon
|
Mukerjee, Subroto
|
|
2001
|
45 |
11 |
p. 1875-1877
3 p.
|
artikel
|
| 6 |
Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures
|
Konle, J.
|
|
2001
|
45 |
11 |
p. 1921-1925
5 p.
|
artikel
|
| 7 |
Epitaxy and device behaviour of collector-up SiGe HBTs with a partial p-type collector
|
van den Oever, L.C.M.
|
|
2001
|
45 |
11 |
p. 1899-1904
6 p.
|
artikel
|
| 8 |
High power compact 16 GHz integrated oscillator design using active reactances
|
Sönmez, E.
|
|
2001
|
45 |
11 |
p. 1909-1913
5 p.
|
artikel
|
| 9 |
Incorporation and optical activation of erbium in strained silicon–germanium structures
|
Huda, M.Q
|
|
2001
|
45 |
11 |
p. 1927-1930
4 p.
|
artikel
|
| 10 |
Measurement and simulation of boron diffusion in strained Si1−x Ge x epitaxial layers with a linearly graded germanium profile
|
Rajendran, K.
|
|
2001
|
45 |
11 |
p. 1879-1884
6 p.
|
artikel
|
| 11 |
Noise behavior in SiGe devices
|
Régis, M.
|
|
2001
|
45 |
11 |
p. 1891-1897
7 p.
|
artikel
|
| 12 |
N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD
|
Tan, C.S.
|
|
2001
|
45 |
11 |
p. 1945-1949
5 p.
|
artikel
|
| 13 |
On low-frequency noise of polycrystalline Ge x Si1−x for sub-micron CMOS technologies
|
Chen, X.Y
|
|
2001
|
45 |
11 |
p. 1967-1971
5 p.
|
artikel
|
| 14 |
Performance of SiGe-HBTs and its amplifiers
|
Senapati, B.
|
|
2001
|
45 |
11 |
p. 1905-1908
4 p.
|
artikel
|
| 15 |
Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1−x Ge x thin films
|
Natarajan, A.
|
|
2001
|
45 |
11 |
p. 1957-1961
5 p.
|
artikel
|
| 16 |
Recent critical issues in Si/Si1−x Ge x /Si heterostructure FET devices
|
Yousif, M.Y.A.
|
|
2001
|
45 |
11 |
p. 1931-1937
7 p.
|
artikel
|
| 17 |
Relaxation and photoluminscence of different post-processed Si/Si1−x Ge x quantum well structures grown by CVD
|
Myrberg, T.
|
|
2001
|
45 |
11 |
p. 1915-1919
5 p.
|
artikel
|
| 18 |
Silicon–germanium materials and devices
|
Maiti, Chinmay K
|
|
2001
|
45 |
11 |
p. 1867-1868
2 p.
|
artikel
|
| 19 |
Structural characterisation of polycrystalline SiGe thin film
|
Teh, L.K.
|
|
2001
|
45 |
11 |
p. 1963-1966
4 p.
|
artikel
|
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