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                                       Details for article 10 of 21 found articles
 
 
  Dynamic high-current stressing damage and post-stress relaxation in p-n-p silicon bipolar junction transistors
 
 
Title: Dynamic high-current stressing damage and post-stress relaxation in p-n-p silicon bipolar junction transistors
Author: Jang, S.-L.
Liu, S.-S.
Tsai, C.-J.
Appeared in: Solid-state electronics
Paging: Volume 38 (1995) nr. 7 pages 7 p.
Year: 1995
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 10 of 21 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands