|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 6 of 23 found articles
| Title: |
2D simulation of the effects of transient enhanced boron out-diffusion from base of SiGe HBT due to an extrinsic base implant |
| Author: |
Hashim, Md.R Lever, R.F Ashburn, P |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 43 (1999) nr. 1 pages 10 p. |
| Year: |
1999 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 6 of 23 found articles
| << previous | next >> |