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                             51 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A study on barrier height of AuAl x Ga1 − x N Schottky diodes in the range 0 ≤ x ≤ 0.20 Mohammad Rezaul Huque Khan,
 1997
 41 2 p. 287-294
8 p.
 artikel
2 Author index 1997
 41 2 p. I-II
nvt p.
 artikel
3 Band-gap bowing in Ga1−x In xN alloys Lambrecht, Walter R.L.
 1997
 41 2 p. 195-199
5 p.
 artikel
4 Bandgap energy of cubic GaN Okumura, H.
 1997
 41 2 p. 201-204
4 p.
 artikel
5 Characterization of nitridated layers and their effect on the growth and quality of GaN Uchida, K.
 1997
 41 2 p. 135-139
5 p.
 artikel
6 Committees 1997
 41 2 p. x-
1 p.
 artikel
7 Critical layer thickness of GaN thin layers embedded in GaAs Sato, Michio
 1997
 41 2 p. 323-326
4 p.
 artikel
8 Cubic GaN formation using dimethylhydrazine and an etching method Yoshida, Seikoh
 1997
 41 2 p. 327-331
5 p.
 artikel
9 Dependence of the HVPE GaN epilayer on GaN buffer layer for GaN direct growth on (001) GaAs substrate Tsuchiya, Harutoshi
 1997
 41 2 p. 333-338
6 p.
 artikel
10 Dynamical study of the yellow luminescence band in GaN Hoffmann, A.
 1997
 41 2 p. 275-278
4 p.
 artikel
11 First principles calculation of effective mass parameters of GaN Suzuki, Masakatsu
 1997
 41 2 p. 271-274
4 p.
 artikel
12 Foreword Fujishiro, Shiro
 1997
 41 2 p. viii-
1 p.
 artikel
13 Formation and etching of thin nitride layers on GaAs using atomic nitrogen and hydrogen Makimoto, Toshiki
 1997
 41 2 p. 345-347
3 p.
 artikel
14 Gallium incorporation kinetics during gas source molecular beam epitaxy growth of GaN Evans, Keith R.
 1997
 41 2 p. 339-343
5 p.
 artikel
15 GaNAs grown by gas source molecular beam epitaxy Kondow, M.
 1997
 41 2 p. 209-212
4 p.
 artikel
16 GaN epitaxial growth on neodium gallate substrates Okazaki, H.
 1997
 41 2 p. 263-266
4 p.
 artikel
17 GaN FETs for microwave and high-temperature applications Binari, Steven C.
 1997
 41 2 p. 177-180
4 p.
 artikel
18 Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization Davis, Robert F.
 1997
 41 2 p. 129-134
6 p.
 artikel
19 Heteroepitaxial growth of InN on Si(111) using a GaAs intermediate layer Yamamoto, Akio
 1997
 41 2 p. 149-154
6 p.
 artikel
20 Influence of the V III molar ratio on the structural and electronic properties of MOVPE grown GaN Briot, O.
 1997
 41 2 p. 315-317
3 p.
 artikel
21 Interplay between growth kinetics and material quality of cubic GaN Ploog, K.H.
 1997
 41 2 p. 235-237
3 p.
 artikel
22 Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures Scholz, F.
 1997
 41 2 p. 141-144
4 p.
 artikel
23 Low resistance ohmic contact to n-GaN with a separate layer method Wu, Y.-F.
 1997
 41 2 p. 165-168
4 p.
 artikel
24 MBE grown high quality GaN films and devices Kim, W.
 1997
 41 2 p. 169-175
7 p.
 artikel
25 MBE growth and properties of GaN on GaN/SiC substrates Johnson, M.A.L.
 1997
 41 2 p. 213-218
6 p.
 artikel
26 Melt-back etching of GaN Kaneko, Yawara
 1997
 41 2 p. 295-298
4 p.
 artikel
27 Microdisk laser structures formed in III–V nitride epilayers Zavada, J.M.
 1997
 41 2 p. 353-357
5 p.
