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Journal description
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Details for article 4 of 19 found articles
| Title: |
Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1−x Ge x /Si buffer layers |
| Author: |
Yousif, M.Y.A Nur, O Willander, M Patel, C.J Hernandez, C Campidelli, Y Bensahel, D Kyutt, R.N |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 45 (2001) nr. 11 pages 6 p. |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 19 found articles
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