| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abnormal transconductance and transient effects in partially depleted SOI MOSFETs
|
Zhang, Yonglin
|
|
1999
|
43 |
1 |
p. 51-56
6 p.
|
artikel
|
| 2 |
A novel approach for modeling accumulation-mode SOI MOSFETs
|
Jang, Sheng-Lyang
|
|
1999
|
43 |
1 |
p. 87-96
10 p.
|
artikel
|
| 3 |
Comparison of GaAs-based heterostructure n-channel transistors to Si in complementary processes
|
Fulkerson, David E.
|
|
1999
|
43 |
1 |
p. 65-71
7 p.
|
artikel
|
| 4 |
Detection of DX-like trapping centres in delta-doped pseudomorphic In x Ga1−x As quantum wells
|
Thordson, J.V
|
|
1999
|
43 |
1 |
p. 141-145
5 p.
|
artikel
|
| 5 |
Diffusion coefficient of indium in Si substrates and analytical redistribution profile model
|
Suzuki, Kunihiro
|
|
1999
|
43 |
1 |
p. 27-31
5 p.
|
artikel
|
| 6 |
2D simulation of the effects of transient enhanced boron out-diffusion from base of SiGe HBT due to an extrinsic base implant
|
Hashim, Md.R
|
|
1999
|
43 |
1 |
p. 131-140
10 p.
|
artikel
|
| 7 |
Effect of extreme surface roughness on the electrical characteristics of ultra-thin gate oxides
|
Houssa, M
|
|
1999
|
43 |
1 |
p. 159-167
9 p.
|
artikel
|
| 8 |
Extraction of off-set region length for off-set gate MOSFETs
|
Terada, Kazuo
|
|
1999
|
43 |
1 |
p. 97-102
6 p.
|
artikel
|
| 9 |
1/f noise of avalanche noise
|
Zaklikiewicz, A.M
|
|
1999
|
43 |
1 |
p. 11-15
5 p.
|
artikel
|
| 10 |
Implications of hole vs electron transport properties for high speed Pnp heterojunction bipolar transistors
|
Datta, S
|
|
1999
|
43 |
1 |
p. 73-79
7 p.
|
artikel
|
| 11 |
Large area electron beam induced current imaging with a single contact
|
Ong, V.K.S
|
|
1999
|
43 |
1 |
p. 41-50
10 p.
|
artikel
|
| 12 |
Low-frequency capacitance–voltage characterization of deep levels in film–buffer layer–substrate GaAs structures
|
Kostylev, Sergey A.
|
|
1999
|
43 |
1 |
p. 169-176
8 p.
|
artikel
|
| 13 |
Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's
|
Chiang, T.K.
|
|
1999
|
43 |
1 |
p. 123-129
7 p.
|
artikel
|
| 14 |
Noise analysis in devices under nonlinear operation
|
Cappy, Alain
|
|
1999
|
43 |
1 |
p. 21-26
6 p.
|
artikel
|
| 15 |
Noise in voltage-biased scaled semiconductor laser diodes
|
Thiyagarajan, S.M.K.
|
|
1999
|
43 |
1 |
p. 33-39
7 p.
|
artikel
|
| 16 |
Ohmic contacts to n-type and p-type ZnSe
|
Park, M.R.
|
|
1999
|
43 |
1 |
p. 113-121
9 p.
|
artikel
|
| 17 |
Optical characterization and metal–nonmetal transition of boron-doped Si1−x Ge x alloy
|
Ferreira da Silva, A.
|
|
1999
|
43 |
1 |
p. 17-20
4 p.
|
artikel
|
| 18 |
Photoluminescence intensity enhancement by electron beam irradiation into GaAs quantum wells
|
Murata, Tomohiro
|
|
1999
|
43 |
1 |
p. 147-152
6 p.
|
artikel
|
| 19 |
Simulation of quantum transport by applying second-order differencing scheme to Wigner function model including spatially varying effective mass
|
Kim, Kyoung-Youm
|
|
1999
|
43 |
1 |
p. 81-86
6 p.
|
artikel
|
| 20 |
Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide
|
Kim, Jong-Hyun
|
|
1999
|
43 |
1 |
p. 57-63
7 p.
|
artikel
|
| 21 |
The energy level of the EL2 defect in GaAs
|
Bourgoin, J.C.
|
|
1999
|
43 |
1 |
p. 153-158
6 p.
|
artikel
|
| 22 |
The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier
|
Mahalingam, Srikanth
|
|
1999
|
43 |
1 |
p. 1-9
9 p.
|
artikel
|
| 23 |
Thin p/p+ epitaxial layer characterization with the pulsed MOS capacitor
|
Lee, Sang-Yun
|
|
1999
|
43 |
1 |
p. 103-111
9 p.
|
artikel
|
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