| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of high-voltage trench bipolar junction diode (TBJD)
|
You, Budong
|
|
1999
|
43 |
9 |
p. 1777-1783
7 p.
|
artikel
|
| 2 |
Analysis of 0.5 μm channel Al/WSix/Poly-Si gate performance in high-frequency band Si power MOSFETs with process/device/circuit continuous simulation
|
Kataoka, M
|
|
1999
|
43 |
9 |
p. 1689-1694
6 p.
|
artikel
|
| 3 |
An energy relaxation time model for device simulation
|
Gonzalez, B.
|
|
1999
|
43 |
9 |
p. 1791-1795
5 p.
|
artikel
|
| 4 |
A new expression of excess stress and the stability of buried strained heterostructures
|
Jin, Zhi
|
|
1999
|
43 |
9 |
p. 1735-1739
5 p.
|
artikel
|
| 5 |
A numerical investigation into the effect of the p-well/n-substrate injection efficiency on the uniformity of electron injection during substrate hot electron experiments
|
Nuttall, K.
|
|
1999
|
43 |
9 |
p. 1665-1671
7 p.
|
artikel
|
| 6 |
Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress
|
Samanta, Piyas
|
|
1999
|
43 |
9 |
p. 1677-1687
11 p.
|
artikel
|
| 7 |
Channel length scaling of 1/f noise in 0.18 μm technology MDD n-MOSFETs
|
Çelik-Butler, Zeynep
|
|
1999
|
43 |
9 |
p. 1695-1701
7 p.
|
artikel
|
| 8 |
Correspondence
|
|
|
1999
|
43 |
9 |
p. 1817-1820
4 p.
|
artikel
|
| 9 |
Detection and fitting of the soft breakdown failure mode in MOS structures
|
Miranda, E
|
|
1999
|
43 |
9 |
p. 1801-1805
5 p.
|
artikel
|
| 10 |
Effect of strain on band structure and electron transport in InAs
|
Hori, Yasuko
|
|
1999
|
43 |
9 |
p. 1813-1816
4 p.
|
artikel
|
| 11 |
Fabrication of the buried channel polycrystalline silicon TFT
|
Park, Cheol-Min
|
|
1999
|
43 |
9 |
p. 1785-1789
5 p.
|
artikel
|
| 12 |
1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations
|
Chen, X.Y.
|
|
1999
|
43 |
9 |
p. 1715-1724
10 p.
|
artikel
|
| 13 |
Formation of shallow n+p junctions by phosphorus implantation into thin polycrystalline-Si films on Si substrates and subsequent cobalt silicidation
|
Juang, M.H
|
|
1999
|
43 |
9 |
p. 1763-1767
5 p.
|
artikel
|
| 14 |
Investigation of the optical, temperature dependent free-carrier absorption of a bipolar electron-hole plasma in silicon
|
Mnatsakanov, T.T
|
|
1999
|
43 |
9 |
p. 1703-1708
6 p.
|
artikel
|
| 15 |
Low-frequency gate current noise of InP based HEMTs
|
Simoen, E.
|
|
1999
|
43 |
9 |
p. 1797-1800
4 p.
|
artikel
|
| 16 |
Mechanism of high density plasma processes for ion-driven etching of materials
|
Lee, J.W.
|
|
1999
|
43 |
9 |
p. 1769-1775
7 p.
|
artikel
|
| 17 |
Nonequilibrium electron relaxation in composite thin film containing silver nano-scale particles
|
Wu, J.L.
|
|
1999
|
43 |
9 |
p. 1755-1761
7 p.
|
artikel
|
| 18 |
Photoresponse of Si1−x Ge x heteroepitaxial p–i–n photodiodes
|
Chattopadhyay, S.
|
|
1999
|
43 |
9 |
p. 1741-1745
5 p.
|
artikel
|
| 19 |
Schottky and ohmic contacts to doped Si1−x−y Ge x C y layers
|
Peterson, Jeff J.
|
|
1999
|
43 |
9 |
p. 1725-1734
10 p.
|
artikel
|
| 20 |
Static characteristics of high-barrier Schottky diode under high injection level
|
Prokopyev, A.I.
|
|
1999
|
43 |
9 |
p. 1747-1753
7 p.
|
artikel
|
| 21 |
The study on the growth and properties of Mg doped and Mg–Si codoped p-type GaN
|
Kim, Ki Soo
|
|
1999
|
43 |
9 |
p. 1807-1812
6 p.
|
artikel
|
| 22 |
Transport properties in microcrystalline silicon solar cells under AM1.5 illumination analysed by two-dimensional numerical simulation
|
Fantoni, Alessandro
|
|
1999
|
43 |
9 |
p. 1709-1714
6 p.
|
artikel
|
| 23 |
Tunnelling-assisted generation-recombination in pn a-Si junctions
|
Furlan, J.
|
|
1999
|
43 |
9 |
p. 1673-1676
4 p.
|
artikel
|
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