| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A highly mismatched InxGa1−xAs/AlGaAs (0 ≦ x ≦ 0.5) pseudomorphic HEMT on GaAs substrate using an In x/2Ga1−x/2As buffer layer
|
Mizutani, Takashi
|
|
1997
|
41 |
10 |
p. 1469-1474
6 p.
|
artikel
|
| 2 |
Author index
|
|
|
1997
|
41 |
10 |
p. I-II
nvt p.
|
artikel
|
| 3 |
Characterization of fully fabricated PHEMTs using photoelectric techniques
|
Schuermeyer, Fritz
|
|
1997
|
41 |
10 |
p. 1529-1533
5 p.
|
artikel
|
| 4 |
Complementary GaAs (CGaAs™): New enhancements
|
Abrokwah, J.K.
|
|
1997
|
41 |
10 |
p. 1433-1439
7 p.
|
artikel
|
| 5 |
Current status of reliability of InGaP/GaAs HBTs
|
Ueda, O.
|
|
1997
|
41 |
10 |
p. 1605-1610
6 p.
|
artikel
|
| 6 |
Design rules for n-type SiGe hetero FETs
|
König, U.
|
|
1997
|
41 |
10 |
p. 1541-1547
7 p.
|
artikel
|
| 7 |
Development of double recessed AlInAs/GaInAs/InP HEMTs for millimeter wave power applications
|
Hur, Katerina Y.
|
|
1997
|
41 |
10 |
p. 1581-1585
5 p.
|
artikel
|
| 8 |
Double-doped power heterojunction FET for 1.5 V digital cellular applications
|
Iwata, Naotaka
|
|
1997
|
41 |
10 |
p. 1587-1590
4 p.
|
artikel
|
| 9 |
Electron irradiation during Schottky gate metal evaporation and its effect on the stability of InGaAs/AlGaAs HEMTs
|
Kimura, Tamotsu
|
|
1997
|
41 |
10 |
p. 1457-1461
5 p.
|
artikel
|
| 10 |
Fabrication and characterization of GaN FETs
|
Binari, S.C.
|
|
1997
|
41 |
10 |
p. 1549-1554
6 p.
|
artikel
|
| 11 |
Fabrication and electrical characterization of InP-based insulated gate power HEMTS using ultrathin Si interface control layer
|
Suzuki, S.
|
|
1997
|
41 |
10 |
p. 1641-1646
6 p.
|
artikel
|
| 12 |
Fabrication of p +-gate InAs-channel HEMT based on InP
|
Koizumi, Ryoji
|
|
1997
|
41 |
10 |
p. 1525-1527
3 p.
|
artikel
|
| 13 |
Gamma dose effect on low noise AlGaAs/InGaAs PHEMT at millimeter-wave frequency
|
Komaru, M.
|
|
1997
|
41 |
10 |
p. 1481-1484
4 p.
|
artikel
|
| 14 |
GaN based heterostructure for high power devices
|
Asif Khan, M.
|
|
1997
|
41 |
10 |
p. 1555-1559
5 p.
|
artikel
|
| 15 |
HBT devices and circuits for signal and data processing
|
Yu, R.
|
|
1997
|
41 |
10 |
p. 1419-1431
13 p.
|
artikel
|
| 16 |
HBT IC manufacturability and reliability
|
Hafizi, Madjid
|
|
1997
|
41 |
10 |
p. 1591-1598
8 p.
|
artikel
|
| 17 |
HBT power devices and circuits
|
Bayraktaroglu, Burhan
|
|
1997
|
41 |
10 |
p. 1657-1665
9 p.
|
artikel
|
| 18 |
HBTs in telecommunications
|
Sitch, J.
|
|
1997
|
41 |
10 |
p. 1397-1405
9 p.
|
artikel
|
| 19 |
Hemt circuits for signal/data processing
|
Berroth, M.
|
|
1997
|
41 |
10 |
p. 1407-1412
6 p.
|
artikel
|
| 20 |
High density and high mobility transport characteristics in gated undoped GaAsAl/xGa1−xAs heterostructures
|
Herfort, J.
|
|
1997
|
41 |
10 |
p. 1535-1540
6 p.
|
artikel
|
| 21 |
High f max AlGaAs/GaAs HBT with L-shaped base electrode and its application to 50 GHz amplifier
|
Yanagihara, Manabu
|
|
1997
|
41 |
10 |
p. 1615-1620
6 p.
|
artikel
|
| 22 |
High-performance SiSiGe HBTs SiGe-technology development in Esprit Project 8001 TIBIA: An overview
|
Terpstra, D.
|
|
1997
|
41 |
10 |
p. 1493-1502
10 p.
|
artikel
|
| 23 |
High power-added efficiency and low distortion GaAs power FET employing spike-gate structure
|
Furukawa, Hidetoshi
|
|
1997
|
41 |
10 |
p. 1599-1604
6 p.
|
artikel
|
| 24 |
High power AlGaN/GaN HEMTs for microwave applications
|
Wu, Y.-F.
|
|
1997
|
41 |
10 |
p. 1569-1574
6 p.
|
artikel
|
| 25 |
High power applications for GaN-based devices
|
Trew, R.J.
|
|
1997
|
41 |
10 |
p. 1561-1567
7 p.
|
artikel
|
| 26 |
High speed InGaP/GaAs HBTs with f max of 159 GHz
|
Oka, T.
|
|
1997
|
41 |
10 |
p. 1611-1614
4 p.
|
artikel
|
| 27 |
III–V heterostructure microelectronics for electronic and optoelectronic systems in Europe
|
Scavennec, A.
|
|
1997
|
41 |
10 |
p. 1389-1396
8 p.
|
artikel
|
| 28 |
Influence of rapid thermal annealing on modulation doped structures
|
Inoue, Daijiro
|
|
1997
|
41 |
10 |
p. 1475-1479
5 p.
|
artikel
|
| 29 |
InP-based DHBT with 90% power-added efficiency and 1 W output power at 2 GHZ
|
Liu, Takyiu
|
|
1997
|
41 |
10 |
p. 1681-1686
6 p.
|
artikel
|
| 30 |
InP-based millimeter-wave PIN diodes for switching and phase-shifting application
|
Pavlidis, Dimitris
|
|
1997
|
41 |
10 |
p. 1635-1639
5 p.
|
artikel
|
| 31 |
Inteface-controlled Schottky barriers on InP and related materials
|
Hasegawa, H.
|
|
1997
|
41 |
10 |
p. 1441-1450
10 p.
|
artikel
|
| 32 |
Investigations of electron-beam and optical induced damage in high mobility SiGe heterostructures
|
Paul, D.J.
|
|
1997
|
41 |
10 |
p. 1509-1513
5 p.
|
artikel
|
| 33 |
InzAl1−zAs/InyGa1−yAs lattice constant engineered HEMTs on GaAs
|
Docter, D.P.
|
|
1997
|
41 |
10 |
p. 1629-1634
6 p.
|
artikel
|
| 34 |
Manufacturability and applications of SiGe HBT technology
|
Sunderland, D.A.
|
|
1997
|
41 |
10 |
p. 1503-1507
5 p.
|
artikel
|
| 35 |
Manufacturability and reliability of InP HEMTs
|
Sonoda, T.
|
|
1997
|
41 |
10 |
p. 1621-1628
8 p.
|
artikel
|
| 36 |
0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers
|
Nihei, M.
|
|
1997
|
41 |
10 |
p. 1647-1650
4 p.
|
artikel
|
| 37 |
Millimeter-wave power HEMTs
|
Arai, Shigemitsu
|
|
1997
|
41 |
10 |
p. 1575-1579
5 p.
|
artikel
|
| 38 |
Optoelectronic system integration using InP-based HBTs for lightwave communications
|
Chandrasekhar, S.
|
|
1997
|
41 |
10 |
p. 1413-1417
5 p.
|
artikel
|
| 39 |
Preface
|
|
|
1997
|
41 |
10 |
p. vii-
1 p.
|
artikel
|
| 40 |
Reliability study on InAlAs/InGaAs HEMTs with an InP recess-etch stopper and refractory gate metal
|
Enoki, Takatomo
|
|
1997
|
41 |
10 |
p. 1651-1656
6 p.
|
artikel
|
| 41 |
Self-aligned emitter power HBT and self-aligned gate power HFET for low/unity supply voltage operation in PHS handsets
|
Ota, Yorito
|
|
1997
|
41 |
10 |
p. 1675-1679
5 p.
|
artikel
|
| 42 |
SiGe heterojunction bipolar transistors—The noise perspective
|
Schumacher, Hermann
|
|
1997
|
41 |
10 |
p. 1485-1492
8 p.
|
artikel
|
| 43 |
Small-signal response of interface states at passivated InGaAs surfaces from low frequencies up to microwave frequencies
|
Iizuka, K.
|
|
1997
|
41 |
10 |
p. 1463-1468
6 p.
|
artikel
|
| 44 |
Thermal management of microwave power heterojunction bipolar transistors
|
Bozada, C.
|
|
1997
|
41 |
10 |
p. 1667-1673
7 p.
|
artikel
|
| 45 |
Three-dimensional interconnect technology for ultra-compact MMICs
|
Hirano, Makoto
|
|
1997
|
41 |
10 |
p. 1451-1455
5 p.
|
artikel
|
| 46 |
Tunneling devices and applications in high functionality/speed digital circuits
|
Haddad, G.I.
|
|
1997
|
41 |
10 |
p. 1515-1524
10 p.
|
artikel
|
| 47 |
TWHM'96 committee members
|
|
|
1997
|
41 |
10 |
p. viii-
1 p.
|
artikel
|
Tijdschrift beschrijving