| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new design approach for MITATT and TUNNETT mode devices
|
Dash, G.N.
|
|
1995
|
38 |
7 |
p. 1381-1385
5 p.
|
artikel
|
| 2 |
A numerical study of the effect of base and collector structures on the performance of AlGaAs GaAs multi-finger HBTs
|
Kager, A.
|
|
1995
|
38 |
7 |
p. 1339-1346
8 p.
|
artikel
|
| 3 |
A relationship between interface trap density and transconductance in depletion-mode field effect transistors
|
Tabib-Azar, Massood
|
|
1995
|
38 |
7 |
p. 1395-1400
6 p.
|
artikel
|
| 4 |
A simple and accurate simulation technique for flash EEPROM writing and its reliability issue
|
Wen, Kuei-Shan
|
|
1995
|
38 |
7 |
p. 1373-1379
7 p.
|
artikel
|
| 5 |
Backgating effects in GaAs FETs with a channel-semi-insulating substrate boundary
|
Sengouga, N.
|
|
1995
|
38 |
7 |
p. 1413-1421
9 p.
|
artikel
|
| 6 |
Bipolar transistor vertical scaling framework
|
Castañer, Luis M.
|
|
1995
|
38 |
7 |
p. 1367-1371
5 p.
|
artikel
|
| 7 |
Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures
|
Reed, J.
|
|
1995
|
38 |
7 |
p. 1351-1357
7 p.
|
artikel
|
| 8 |
Characteristics of PdIn ohmic contacts to n-GaAs with a thin Ge layer
|
Fu, H.G.
|
|
1995
|
38 |
7 |
p. 1299-1304
6 p.
|
artikel
|
| 9 |
Determination of interface recombination velocities and carrier lifetimes in SOI materials by a contactless optical modulation technique
|
Chang, Yun-Shan
|
|
1995
|
38 |
7 |
p. 1359-1366
8 p.
|
artikel
|
| 10 |
Dynamic high-current stressing damage and post-stress relaxation in p-n-p silicon bipolar junction transistors
|
Jang, S.-L.
|
|
1995
|
38 |
7 |
p. 1387-1393
7 p.
|
artikel
|
| 11 |
Effect of spacer layer thickness on tunneling characteristics in asymmetric AlAs/GaAs/AlAs double barrier structures
|
Daniels-Race, T.
|
|
1995
|
38 |
7 |
p. 1347-1349
3 p.
|
artikel
|
| 12 |
Evolution of dislocation loops in silicon in an inert ambient—I
|
Liu, J.
|
|
1995
|
38 |
7 |
p. 1305-1312
8 p.
|
artikel
|
| 13 |
Evolution of dislocation loops in silicon in an inert ambient—II
|
Chaudhry, S.
|
|
1995
|
38 |
7 |
p. 1313-1319
7 p.
|
artikel
|
| 14 |
Implantation and redistribution of dopants and isolation species in GaN and related compounds
|
Wilson, R.G.
|
|
1995
|
38 |
7 |
p. 1329-1333
5 p.
|
artikel
|
| 15 |
Improved switch time of I2L at low power consumption by using a SiGe heterojunction bipolar transistor
|
Karlsteen, M.
|
|
1995
|
38 |
7 |
p. 1401-1407
7 p.
|
artikel
|
| 16 |
InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz
|
Wen-Jeng Ho,
|
|
1995
|
38 |
7 |
p. 1295-1298
4 p.
|
artikel
|
| 17 |
Ion beam shadowing effect in submicrometer large-angle-tilt implanted drain (LATID) MOSFETs
|
Hung-Sheng Chen,
|
|
1995
|
38 |
7 |
p. 1321-1323
3 p.
|
artikel
|
| 18 |
Luminescence properties of erbium in III–V compound semiconductors
|
Zavada, J.M.
|
|
1995
|
38 |
7 |
p. 1285-1293
9 p.
|
artikel
|
| 19 |
On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal conductivity
|
Bonani, Fabrizio
|
|
1995
|
38 |
7 |
p. 1409-1412
4 p.
|
artikel
|
| 20 |
Submonolayer and supermonolayer of InAs quantum wells grown on GaAs by molecular beam epitaxy
|
Okamoto, K.
|
|
1995
|
38 |
7 |
p. 1335-1338
4 p.
|
artikel
|
| 21 |
The superposition of transient low-level leakage currents in stressed silicon oxides
|
Scott, R.S.
|
|
1995
|
38 |
7 |
p. 1325-1328
4 p.
|
artikel
|
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