|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 13 of 51 found articles
| Title: |
Formation and etching of thin nitride layers on GaAs using atomic nitrogen and hydrogen |
| Author: |
Makimoto, Toshiki Kobayashi, Naoki |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 41 (1997) nr. 2 pages 3 p. |
| Year: |
1997 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 13 of 51 found articles
| << previous | next >> |