| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical capacitance model for submicron accumulation-mode SOI MOS devices
|
Su, K.W.
|
|
1998
|
42 |
4 |
p. 513-522
10 p.
|
artikel
|
| 2 |
Annealing effects of polycrystalline silicon gate on electrical properties of thin gate oxide
|
Cho, Won-Ju
|
|
1998
|
42 |
4 |
p. 557-566
10 p.
|
artikel
|
| 3 |
A novel analytical model for short channel heterostructure field effect transistors
|
Song, Sang-Ho
|
|
1998
|
42 |
4 |
p. 605-612
8 p.
|
artikel
|
| 4 |
BASE TRANSIT TIME MINIMIZATION WITH FIXED BASE DOPANT DOSE
|
Winterton, S.S.
|
|
1998
|
42 |
4 |
p. 667-670
4 p.
|
artikel
|
| 5 |
CORONA-OXIDE-SEMICONDUCTOR device CHARACTERIZATION
|
Schroder, D.K.
|
|
1998
|
42 |
4 |
p. 505-512
8 p.
|
artikel
|
| 6 |
DC characterisation of HBTs using the observed kink effect on the base current
|
Sotoodeh, M.
|
|
1998
|
42 |
4 |
p. 531-539
9 p.
|
artikel
|
| 7 |
Determination of excess current due to impact ionization in polycrystalline silicon thin-film transistors
|
Policicchio, I.
|
|
1998
|
42 |
4 |
p. 613-618
6 p.
|
artikel
|
| 8 |
Determination of polysilicon solar cell parameters using electrical short-circuit current decay method
|
Ba, B.
|
|
1998
|
42 |
4 |
p. 541-545
5 p.
|
artikel
|
| 9 |
Determination of the origin of the series resistance through electroluminescence measurements of GaAs and Al x Ga1−x As solar cells and LEDs
|
Reyna, Rosa F.
|
|
1998
|
42 |
4 |
p. 567-571
5 p.
|
artikel
|
| 10 |
Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy
|
Cova, P.
|
|
1998
|
42 |
4 |
p. 477-485
9 p.
|
artikel
|
| 11 |
EXTENSION OF THE McNUTT-SAH METHOD FOR MEASURING THIN OXIDE THICKNESSES OF MOS DEVICES
|
Walstra, Steven V.
|
|
1998
|
42 |
4 |
p. 671-673
3 p.
|
artikel
|
| 12 |
High-frequency noise in heterojunction bipolar transistors
|
Escotte, L.
|
|
1998
|
42 |
4 |
p. 661-663
3 p.
|
artikel
|
| 13 |
High temperature thermally stimulated currents analysis of CVD diamond films
|
Borchi, E
|
|
1998
|
42 |
4 |
p. 674-676
3 p.
|
artikel
|
| 14 |
IS PHYSICALLY SOUND AND PREDICTIVE MODELING OF NMOS SUBSTRATE CURRENTS POSSIBLE?
|
Jungemann, C.
|
|
1998
|
42 |
4 |
p. 647-655
9 p.
|
artikel
|
| 15 |
Metal/n-CdTe interfaces: A study of electrical contacts by deep level transient spectroscopy and ballistic electron emission microscopy
|
Dharmadasa, I.M.
|
|
1998
|
42 |
4 |
p. 595-604
10 p.
|
artikel
|
| 16 |
Performance of random-walk capacitance extractors for IC interconnects: A numerical study
|
Le Coz, Y.L.
|
|
1998
|
42 |
4 |
p. 581-588
8 p.
|
artikel
|
| 17 |
Properties of Si donors and persistent photoconductivity in AlGaN
|
Polyakov, A.Y.
|
|
1998
|
42 |
4 |
p. 627-635
9 p.
|
artikel
|
| 18 |
Reverse blocking lateral MOS-gated switches for ac power control applications
|
Mehrotra, Manoj
|
|
1998
|
42 |
4 |
p. 573-579
7 p.
|
artikel
|
| 19 |
Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy
|
Polyakov, A.Y
|
|
1998
|
42 |
4 |
p. 637-646
10 p.
|
artikel
|
| 20 |
Selective laser annealing (SELA) used in the fabrication of Sub-0.1 μm MOSFETs
|
Tsukamoto, Hironori
|
|
1998
|
42 |
4 |
p. 547-556
10 p.
|
artikel
|
| 21 |
Strained-Si channel heterojunction p-MOSFETs
|
Armstrong, G.A.
|
|
1998
|
42 |
4 |
p. 487-498
12 p.
|
artikel
|
| 22 |
Suppression of hot-carrier-induced degradation in n-mosfets at low temperatures by N2O-nitridation of gate oxide
|
Lai, P.T
|
|
1998
|
42 |
4 |
p. 619-626
8 p.
|
artikel
|
| 23 |
THE CARNOT FACTOR IN SOLAR-CELL THEORY
|
Landsberg, Peter T.
|
|
1998
|
42 |
4 |
p. 657-659
3 p.
|
artikel
|
| 24 |
The dual MOS-gated thyristor (DMGT) structure
|
Flores, D.
|
|
1998
|
42 |
4 |
p. 523-529
7 p.
|
artikel
|
| 25 |
Theory for the determination of backside contact resistance of semiconductor wafers from surface potential measurements
|
Tan, L.S.
|
|
1998
|
42 |
4 |
p. 589-594
6 p.
|
artikel
|
| 26 |
Transit-time-limited shot noise due to carrier generation in semiconductors: a new approach
|
Sato, Y.
|
|
1998
|
42 |
4 |
p. 664-666
3 p.
|
artikel
|
| 27 |
Two-dimensional confinement effects in gate-all-around (GAA) MOSFETs
|
Baie, X.
|
|
1998
|
42 |
4 |
p. 499-504
6 p.
|
artikel
|
| 28 |
VARIATIONS IN THE COX AND STRACK CURVE FOR NON-ZERO METAL RESISTANCE
|
Ahmad, M.
|
|
1998
|
42 |
4 |
p. 473-476
4 p.
|
artikel
|
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