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                             24 results found
no title author magazine year volume issue page(s) type
1 Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films Hefyene, Nasser
2000
44 10 p. 1711-1715
5 p.
article
2 A DC current stress method to improve the voltage coefficient of resistance of the polysilicon resistor in high voltage CMOS technology Chen, Chung-Hui
2000
44 10 p. 1743-1746
4 p.
article
3 A MOSFET gate current model with the direct tunneling mechanism Sheu, Chorng-Jye
2000
44 10 p. 1819-1824
6 p.
article
4 An analytical model for the 3D-RESURF effect Ng, R.
2000
44 10 p. 1753-1764
12 p.
article
5 An electrostatic discharge failure mechanism in semiconductor devices, with applications to electrostatic discharge measurements using transmission line pulsing technique Lee, J.C
2000
44 10 p. 1771-1781
11 p.
article
6 A physics-based electron gate current model for fully depleted SOI MOSFETs Sheu, Chorng-Jye
2000
44 10 p. 1799-1806
8 p.
article
7 Comprehensive investigations of high voltage non-punch-through double gate-injection enhanced gate transistor Bai, Yuming
2000
44 10 p. 1783-1787
5 p.
article
8 Determination of SiO2–Si interface trap level density (D it) by vibrating capacitor method Mizsei, János
2000
44 10 p. 1825-1831
7 p.
article
9 Effects of high current conduction in sub-micron Ti-silicided films Gan, C.L.
2000
44 10 p. 1837-1845
9 p.
article
10 Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction Zhu, Shiyang
2000
44 10 p. 1807-1818
12 p.
article
11 Electrical fatigue response for ferroelectric ceramics under electrical cyclic load Qian, R.
2000
44 10 p. 1717-1722
6 p.
article
12 Exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances Ortiz-Conde, Adelmo
2000
44 10 p. 1861-1864
4 p.
article
13 Fast gate turn-off in a merged thyristor-like structure Gordion, I.M.
2000
44 10 p. 1723-1732
10 p.
article
14 Field emission characteristic studies of chemical vapor deposited diamond films Chen, Chi-Lin
2000
44 10 p. 1733-1741
9 p.
article
15 Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics Park, Jae-Woo
2000
44 10 p. 1847-1852
6 p.
article
16 Improved ohmic contact on n-type 4H-SiC Gao, Y
2000
44 10 p. 1875-1878
4 p.
article
17 Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGe HBT DC and HF characteristics Malm, B.Gunnar
2000
44 10 p. 1747-1752
6 p.
article
18 On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides Haque, A.
2000
44 10 p. 1833-1836
4 p.
article
19 Optoelectronic properties of CdO/Si photodetectors Ortega, Mauricio
2000
44 10 p. 1765-1769
5 p.
article
20 Resonant-tunneling-diode relaxation oscillator Chen, C.L
2000
44 10 p. 1853-1856
4 p.
article
21 Sidegating mechanism as a function of the sidegate-to-channel spacing Prokhorov, Eugenio F.
2000
44 10 p. 1857-1860
4 p.
article
22 Similarity relation for I–V characteristics of FETs with different channel shape Dobrovolsky, V.N.
2000
44 10 p. 1865-1867
3 p.
article
23 Thermal analysis of solid-state devices and circuits: an analytical approach Rinaldi, N.
2000
44 10 p. 1789-1798
10 p.
article
24 Trade-off between the Kirk effect and the breakdown performance in resurfed lateral bipolar transistors for high voltage, high frequency applications Cao, G.J
2000
44 10 p. 1869-1873
5 p.
article
                             24 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands