| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films
|
Hefyene, Nasser
|
|
2000
|
44 |
10 |
p. 1711-1715
5 p.
|
article
|
| 2 |
A DC current stress method to improve the voltage coefficient of resistance of the polysilicon resistor in high voltage CMOS technology
|
Chen, Chung-Hui
|
|
2000
|
44 |
10 |
p. 1743-1746
4 p.
|
article
|
| 3 |
A MOSFET gate current model with the direct tunneling mechanism
|
Sheu, Chorng-Jye
|
|
2000
|
44 |
10 |
p. 1819-1824
6 p.
|
article
|
| 4 |
An analytical model for the 3D-RESURF effect
|
Ng, R.
|
|
2000
|
44 |
10 |
p. 1753-1764
12 p.
|
article
|
| 5 |
An electrostatic discharge failure mechanism in semiconductor devices, with applications to electrostatic discharge measurements using transmission line pulsing technique
|
Lee, J.C
|
|
2000
|
44 |
10 |
p. 1771-1781
11 p.
|
article
|
| 6 |
A physics-based electron gate current model for fully depleted SOI MOSFETs
|
Sheu, Chorng-Jye
|
|
2000
|
44 |
10 |
p. 1799-1806
8 p.
|
article
|
| 7 |
Comprehensive investigations of high voltage non-punch-through double gate-injection enhanced gate transistor
|
Bai, Yuming
|
|
2000
|
44 |
10 |
p. 1783-1787
5 p.
|
article
|
| 8 |
Determination of SiO2–Si interface trap level density (D it) by vibrating capacitor method
|
Mizsei, János
|
|
2000
|
44 |
10 |
p. 1825-1831
7 p.
|
article
|
| 9 |
Effects of high current conduction in sub-micron Ti-silicided films
|
Gan, C.L.
|
|
2000
|
44 |
10 |
p. 1837-1845
9 p.
|
article
|
| 10 |
Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction
|
Zhu, Shiyang
|
|
2000
|
44 |
10 |
p. 1807-1818
12 p.
|
article
|
| 11 |
Electrical fatigue response for ferroelectric ceramics under electrical cyclic load
|
Qian, R.
|
|
2000
|
44 |
10 |
p. 1717-1722
6 p.
|
article
|
| 12 |
Exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances
|
Ortiz-Conde, Adelmo
|
|
2000
|
44 |
10 |
p. 1861-1864
4 p.
|
article
|
| 13 |
Fast gate turn-off in a merged thyristor-like structure
|
Gordion, I.M.
|
|
2000
|
44 |
10 |
p. 1723-1732
10 p.
|
article
|
| 14 |
Field emission characteristic studies of chemical vapor deposited diamond films
|
Chen, Chi-Lin
|
|
2000
|
44 |
10 |
p. 1733-1741
9 p.
|
article
|
| 15 |
Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics
|
Park, Jae-Woo
|
|
2000
|
44 |
10 |
p. 1847-1852
6 p.
|
article
|
| 16 |
Improved ohmic contact on n-type 4H-SiC
|
Gao, Y
|
|
2000
|
44 |
10 |
p. 1875-1878
4 p.
|
article
|
| 17 |
Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGe HBT DC and HF characteristics
|
Malm, B.Gunnar
|
|
2000
|
44 |
10 |
p. 1747-1752
6 p.
|
article
|
| 18 |
On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides
|
Haque, A.
|
|
2000
|
44 |
10 |
p. 1833-1836
4 p.
|
article
|
| 19 |
Optoelectronic properties of CdO/Si photodetectors
|
Ortega, Mauricio
|
|
2000
|
44 |
10 |
p. 1765-1769
5 p.
|
article
|
| 20 |
Resonant-tunneling-diode relaxation oscillator
|
Chen, C.L
|
|
2000
|
44 |
10 |
p. 1853-1856
4 p.
|
article
|
| 21 |
Sidegating mechanism as a function of the sidegate-to-channel spacing
|
Prokhorov, Eugenio F.
|
|
2000
|
44 |
10 |
p. 1857-1860
4 p.
|
article
|
| 22 |
Similarity relation for I–V characteristics of FETs with different channel shape
|
Dobrovolsky, V.N.
|
|
2000
|
44 |
10 |
p. 1865-1867
3 p.
|
article
|
| 23 |
Thermal analysis of solid-state devices and circuits: an analytical approach
|
Rinaldi, N.
|
|
2000
|
44 |
10 |
p. 1789-1798
10 p.
|
article
|
| 24 |
Trade-off between the Kirk effect and the breakdown performance in resurfed lateral bipolar transistors for high voltage, high frequency applications
|
Cao, G.J
|
|
2000
|
44 |
10 |
p. 1869-1873
5 p.
|
article
|
Journal description