| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical and experimental characteristics of SiGe heterojunction bipolar transistors with thin α-Si:H emitters
|
Tang, Z.R
|
|
1995
|
38 |
10 |
p. 1829-1834
6 p.
|
artikel
|
| 2 |
An analytical back gate bias dependent subthreshold swing model for accumulation-mode p-channel SOI MOSFETs
|
Niu, Guo-Fu
|
|
1995
|
38 |
10 |
p. 1805-1810
6 p.
|
artikel
|
| 3 |
An empirical model for early resistance changes due to electromigration
|
Niehof, J
|
|
1995
|
38 |
10 |
p. 1817-1827
11 p.
|
artikel
|
| 4 |
A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
|
Leang, S.E
|
|
1995
|
38 |
10 |
p. 1791-1798
8 p.
|
artikel
|
| 5 |
A new method for determining the front and back interface trap densities of accumulation mode SOI MOSFETs at 77K
|
Martino, J.A
|
|
1995
|
38 |
10 |
p. 1799-1803
5 p.
|
artikel
|
| 6 |
Anomalous light emission from semiconductor laser material during pulsed anodization
|
Largent, C.C
|
|
1995
|
38 |
10 |
p. 1839-1841
3 p.
|
artikel
|
| 7 |
Calculation of the intrinsic carrier concentration and the minority-carrier concentration of silicon for heavy phosphorus doping with non-parabolic energy bands at low temperature
|
Xiao Zhixiong,
|
|
1995
|
38 |
10 |
p. 1837-1838
2 p.
|
artikel
|
| 8 |
Capture cross-section of hole traps in reoxidized nitrided oxide measured by irradiation
|
Mallik, A
|
|
1995
|
38 |
10 |
p. 1851-1853
3 p.
|
artikel
|
| 9 |
Comment on “Breakdown voltage of high-voltage GaAs Schottky diodes”
|
Horváth, Zs.J
|
|
1995
|
38 |
10 |
p. 1835-1836
2 p.
|
artikel
|
| 10 |
Current transport in AlGaAs GaAs heterojunction bipolar transistors operating between 300 and 500 K
|
Ho, C.S
|
|
1995
|
38 |
10 |
p. 1759-1763
5 p.
|
artikel
|
| 11 |
Deep-level trapping in ion-implanted InP JFETs
|
Kruppa, W
|
|
1995
|
38 |
10 |
p. 1735-1741
7 p.
|
artikel
|
| 12 |
Effect of Ge composition linear grading in the base on the Early voltage of Si/Si1−x Gex/Si HBTs
|
Zhang, W.R
|
|
1995
|
38 |
10 |
p. 1842-1844
3 p.
|
artikel
|
| 13 |
Effects of electron trapping on diffusion time-of-flight measurement in GaAs
|
Fardi, H.Z
|
|
1995
|
38 |
10 |
p. 1811-1816
6 p.
|
artikel
|
| 14 |
Electrical characteristics of a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor with zero potential spike at emitter-base heterojunction
|
Wu, Y.H
|
|
1995
|
38 |
10 |
p. 1755-1757
3 p.
|
artikel
|
| 15 |
Hydrogen and nitrogen plasma treatment effects on surface properties of GaSb and InGaAsSb
|
Polyakov, A.Y
|
|
1995
|
38 |
10 |
p. 1743-1745
3 p.
|
artikel
|
| 16 |
Interface states capacitance in AuPtTi nGaAs Schottky contacts—A modified Schottky Capacitance Spectroscopy method
|
Zamora, M
|
|
1995
|
38 |
10 |
p. 1771-1774
4 p.
|
artikel
|
| 17 |
Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor
|
Laih, Lih-Wen
|
|
1995
|
38 |
10 |
p. 1747-1753
7 p.
|
artikel
|
| 18 |
Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D model
|
Ellrodt, P
|
|
1995
|
38 |
10 |
p. 1775-1780
6 p.
|
artikel
|
| 19 |
New buried P +-grid polysilicon emitter bipolar power transistor
|
Kumar, M.Jagadesh
|
|
1995
|
38 |
10 |
p. 1854-1856
3 p.
|
artikel
|
| 20 |
Punchthrough path in double gate SOI MOSFETs
|
fu Niu, Guo
|
|
1995
|
38 |
10 |
p. 1848-1850
3 p.
|
artikel
|
| 21 |
Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs
|
Huang, Chao-Hsing
|
|
1995
|
38 |
10 |
p. 1765-1770
6 p.
|
artikel
|
| 22 |
Short-channel effect on the threshold voltage of accumulation-type, inversion-type and intrinsic-type SOI PMOS devices
|
Kuo, J.B
|
|
1995
|
38 |
10 |
p. 1845-1847
3 p.
|
artikel
|
| 23 |
Two-dimensional analytical models of the carrier distribution in the on-state of the IGBT
|
Feiler, W
|
|
1995
|
38 |
10 |
p. 1781-1790
10 p.
|
artikel
|
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