| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Active doping instability in n +-p silicon surface avalanche diodes
|
Manzini, S.
|
|
1995
|
38 |
2 |
p. 331-337
7 p.
|
artikel
|
| 2 |
AlGaInP orange light-emitting diodes grown on misoriented p-GaAs substrates
|
Lin, Jyh-Feng
|
|
1995
|
38 |
2 |
p. 305-308
4 p.
|
artikel
|
| 3 |
An accurate on-resistance model for low voltage VDMOS devices
|
Kim, Seong-Dong
|
|
1995
|
38 |
2 |
p. 345-350
6 p.
|
artikel
|
| 4 |
Analysis of turn-on transient in power bipolar-mode FET (BMFET)
|
Persiano, Giovanni Vito
|
|
1995
|
38 |
2 |
p. 503-508
6 p.
|
artikel
|
| 5 |
A new contactless S-polarized reflectance technique for determining the Si film and buried oxide thickness in silicon-on-insulator materials
|
Chang, Yun-Shan
|
|
1995
|
38 |
2 |
p. 297-304
8 p.
|
artikel
|
| 6 |
A survey of thermal-electric feedback coefficients in GaAs-based heterojunction bipolar transistors
|
Liu, William
|
|
1995
|
38 |
2 |
p. 407-411
5 p.
|
artikel
|
| 7 |
Asymmetric (Schottky-ohmic) MSM photodetector
|
Porges, M.
|
|
1995
|
38 |
2 |
p. 425-427
3 p.
|
artikel
|
| 8 |
A vertical submicron SiC thin film transistor
|
Hwang, J.D.
|
|
1995
|
38 |
2 |
p. 275-278
4 p.
|
artikel
|
| 9 |
Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
|
Polyakov, A.Y.
|
|
1995
|
38 |
2 |
p. 525-529
5 p.
|
artikel
|
| 10 |
Capacitance of resonant tunneling diodes with spacer layers
|
Wei, T.
|
|
1995
|
38 |
2 |
p. 465-469
5 p.
|
artikel
|
| 11 |
Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements
|
Gottwald, P.
|
|
1995
|
38 |
2 |
p. 413-417
5 p.
|
artikel
|
| 12 |
2D device-level simulation study on d.c. and transient behavior of a SiGe-base HBT with a graded germanium profile in an ECL buffer operating at 77 K
|
Kuo, J.B.
|
|
1995
|
38 |
2 |
p. 451-455
5 p.
|
artikel
|
| 13 |
Delay time analysis for short gate-length GaAs MESFETs
|
Nummila, K.
|
|
1995
|
38 |
2 |
p. 517-524
8 p.
|
artikel
|
| 14 |
Depletion-MIS-like InGaAs/GaAs delta-doped structures with high breakdown voltage and large gate voltage swing
|
Wu, C.L.
|
|
1995
|
38 |
2 |
p. 433-436
4 p.
|
artikel
|
| 15 |
Direct measurement of minority carrier diffusion length in planar devices
|
Boudjani, A.
|
|
1995
|
38 |
2 |
p. 471-475
5 p.
|
artikel
|
| 16 |
Double-heterojunction pseudomorphic AlGaAs/In0.15Ga0.85As HEMT and its short-channel effects
|
Wu, Chia-Song
|
|
1995
|
38 |
2 |
p. 377-381
5 p.
|
artikel
|
| 17 |
Effective base-collector time constants for calculating the maximum oscillation frequency of bipolar transistors
|
Vaidyanathan, Mani
|
|
1995
|
38 |
2 |
p. 509-516
8 p.
|
artikel
|
| 18 |
Heterojunction cathode injectors for D-band InP Gunn devices
|
Kamoua, R.
|
|
1995
|
38 |
2 |
p. 269-274
6 p.
|
artikel
|
| 19 |
High frequency characteristics of MESFETs
|
Afzali-Kushaa, Ali
|
|
1995
|
38 |
2 |
p. 401-406
6 p.
|
artikel
|
| 20 |
High temperature operation of GaAs based FETs
|
Wilson, C.D.
|
|
1995
|
38 |
2 |
p. 339-343
5 p.
|
artikel
|
| 21 |
High temperature performance of Ga 0.51In0.49P In0.2Ga0.8As pseudomorphic HEMTs with WSi x gates
|
Chan, Yi-Jen
|
|
1995
|
38 |
2 |
p. 457-459
3 p.