 artikel
28 MOCVD growth of InAsN for infrared applications Naoi, Hiroyuki
 1997
 41 2 p. 319-321
3 p.
 artikel
29 Morphology of twinned GaN grown on (11·0) sapphire substrates Kato, T.
 1997
 41 2 p. 227-229
3 p.
 artikel
30 MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer Shimizu, Masaya
 1997
 41 2 p. 145-147
3 p.
 artikel
31 Nitrogen concentration dependence of photoluminescence decay time in GaP1−x N x alloys Yaguchi, Hiroyuki
 1997
 41 2 p. 231-233
3 p.
 artikel
32 Nitrogen radical densities during GaN growth by molecular beam epitaxy, plasma-assisted metalorganic chemical vapor deposition, and conventional metalorganic chemical vapor deposition Sato, Michio
 1997
 41 2 p. 223-226
4 p.
 artikel
33 Optical and magnetic resonance characterization of undoped and doped wurtzite GaN films deposited on sapphire substrates Freitas Jr, J.A.
 1997
 41 2 p. 185-188
4 p.
 artikel
34 Optical characterisation of GaN and related materials Monemar, B.
 1997
 41 2 p. 181-184
4 p.
 artikel
35 Photoconductive decay in LCVD/PECVD low temperature grown GaN Zhou, Bing
 1997
 41 2 p. 279-281
3 p.
 artikel
36 Photoemission and core absorption studies of indium nitride Fukui, Kazutoshi
 1997
 41 2 p. 299-303
5 p.
 artikel
37 Photoluminescence study of silicon-doped GaN grown by MBE on GaAs substrates Orton, J.W.
 1997
 41 2 p. 219-222
4 p.
 artikel
38 Photolytic absorbate removal during the growth of aluminium nitride by remote microwave plasma chemical vapour deposition Butcher, K.S.A.
 1997
 41 2 p. 305-314
10 p.
 artikel
39 Preface 1997
 41 2 p. ix-
1 p.
 artikel
40 Properties of GaN epitaxial layer grown on (111) MgAl2O4 substrate Kuramata, Akito
 1997
 41 2 p. 251-254
4 p.
 artikel
41 Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance Kunzer, M.
 1997
 41 2 p. 189-193
5 p.
 artikel
42 Radiative recombination mechanisms in high brightness Nichia blue LEDs Osiński, Marek
 1997
 41 2 p. 155-157
3 p.
 artikel
43 Reactive ion etching of III–V nitrides Pearton, S.J.
 1997
 41 2 p. 159-163
5 p.
 artikel
44 Recessed gate GaN MODFETs Burm, Jinwook
 1997
 41 2 p. 247-250
4 p.
 artikel
45 Selective-area regrowth of GaN field emission tips Underwood, R.D.
 1997
 41 2 p. 243-245
3 p.
 artikel
46 Semi-empirical tight-binding calculation of the electronic structure of GaP1−x N x (x = 0.25, 0.5, 0.75) alloys Miyoshi, Seiro
 1997
 41 2 p. 267-269
3 p.
 artikel
47 Stacking mismatch boundaries in GaN: Implications for substrate selection Smith, D.J.
 1997
 41 2 p. 349-352
4 p.
 artikel
48 Stimulated emission from rectangular cross-sectional GaN optical waveguides by photo-pumping and stripe design of optical waveguides formed with a selectively grown GaInN GaN buried heterostructure Tanaka, T.
 1997
 41 2 p. 255-261
7 p.
 artikel
49 The excitonic bandgap of GaN: Dependence on substrate Monemar, B.
 1997
 41 2 p. 239-241
3 p.
 artikel
50 Theoretical estimation of threshold current of cubic GaInN/GaN/AlGaN quantum well lasers Nomura, Ichirou
 1997
 41 2 p. 283-286
4 p.
 artikel
51 XPS measurement of valence band discontinuity at GaP/GaN heterointerfaces Sato, Hisao
 1997
 41 2 p. 205-207
3 p.
 artikel
                             51 gevonden resultaten
 
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