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  A study on barrier height of AuAl x Ga1 − x N Schottky diodes in the range 0 ≤ x ≤ 0.20
 
 
Title: A study on barrier height of AuAl x Ga1 − x N Schottky diodes in the range 0 ≤ x ≤ 0.20
Author: Mohammad Rezaul Huque Khan,
Nakayama, Hisashi
Detchprohm, Theeradetch
Hiramatsu, Kazumasa
Sawaki, Nobuhiko
Appeared in: Solid-state electronics
Paging: Volume 41 (1997) nr. 2 pages 8 p.
Year: 1997
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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