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                             28 results found
no title author magazine year volume issue page(s) type
1 Analytical capacitance model for submicron accumulation-mode SOI MOS devices Su, K.W.
 1998
 42 4 p. 513-522
10 p.
 article
2 Annealing effects of polycrystalline silicon gate on electrical properties of thin gate oxide Cho, Won-Ju
 1998
 42 4 p. 557-566
10 p.
 article
3 A novel analytical model for short channel heterostructure field effect transistors Song, Sang-Ho
 1998
 42 4 p. 605-612
8 p.
 article
4 BASE TRANSIT TIME MINIMIZATION WITH FIXED BASE DOPANT DOSE Winterton, S.S.
 1998
 42 4 p. 667-670
4 p.
 article
5 CORONA-OXIDE-SEMICONDUCTOR device CHARACTERIZATION Schroder, D.K.
 1998
 42 4 p. 505-512
8 p.
 article
6 DC characterisation of HBTs using the observed kink effect on the base current Sotoodeh, M.
 1998
 42 4 p. 531-539
9 p.
 article
7 Determination of excess current due to impact ionization in polycrystalline silicon thin-film transistors Policicchio, I.
 1998
 42 4 p. 613-618
6 p.
 article
8 Determination of polysilicon solar cell parameters using electrical short-circuit current decay method Ba, B.
 1998
 42 4 p. 541-545
5 p.
 article
9 Determination of the origin of the series resistance through electroluminescence measurements of GaAs and Al x Ga1−x As solar cells and LEDs Reyna, Rosa F.
 1998
 42 4 p. 567-571
5 p.
 article
10 Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy Cova, P.
 1998
 42 4 p. 477-485
9 p.
 article
11 EXTENSION OF THE McNUTT-SAH METHOD FOR MEASURING THIN OXIDE THICKNESSES OF MOS DEVICES Walstra, Steven V.
 1998
 42 4 p. 671-673
3 p.
 article
12 High-frequency noise in heterojunction bipolar transistors Escotte, L.
 1998
 42 4 p. 661-663
3 p.
 article
13 High temperature thermally stimulated currents analysis of CVD diamond films Borchi, E
 1998
 42 4 p. 674-676
3 p.
 article
14 IS PHYSICALLY SOUND AND PREDICTIVE MODELING OF NMOS SUBSTRATE CURRENTS POSSIBLE? Jungemann, C.
 1998
 42 4 p. 647-655
9 p.
 article
15 Metal/n-CdTe interfaces: A study of electrical contacts by deep level transient spectroscopy and ballistic electron emission microscopy Dharmadasa, I.M.
 1998
 42 4 p. 595-604
10 p.
 article
16 Performance of random-walk capacitance extractors for IC interconnects: A numerical study Le Coz, Y.L.
 1998
 42 4 p. 581-588
8 p.
 article
17 Properties of Si donors and persistent photoconductivity in AlGaN Polyakov, A.Y.
 1998
 42 4 p. 627-635
9 p.
 article
18 Reverse blocking lateral MOS-gated switches for ac power control applications Mehrotra, Manoj
 1998
 42 4 p. 573-579
7 p.
 article
19 Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy Polyakov, A.Y
 1998
 42 4 p. 637-646
10 p.
 article
20 Selective laser annealing (SELA) used in the fabrication of Sub-0.1 μm MOSFETs Tsukamoto, Hironori
 1998
 42 4 p. 547-556
10 p.
 article
21 Strained-Si channel heterojunction p-MOSFETs Armstrong, G.A.
 1998
 42 4 p. 487-498
12 p.
 article
22 Suppression of hot-carrier-induced degradation in n-mosfets at low temperatures by N2O-nitridation of gate oxide Lai, P.T
 1998
 42 4 p. 619-626
8 p.
 article
23 THE CARNOT FACTOR IN SOLAR-CELL THEORY Landsberg, Peter T.
 1998
 42 4 p. 657-659
3 p.
 article
24 The dual MOS-gated thyristor (DMGT) structure Flores, D.
 1998
 42 4 p. 523-529
7 p.
 article
25 Theory for the determination of backside contact resistance of semiconductor wafers from surface potential measurements Tan, L.S.
 1998
 42 4 p. 589-594
6 p.
 article
26 Transit-time-limited shot noise due to carrier generation in semiconductors: a new approach Sato, Y.
 1998
 42 4 p. 664-666
3 p.
 article
27 Two-dimensional confinement effects in gate-all-around (GAA) MOSFETs Baie, X.
 1998
 42 4 p. 499-504
6 p.
 article
28 VARIATIONS IN THE COX AND STRACK CURVE FOR NON-ZERO METAL RESISTANCE Ahmad, M.
 1998
 42 4 p. 473-476
4 p.
 article
                             28 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands