| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A comparison between plasma charging-damage and inductive-damage: Damage response to Fowler-Nordheim stress
|
Salah, A
|
|
1996
|
39 |
12 |
p. 1701-1707
7 p.
|
article
|
| 2 |
Analysis of non-uniform current and temperature distributions in the emitter finger of AlGaAs/GaAs heterojunction bipolar transistors
|
Zhou, W
|
|
1996
|
39 |
12 |
p. 1709-1721
13 p.
|
article
|
| 3 |
Analytical investigation of surface potential and related properties of metal/insulator/III–V semiconductor capacitors
|
Stengel, Franck
|
|
1996
|
39 |
12 |
p. 1783-1790
8 p.
|
article
|
| 4 |
Analytical modeling for the collector current in SOI gate-controlled hybrid transistor
|
Huang, Ru
|
|
1996
|
39 |
12 |
p. 1816-1818
3 p.
|
article
|
| 5 |
A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling
|
Klös, A
|
|
1996
|
39 |
12 |
p. 1761-1775
15 p.
|
article
|
| 6 |
A new lifetime characterization technique using drain current transients in SOI material
|
Ionescu, A.M
|
|
1996
|
39 |
12 |
p. 1753-1755
3 p.
|
article
|
| 7 |
A precise method to determine the stress current to be applied to electromigration test structures
|
Molina Torres, L.C
|
|
1996
|
39 |
12 |
p. 1805-1807
3 p.
|
article
|
| 8 |
C jc and the output conductance of advanced bipolar junction transistors under nonlocal impact ionization conditions
|
Datta, Krishanu
|
|
1996
|
39 |
12 |
p. 1819-1821
3 p.
|
article
|
| 9 |
Comparison between the relaxation time approximation and the Boltzmann collision operator for simulation of dissipative electron transport in resonant tunnelling diodes
|
García-García, J
|
|
1996
|
39 |
12 |
p. 1795-1804
10 p.
|
article
|
| 10 |
Design considerations of a MOS-bipolar Darlington structure: The vertical insulated base transistor (IBT)
|
Godignon, P
|
|
1996
|
39 |
12 |
p. 1777-1782
6 p.
|
article
|
| 11 |
Determination of AlGaAs/GaAs HEMT parasitic resistances
|
Christianson, K.A
|
|
1996
|
39 |
12 |
p. 1757-1760
4 p.
|
article
|
| 12 |
2-D simulation of kink-related sidegating effects in GaAs MESFETs
|
Usami, Kasuoki
|
|
1996
|
39 |
12 |
p. 1737-1745
9 p.
|
article
|
| 13 |
Effect of deposition temperature on electric conduction and microstructure of Au films
|
He, Lili
|
|
1996
|
39 |
12 |
p. 1811-1815
5 p.
|
article
|
| 14 |
Hot-carrier-induced degradation in ultra-thin-film fully-depleted SOI MOSFETs
|
Yu, Bin
|
|
1996
|
39 |
12 |
p. 1791-1794
4 p.
|
article
|
| 15 |
List of contents and author index volume 39, 1996
|
|
|
1996
|
39 |
12 |
p. iii-xxiv
nvt p.
|
article
|
| 16 |
Modeling multi-band effects of hot electron transport in silicon by self-consistent solution of the Boltzmann transport and Poisson equations
|
Singh, S.P
|
|
1996
|
39 |
12 |
p. 1695-1700
6 p.
|
article
|
| 17 |
Novel polycrystalline silicon thin film transistors prepared by deposition from Si2H6 and subsequent annealing by NH3 plasma
|
Lin, Hsiao-Yi
|
|
1996
|
39 |
12 |
p. 1731-1735
5 p.
|
article
|
| 18 |
On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)
|
Tsai, Jung-Hui
|
|
1996
|
39 |
12 |
p. 1723-1730
8 p.
|
article
|
| 19 |
Optimization of PECVD silicon oxynitride for silicon MIS devices with low interface state density
|
Rao, P.R.S
|
|
1996
|
39 |
12 |
p. 1808-1810
3 p.
|
article
|
| 20 |
Plasma damage effects in InAlN field effect transistors
|
Ren, F.
|
|
1996
|
39 |
12 |
p. 1747-1752
6 p.
|
article
|
Journal description