|
artikel
|
| 22 |
Impact of LDD structures on the operation of silicon MOSFETs at low temperature
|
Hafez, I.M.
|
|
1995
|
38 |
2 |
p. 419-424
6 p.
|
artikel
|
| 23 |
Improvement in the switch time of bipolar transistors with profiled base current drive
|
Lazarus, M.J.
|
|
1995
|
38 |
2 |
p. 351-355
5 p.
|
artikel
|
| 24 |
Interface state generation due to high-field stressing in MOS oxides
|
Patrikar, R.M.
|
|
1995
|
38 |
2 |
p. 477-480
4 p.
|
artikel
|
| 25 |
Inversion charge modeling of SiGe PMOS and approaches to increasing the hole density in the SiGe channel
|
Niu, G.F.
|
|
1995
|
38 |
2 |
p. 323-329
7 p.
|
artikel
|
| 26 |
Modelling of single barrier heterostructures including band bending and non-parabolicity effects of the band structure
|
Kirilov, M.
|
|
1995
|
38 |
2 |
p. 357-365
9 p.
|
artikel
|
| 27 |
Recystallization characteristics of polycrystalline silicon films amorphized by germanium ion implantation
|
Kang, Myeon-Koo
|
|
1995
|
38 |
2 |
p. 383-387
5 p.
|
artikel
|
| 28 |
Reduction of 1 f noise in polysilicon emitter bipolar transistors
|
Siabi-Shahrivar, N.
|
|
1995
|
38 |
2 |
p. 389-400
12 p.
|
artikel
|
| 29 |
Resistivity curves for subsurface diffused layers in silicon
|
Bulucea, Constantin
|
|
1995
|
38 |
2 |
p. 367-375
9 p.
|
artikel
|
| 30 |
Schottky diode properties of Au, InGaP (111) and (110) chemically etched surfaces
|
Ismail, A.
|
|
1995
|
38 |
2 |
p. 497-501
5 p.
|
artikel
|
| 31 |
Shot noise in double barrier quantum structures
|
Jahan, M.M.
|
|
1995
|
38 |
2 |
p. 429-432
4 p.
|
artikel
|
| 32 |
Spatio-temporal impact ionisation transients: A Lucky drift model study in GaAs
|
Wilson, S.P.
|
|
1995
|
38 |
2 |
p. 287-296
10 p.
|
artikel
|
| 33 |
The correlation of low frequency optical noise spectrum and electrical noise spectrum in a laser diode, with experimental results
|
Dai, Yisong
|
|
1995
|
38 |
2 |
p. 317-322
6 p.
|
artikel
|
| 34 |
The effect of fixed space charge on space-charge-limited current injection in impurity-band-conduction semiconductors
|
Martin, B.G.
|
|
1995
|
38 |
2 |
p. 443-449
7 p.
|
artikel
|
| 35 |
The effect of nonlinear coupling of reciprocal mobilities on the charge carrier distribution in semiconductor power devices
|
Reznik, D.
|
|
1995
|
38 |
2 |
p. 437-442
6 p.
|
artikel
|
| 36 |
The linear statistical d.c. model of GaAs MESFET using factor analysis
|
Dobrzanski, Lech
|
|
1995
|
38 |
2 |
p. 487-495
9 p.
|
artikel
|
| 37 |
Theoretical analysis of the two-junction monolithic cascade Hg 1−x Cd x Te GaAs solar cell
|
Djafari Rouhani, M.
|
|
1995
|
38 |
2 |
p. 531-532
2 p.
|
artikel
|
| 38 |
Theory and experiment of the temperature dependence of GaAlAs/GaAs HBTs characteristics for power amplifier applications
|
Bailbé, J.P.
|
|
1995
|
38 |
2 |
p. 279-286
8 p.
|
artikel
|
| 39 |
Trade-off between blocking gain and on-resistance in static induction transistor
|
Strollo, Antonio G.M.
|
|
1995
|
38 |
2 |
p. 309-315
7 p.
|
artikel
|
| 40 |
Transient simulation of EPROM writing characteristics, with a novel hot electron injection model
|
Huang, Chimoon
|
|
1995
|
38 |
2 |
p. 461-464
4 p.
|
artikel
|
| 41 |
Unified HBT base push-out and base-collector capacitance model
|
Davis, R.G.
|
|
1995
|
38 |
2 |
p. 481-485
5 p.
|
artikel
|
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